BTS3110NHUMA1 vs BTS500801TEAAUMA1 Comparación
Comparación detallada lado a lado de BTS3110NHUMA1 por Infineon y BTS500801TEAAUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BTS500801TEAAUMA1 - 10A Smart High-Side Switch | Infineon PROFET
BTS500801TEAAUMA1 ✓ ActivoComparación de especificaciones
| Parámetro | BTS3110NHUMA1 | BTS500801TEAAUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,82 | $2,74 |
| Product Type | Smart Low-Side Power Switch | — |
| Family | Classic HITFET | — |
| Number of Channels | 1 | 1 |
| Switch Type | N-Channel (1:1) | — |
| Maximum Drain-to-Source Voltage (VDS max) | 42 V | — |
| Continuous Drain Current | 1.4 A | — |
| On-Resistance (RDS(on) typ) | 200 mOhm | — |
| Input Logic Compatibility | TTL / CMOS (3.3 V and 5 V) | — |
| On-State Input Voltage (VIH) | [DATA_NEEDED: VIH value] | — |
| Off-State Input Voltage (VIL) | [DATA_NEEDED: VIL value] | — |
| Status Flag Output | Open-drain diagnostic output | — |
| Protection Features | ESD, thermal shutdown, over-load current limit | — |
| Rango de temperatura de funcionamiento | -40 C to +150 C | [DATA_NEEDED: operating temperature range] |
| Encapsulado | PG-SOT223-4 (SOT-223-4) | PG-TO252-5-11 (DPAK-5, 4+Tab) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | [DATA_NEEDED: MSL level] | — |
| Estado RoHS | Compliant | Compliant |
| Automotive Qualified | Yes - 12 V automotive applications | Yes (AEC-Q100 target application) |
| Product Family | — | Classic PROFET (smart high-side switch) |
| Topología | — | 1:1 N-Channel high-side |
| Nominal Supply Voltage | — | 12 V |
| Load Supply Voltage Range | — | 4.5 V to 28 V |
| Continuous Load Current | — | 10 A |
| On-State Resistance (RDS(on)) | — | 10 milliohms (typical) |
| Configuración de salida | — | High-side |
| Fault Protection | — | Current limiting, over-temperature, over-voltage, reverse battery, ground loss, ESD |
| Diagnostic Output | — | Current sense (IS pin) |
| Packaging | — | Tape & Reel |
| Power Transistor Technology | — | N-channel vertical power MOSFET with charge pump |