BSZ900N20NS3GATMA1 - 200V N-Ch MOSFET 15.2A | Infineon OptiMOS 3
MPN: BSZ900N20NS3GATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.88 | $0.88 |
| 10 | $0.79 | $7.90 |
| 100 | $0.71 | $71.00 |
| 500 | $0.62 | $310.00 |
| 1,000 | $0.55 | $550.00 |
| 5,000 | $0.48 | $2,400.00 |
Drop-in alternatives for BSZ900N20NS3GATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSZ900N20NS3G
✅ Drop-In📋 Reference alternative (not in catalog)
BSZ900N20NS3GATMA1 Maximum Ratings & Electrical Characteristics
| Part Number | BSZ900N20NS3GATMA1 |
| Manufacturer | Infineon Technologies |
| Technology | OptiMOS 3 (N-Channel Trench MOSFET) |
| Drain-Source Voltage (VDS) | 200 V |
| Continuous Drain Current (ID, Tc=25C) | 15.2 A |
| Static Drain-Source On-Resistance (RDS(on) max @ VGS=10V) | 90 mΩ |
| Typical RDS(on) @ VGS=10V | 77 mΩ |
| Gate-Source Voltage (VGS) | ±20 V |
| Gate Threshold Voltage (VGS(th) typ) | 3.5 V |
| Power Dissipation (PD, Tc=25C) | 62.5 W |
| Operating Junction Temperature | -55C to +150C |
| Package | PG-TSDSON-8 (TDSON-8 FL) |
| Mounting Type | Surface Mount |
| MSL Level | 1 (unlimited) |
| RoHS Status | Compliant |
| Lead-Free / Halogen-Free | Yes / Yes |
| ESD Protection | Yes (integrated) |
| Avalanche Energy Rated | Yes (EAS) |
BSZ900N20NS3GATMA1 Pin Configuration
| Pin 1 | Source — Source connection (low-side reference) |
| Pin 2 | Source — Source connection |
| Pin 3 | Source — Source connection |
| Pin 4 | Source — Source connection |
| Pin 5 | Source / Thermal Pad — Source and exposed thermal pad (drain-tab on bottom is drain) |
| Pin 6 | Gate — Gate drive input |
| Pin 7 | Drain — Drain connection (also accessible via top tab) |
| Pin 8 | Source — Source connection |
Safe Operating Area (BSZ900N20NS3GATMA1, DC, Tc=25C)
Typical Applications
BSZ900N20NS3GATMA1 is suitable for 6 applications: 48V Synchronous Rectification, Isolated DC-DC Converters, Uninterruptible Power Supplies (UPS), DC Motor Drive Inverters, Solar Micro-Inverters, Telecom Hot-Swap / ORing Controllers.
48V Synchronous Rectification
The BSZ900N20NS3GATMA1 is optimized for the low-side synchronous rectifier position in 48V bus converters. Its 77 mΩ typical RDS(on) at VGS = 10V directly reduces conduction loss in continuous-conduction mode (CCM), while the 200V VDS rating provides the 80-100V transient headroom demanded by telecom load-dump specifications. Per Infineon's datasheet, the part's low Qrr also makes it suitable for use as a freewheeling rectifier in zero-voltage-switching (ZVS) full-bridge topologies operating at 100-300 kHz, where reverse-recovery charge would otherwise dominate switching loss. Place the part on the secondary-side synchronous-rectifier footprint with a 1 sq inch exposed-pad copper pour, and drive the gate from a 10V UCC24612 or similar synchronous-rectifier controller.
Recommended
Isolated DC-DC Converters
In isolated DC-DC converters such as full-bridge, half-bridge, and active-clamp forward topologies, the BSZ900N20NS3GATMA1 serves as the primary-side switch when fed from a 48V-72V bus. Its 200V rating comfortably exceeds 72V nominal plus leakage-inductance spike overshoot, and the 15.2A continuous ID handles the primary-side RMS current of a 600W converter at 100 kHz. Per Infineon's datasheet, the part's avalanche-energy rating (EAS) ensures survival during load-step-induced duty-cycle excursions. The TDSON-8 exposed pad simplifies thermal management on the primary-side, where heatsinking is often impractical. Pair with a digital isolator such as the UCC21540 in the gate-drive path.
Recommended
Uninterruptible Power Supplies (UPS)
In online UPS inverter stages, the BSZ900N20NS3GATMA1 functions as a low-frequency (typically 20 kHz) bridge-leg switch converting rectified 48V battery bus to 120V/230V AC output. The 200V VDS rating handles the DC-bus plus transformer-leakage overshoot, and the 77 mΩ RDS(on) limits conduction loss in continuous-operation UPS systems where fans and thermal management are already constrained. Per Infineon's OptiMOS 3 datasheet, the avalanche-rugged design tolerates the high di/dt events seen during inverter short-circuit protection, making the part suitable for the demanding reliability requirements of mission-critical UPS installations. Place two BSZ900N20NS3GATMA1 in parallel per phase for higher-current 5 kVA UPS designs.
Recommended
DC Motor Drive Inverters
The BSZ900N20NS3GATMA1 is well-matched to low-voltage DC motor drive inverters operating from 48V-96V battery packs (forklifts, e-bikes, mobility scooters). The 200V VDS provides 2x headroom above typical 96V battery overcharge conditions, while the 15.2A continuous ID supports motors up to approximately 1.5 kW without parallel devices. Per Infineon's datasheet, the OptiMOS 3 cell structure offers low body-diode forward voltage, reducing dead-time loss in trapezoidal BLDC commutation. The TDSON-8 exposed pad enables direct PCB-mount cooling in motor-controller enclosures. Drive the gates with a 3-phase bridge-driver such as the IRF7309TRPBF for complete H-bridge inverter reference designs.
Recommended
Solar Micro-Inverters
In grid-tied solar micro-inverters operating from 40V-80V PV panel strings, the BSZ900N20NS3GATMA1 serves as the primary-side switch in a 2-stage topology (boost + full-bridge). The 200V VDS rating tolerates the open-circuit PV voltage at cold-temperature extremes plus resonant-ring overshoot, while the 77 mΩ RDS(on) achieves >96% conversion efficiency per Infineon's datasheet characterizations. The TDSON-8 package's small footprint suits the high-density mechanical constraints of micro-inverter enclosures. Use the part in conjunction with an interleaved PFC stage for EN50530-compliant grid-tie performance and add a heatsink if the design operates continuously at >8A output.
Recommended
Telecom Hot-Swap / ORing Controllers
Although primarily a switching MOSFET, the BSZ900N20NS3GATMA1's 77 mΩ RDS(on) and 200V VDS make it suitable for high-side ORing switches in 48V telecom rectifier-redundant power systems. Per Infineon's OptiMOS 3 datasheet, the part's fast body-diode and low Qrr minimize reverse-current transients during source-switchover events. The 15.2A continuous ID handles typical 48V/600W rectifier outputs, and the TDSON-8 footprint integrates cleanly onto the ORing-controller daughtercard. Gate-drive via a dedicated ORing controller such as the LTC4359 ensures fast turn-off during fault conditions and prevents reverse-current-induced MOSFET failure.
Recommended
Recommended Products Summary
Engineering reference data for BSZ900N20NS3GATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSZ900N20NS3G | IPD320N20N3GATMA1 |
|---|---|---|---|
| Package | PG-TSDSON-8 (TDSON-8 FL) | PG-TSDSON-8 (TDSON-8 FL) - same | PG-TO252-3 (DPAK) - different |
| Brand | Infineon Technologies | Infineon Technologies - same | Infineon Technologies - same |
| VDS (Drain-Source Voltage) | 200 V | 200 V | 200 V |
| Continuous Drain Current (ID, Tc=25C) | 15.2 A | 15.2 A | 34 A |
| RDS(on) max @ VGS=10V | 90 mΩ | 90 mΩ | 32 mΩ |
| Power Dissipation (Tc=25C) | 62.5 W | 62.5 W | 136 W |
| Technology Family | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 |
| Unit Price (qty 1, USD) | $0.88 | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Lowest RDS(on) in TDSON-8 200V class (vs IPD320N20N3GATMA1)
- OptiMOS 3 trench technology for low FOM (vs Older planar 200V MOSFETs)
- Same-brand pin-compatible ordering flexibility (vs Cross-brand equivalents)
Design Notes
Estimated: at PD = 4 W (e.g., 15 A × 0.27 V across the FET), the BSZ900N20NS3GATMA1 in TDSON-8 with a 1 sq inch 1 oz copper pad typically achieves RthJA ≈ 50 C/W, yielding a junction temperature rise of roughly 200C above ambient. To stay below the 150C maximum junction rating at 25C ambient, limit steady-state dissipation to approximately 2.5 W, or use larger copper area / forced airflow. A small clip-on heatsink (e.g., Aavid 577002B00000G) reduces RthJA to roughly 25 C/W and doubles continuous dissipation capacity.
Minimize the high-current loop area between the drain tab, transformer secondary, and source pins to reduce parasitic inductance and switching-node ringing. Place the gate-drive bypass capacitor (≥1 µF ceramic) within 5 mm of the gate pin (pin 6), and route the gate trace over a continuous ground plane to avoid capacitive coupling to the drain tab. Per Infineon's TDSON-8 application notes, the source pins (1-4, 8) should all be soldered and stitched to a single ground pour to maximize heat extraction from the bottom-exposed drain pad.
Do not exceed VGS = ±20 V (per Infineon absolute maximum ratings); gate-overshoot from a poorly damped gate-drive loop can punch through the gate oxide. Ensure the synchronous-rectifier dead-time is long enough to prevent cross-conduction but short enough to limit body-diode conduction loss — for the BSZ900N20NS3GATMA1's body diode, target dead times of 50-200 ns depending on switching frequency. Finally, verify that the avalanche-energy (EAS) rating is not exceeded during output-voltage OVP events by adding a TVS clamp on the secondary winding.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified — choose an automotive-grade part (e.g., IAUC100N10S5N040ATMA1 family) for vehicle applications. Halogen-free per Infineon OptiMOS 3 family datasheet.
