BSC076N06NS3GATMA1 - 60V 50A 7.6mΩ OptiMOS 3 N-MOSFET | Infineon
MPN: BSC076N06NS3GATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.45 | $1.45 |
| 10 | $1.28 | $12.80 |
| 100 | $1.05 | $105.00 |
| 500 | $0.92 | $460.00 |
| 1,000 | $0.78 | $780.00 |
| 5,000 | $0.65 | $3,250.00 |
Drop-in alternatives for BSC076N06NS3GATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC076N06NS3
✅ Drop-In📋 Reference alternative (not in catalog)
IPD034N06N3GATMA1
✅ Drop-In✓ In Stock
$0.51 / Unit
View Datasheet →BSC117N08NS5ATMA1
✅ Drop-In✓ In Stock
$0.46 / Unit
View Datasheet →BSZ900N20NS3GATMA1
✅ Drop-In✓ In Stock
$0.48 / Unit
View Datasheet →NTMFS5C612N
✅ Drop-In📋 Reference alternative (not in catalog)
SiRA12DP
✅ Drop-In📋 Reference alternative (not in catalog)
BSC076N06NS3GATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 3 |
| Technology | N-Channel Trench MOSFET |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at TC=25C | 50 A |
| On-Resistance RDS(on) max at VGS=10V | 7.6 mΩ |
| On-Resistance RDS(on) max at VGS=4.5V | 10.4 mΩ |
| Gate-Source Voltage (VGS) max | ±20 V |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 3.5 V |
| Power Dissipation (Ta) | 2.5 W |
| Power Dissipation (Tc) | 69 W |
| Operating Temperature Range | -55C to +150C |
| Package | PG-TDSON-8-5 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount |
| MSL Level | 1 (unlimited) |
| RoHS Compliance | Compliant |
| Halogen-Free | Yes (per Infineon product page) |
BSC076N06NS3GATMA1 Pin Configuration
| Pin 1 | G — Gate |
| Pin 2 | S — Source (low-inductance return) |
| Pin 3 | S — Source (low-inductance return) |
| Pin 4 | NC — Not connected (Source-sense, internally tied) |
| Pin 5 | D — Drain (exposed pad primary connection) |
| Pin 6 | S — Source |
| Pin 7 | S — Source |
| Pin 8 | S — Source |
Safe Operating Area (DC, TC=25C)
Typical Applications
BSC076N06NS3GATMA1 is suitable for 7 applications: 48V Synchronous Rectification in Telecom DC-DC, Hot-Swap and ORing in Distributed Power, BLDC Motor Drive in Industrial Automation, Battery Protection in 24V E-Mobility Systems, USB-C PD Sink Power Path Switch, Class-D Audio Amplifier Output Stage, Solar Micro-Inverter Low-Side Switch.
48V Synchronous Rectification in Telecom DC-DC
The BSC076N06NS3GATMA1 fits 48 V telecom and server bus synchronous rectification where efficiency above 96% is mandatory. Its 7.6 mΩ RDS(on) at VGS=10V keeps conduction loss under 1.9 W per device at 25 A, while the SuperSO8 footprint allows top-side cooling from a standard FR4 1-oz copper pour. The 60 V VDS rating provides comfortable margin above 48 V nominal plus transient spikes. Placed as the low-side switch in a half-bridge with a complementary 100 V controller, this Infineon part delivers faster switching than older planar MOSFETs and supports switching frequencies up to 500 kHz with proper gate-drive design.
Recommended
Hot-Swap and ORing in Distributed Power
For 12 V to 48 V hot-swap and ORing controllers in server backplanes, the BSC076N06NS3GATMA1 delivers the 50 A continuous current needed for high-current distribution rails. Its 7.6 mΩ on-resistance generates only 18 W dissipation at 50 A, manageable with the SuperSO8's 69 W case-rated dissipation. The 60 V VDS rating absorbs back-EMF from inductive cables during hot-plug events. Used as the main pass-MOSFET in ORing circuits, this part enables fast turn-off during reverse-current detection, protecting redundant power supplies from fault conditions in datacenter applications.
Recommended
BLDC Motor Drive in Industrial Automation
The BSC076N06NS3GATMA1 is well suited for three-phase BLDC motor drive stages in 24 V to 48 V industrial servo systems. Its 50 A continuous current supports motors up to ~2 kW per phase, while the 7.6 mΩ RDS(on) keeps inverter losses under 3% at full torque. The exposed pad package simplifies mounting to a single aluminum heatsink shared across all three half-bridges. Combined with a gate driver like the IR2110 or Infineon EiceDriver family, this MOSFET achieves switching frequencies above 50 kHz with clean edges and minimal ringing when PCB layout guidelines are followed.
Recommended
Battery Protection in 24V E-Mobility Systems
In 24 V and 36 V e-mobility platforms such as e-bikes, light EVs, and automated guided vehicles, the BSC076N06NS3GATMA1 acts as the main disconnect MOSFET in battery management systems. Its 7.6 mΩ RDS(on) at VGS=10V minimizes voltage drop across the pack during peak discharge, preserving usable battery capacity. The 60 V VDS rating tolerates inductive kickback from motor phases. With a low gate threshold around 2-3.5 V, the device can be driven directly from 3.3 V microcontrollers via a small gate charge pump, simplifying BMS design.
Recommended
USB-C PD Sink Power Path Switch
For USB-C Power Delivery sink applications up to 100 W (20 V / 5 A), the BSC076N06NS3GATMA1 serves as the VBUS load switch. Its 7.6 mΩ RDS(on) generates only ~1.9 W dissipation at 5 A, manageable on the SuperSO8's exposed thermal pad. The 60 V VDS rating provides significant margin over the 20 V USB-PD maximum. Combined with a USB-PD controller, this MOSFET implements an efficient load-path switch with true reverse-current blocking, replacing older P-MOSFET solutions with substantially lower conduction loss in modern laptop and tablet designs.
Recommended
Class-D Audio Amplifier Output Stage
In half-bridge Class-D audio amplifier output stages running from ±25 V or 50 V rails, the BSC076N06NS3GATMA1 provides low-loss switching at audio frequencies (20 Hz to 500 kHz PWM). Its 7.6 mΩ RDS(on) translates directly into higher amplifier efficiency above 92%, reducing heatsink requirements. The 60 V VDS rating safely accommodates the 50 V supply plus inductive overshoot. For a 200 W stereo amplifier, two of these MOSFETs per phase deliver clean audio output with thermal headroom for continuous full-power operation in compact consumer and pro-audio enclosures.
Recommended
Solar Micro-Inverter Low-Side Switch
For micro-inverter and solar optimizer applications operating from 30 V to 50 V PV panel voltages, the BSC076N06NS3GATMA1 functions as the low-side MOSFET in the primary-side full-bridge or push-pull converter. Its 60 V VDS rating handles open-circuit PV voltage at cold temperatures with margin, while the 7.6 mΩ RDS(on) keeps conversion efficiency above 97% in MPPT operation. The SuperSO8 package supports high-density PCB layouts required for compact micro-inverter enclosures mounted behind PV panels in residential and commercial solar installations.
Recommended
Recommended Products Summary
Engineering reference data for BSC076N06NS3GATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC076N06NS3 | IPD034N06N3GATMA1 | NTMFS5C612N | SiRA12DP |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | onsemi | Vishay Intertechnology |
| Package | PG-TDSON-8-5 (SuperSO8 5x6) | PG-TDSON-8-5 - same | PG-TDSON-8-5 - same | DFN 5x6 - equivalent footprint | PowerPAK SO-8 - equivalent footprint |
| VDS max | 60 V | 60 V | 60 V | 60 V | 30 V |
| Continuous ID at TC=25C | 50 A | 50 A | 100 A | 60 A | 60 A |
| RDS(on) max at VGS=10V | 7.6 mΩ | 7.6 mΩ | 3.4 mΩ | 6.2 mΩ | 5.9 mΩ |
| RDS(on) max at VGS=4.5V | 10.4 mΩ | 10.4 mΩ | 4.5 mΩ | 8.5 mΩ | [DATA_NEEDED] |
| Power Dissipation (Tc) | 69 W | 69 W | 156 W | 92 W | 69 W |
| Technology | OptiMOS 3 Trench | OptiMOS 3 Trench | OptiMOS 3 Trench | Shielded Gate Trench | TrenchFET Gen IV |
| Unit Price @ 1000 pcs (USD) | 0.78 | 0.78 | 1.15 | 0.92 | 0.85 |
Key Differentiators
- Industry-leading 7.6 mΩ RDS(on) in SuperSO8 at 60 V (vs NTMFS5C612N)
- Three voltage-tier upgrade path in same footprint (vs BSC117N08NS5ATMA1)
- Lower-cost 60 V same-family alternative available (vs BSC094N06LS5ATMA1)
Design Notes
Estimated: at ID=25 A continuous and RDS(on)=7.6 mΩ, conduction loss is approximately P=I²R=25²×0.0076≈4.75 W. The SuperSO8 package with the exposed pad properly soldered to at least 1 in² of 2-oz copper yields θJA around 50 K/W, keeping TJ rise below 240°C above ambient. For continuous operation above 30 A, mount the device to an external heatsink or use the lower-RDS(on) IPD034N06N3GATMA1 sibling. Always consult the datasheet's thermal derating curves for your specific PCB layout.
Minimize the high-current loop area between drain, source, and the DC-link decoupling capacitor. Source pins 2-3 and 6-8 should be connected to a single wide copper pour that ties directly to the gate-driver ground and the source-sense Kelvin connection (pin 4 when used). Keep gate-drive traces short and route them over a continuous ground plane to limit parasitic inductance below 5 nH. Use 4-oz copper on the drain tab connection if possible to maximize heat spreading.
Do not exceed VGS=±20 V even transiently - the gate oxide is thin for low threshold. Always include a 10 kΩ gate-source resistor when the gate is left floating to prevent inadvertent turn-on from dv/dt-induced Miller coupling. In half-bridge configurations, ensure proper dead-time insertion in the controller to prevent shoot-through. Verify that VDS stays below 80% of the 60 V maximum under all switching transients including diode reverse recovery.
The fast switching edges of this MOSFET (sub-10 ns trr body diode) help reduce switching loss but can generate significant EMI above 100 MHz. Place a small RC snubber (10 Ω + 1 nF) across the drain-source if radiated emissions fail CISPR 22/32 testing. Use a gate-drive resistor of 4.7-10 Ω to control dV/dt without excessively slowing switching. For telecom applications requiring EN 55022 Class B, consider adding a common-mode choke on the input rail.
Compliance Information
RoHS and halogen-free per Infineon OptiMOS 3 product family datasheet. The standard GATMA1 part is not AEC-Q100 qualified; for automotive applications choose an Infineon automotive-grade OptiMOS part number. Conflict minerals compliance per Infineon CMRT filings.
