BTS3035TFATMA1 vs BTS3060TFATMA1 Vergleich

Detaillierter Direktvergleich von BTS3035TFATMA1 von Infineon und BTS3060TFATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter BTS3035TFATMA1 BTS3060TFATMA1
Marke Infineon Infineon
Kategorie Power MOSFET Drivers Power MOSFET Drivers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $0,61 $0,65
Product Type Low-Side Power Switch Smart Low-Side Power Switch
Technology N-Channel MOSFET —
Number of Channels 1 1
Input Type CMOS Logic Level Logic-level gate input (3.3V / 5V compatible)
Continuous Drain Current 5 A —
On-Resistance (RDS(on)) 30 mOhm (typical) —
Drain-Source Voltage (VDS) Max 40 V —
Operating Voltage Range 12 V nominal (load-dump tolerant to 40 V) —
Fault Protection Over-current, Short-circuit, Over-temperature, ESD —
Status Feedback Yes (open-drain diagnostic output) —
Reverse Battery Protection Integrated —
Betriebstemperaturbereich -40C to +150C (junction) -40°C to +150°C (junction)
Gehäuse PG-TO252-3-313 (DPAK) PG-TO252-3 (DPAK), 3 pins (2+Tab)
Montageart Surface Mount Surface Mount
MSL-Level [DATA_NEEDED: MSL moisture sensitivity level] —
RoHS-Status Compliant Compliant
Automotive Grade AEC-Q100 qualified —
Manufacturer Family — HITFET
On-Resistance (RDS(on) typ) — 50 mΩ at 25°C
Maximum Continuous Load Current — 3 A
Maximum Load Supply Voltage — 42 V
Transistortyp — N-Channel Vertical Power MOSFET (monolithically integrated)
Switch Configuration — Low-Side, 1:1
Diagnostic Output — Status pin (open-drain, requires pull-up)
Embedded Protection — Overcurrent, Overtemperature, Overvoltage, Open-load detection
Automotive Qualification — AEC-Q100 qualified
Packaging — Tape & Reel (TF suffix)

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