BTS3110NHUMA1 vs BTS500801TEAAUMA1 Comparison

Detailed side-by-side comparison of BTS3110NHUMA1 by Infineon and BTS500801TEAAUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BTS3110NHUMA1 BTS500801TEAAUMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Product Type Smart Low-Side Power Switch —
Family Classic HITFET —
Number of Channels 1 1
Switch Type N-Channel (1:1) —
Maximum Drain-to-Source Voltage (VDS max) 42 V —
Continuous Drain Current 1.4 A —
On-Resistance (RDS(on) typ) 200 mOhm —
Input Logic Compatibility TTL / CMOS (3.3 V and 5 V) —
On-State Input Voltage (VIH) [DATA_NEEDED: VIH value] —
Off-State Input Voltage (VIL) [DATA_NEEDED: VIL value] —
Status Flag Output Open-drain diagnostic output —
Protection Features ESD, thermal shutdown, over-load current limit —
Operating Temperature Range -40 C to +150 C [DATA_NEEDED: operating temperature range]
Package PG-SOT223-4 (SOT-223-4) PG-TO252-5-11 (DPAK-5, 4+Tab)
Mounting Type Surface Mount Surface Mount
MSL Level [DATA_NEEDED: MSL level] —
RoHS Status Compliant Compliant
Automotive Qualified Yes - 12 V automotive applications Yes (AEC-Q100 target application)
Product Family — Classic PROFET (smart high-side switch)
Topology — 1:1 N-Channel high-side
Nominal Supply Voltage — 12 V
Load Supply Voltage Range — 4.5 V to 28 V
Continuous Load Current — 10 A
On-State Resistance (RDS(on)) — 10 milliohms (typical)
Output Configuration — High-side
Fault Protection — Current limiting, over-temperature, over-voltage, reverse battery, ground loss, ESD
Diagnostic Output — Current sense (IS pin)
Packaging — Tape & Reel
Power Transistor Technology — N-channel vertical power MOSFET with charge pump

Datasheets & Resources

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