BTS3035TFATMA1 vs BTS3060TFATMA1 Comparison

Detailed side-by-side comparison of BTS3035TFATMA1 by Infineon and BTS3060TFATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BTS3035TFATMA1 BTS3060TFATMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Product Type Low-Side Power Switch Smart Low-Side Power Switch
Technology N-Channel MOSFET —
Number of Channels 1 1
Input Type CMOS Logic Level Logic-level gate input (3.3V / 5V compatible)
Continuous Drain Current 5 A —
On-Resistance (RDS(on)) 30 mOhm (typical) —
Drain-Source Voltage (VDS) Max 40 V —
Operating Voltage Range 12 V nominal (load-dump tolerant to 40 V) —
Fault Protection Over-current, Short-circuit, Over-temperature, ESD —
Status Feedback Yes (open-drain diagnostic output) —
Reverse Battery Protection Integrated —
Operating Temperature Range -40C to +150C (junction) -40°C to +150°C (junction)
Package PG-TO252-3-313 (DPAK) PG-TO252-3 (DPAK), 3 pins (2+Tab)
Mounting Type Surface Mount Surface Mount
MSL Level [DATA_NEEDED: MSL moisture sensitivity level] —
RoHS Status Compliant Compliant
Automotive Grade AEC-Q100 qualified —
Manufacturer Family — HITFET
On-Resistance (RDS(on) typ) — 50 mΩ at 25°C
Maximum Continuous Load Current — 3 A
Maximum Load Supply Voltage — 42 V
Transistor Type — N-Channel Vertical Power MOSFET (monolithically integrated)
Switch Configuration — Low-Side, 1:1
Diagnostic Output — Status pin (open-drain, requires pull-up)
Embedded Protection — Overcurrent, Overtemperature, Overvoltage, Open-load detection
Automotive Qualification — AEC-Q100 qualified
Packaging — Tape & Reel (TF suffix)

Datasheets & Resources

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