BTS3110NHUMA1 vs BTS500801TEAAUMA1 비교

다음의 상세 나란히 비교: BTS3110NHUMA1 제조: Infineon 및 BTS500801TEAAUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BTS3110NHUMA1 BTS500801TEAAUMA1
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.82 $2.74
Product Type Smart Low-Side Power Switch —
Family Classic HITFET —
Number of Channels 1 1
Switch Type N-Channel (1:1) —
Maximum Drain-to-Source Voltage (VDS max) 42 V —
Continuous Drain Current 1.4 A —
On-Resistance (RDS(on) typ) 200 mOhm —
Input Logic Compatibility TTL / CMOS (3.3 V and 5 V) —
On-State Input Voltage (VIH) [DATA_NEEDED: VIH value] —
Off-State Input Voltage (VIL) [DATA_NEEDED: VIL value] —
Status Flag Output Open-drain diagnostic output —
Protection Features ESD, thermal shutdown, over-load current limit —
동작 온도 범위 -40 C to +150 C [DATA_NEEDED: operating temperature range]
패키지 PG-SOT223-4 (SOT-223-4) PG-TO252-5-11 (DPAK-5, 4+Tab)
실장 유형 Surface Mount Surface Mount
MSL 레벨 [DATA_NEEDED: MSL level] —
RoHS 상태 Compliant Compliant
Automotive Qualified Yes - 12 V automotive applications Yes (AEC-Q100 target application)
Product Family — Classic PROFET (smart high-side switch)
토폴로지 — 1:1 N-Channel high-side
Nominal Supply Voltage — 12 V
Load Supply Voltage Range — 4.5 V to 28 V
Continuous Load Current — 10 A
On-State Resistance (RDS(on)) — 10 milliohms (typical)
출력 구성 — High-side
Fault Protection — Current limiting, over-temperature, over-voltage, reverse battery, ground loss, ESD
Diagnostic Output — Current sense (IS pin)
Packaging — Tape & Reel
Power Transistor Technology — N-channel vertical power MOSFET with charge pump

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