CGD65A130S2 vs CGD65B130S2 Comparison
Detailed side-by-side comparison of CGD65A130S2 by Cambridge GaN Devices and CGD65B130S2 by Cambridge GaN Devices. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Cambridge GaN Devices
CGD65A130S2 - 650V 130mΩ GaN HEMT | Cambridge GaN Devices
CGD65A130S2 ✓ ActiveCambridge GaN Devices
CGD65B130S2 - 650V 130mΩ GaN HEMT | Cambridge GaN Devices
CGD65B130S2 ✓ ActiveSpecification Comparison
| Parameter | CGD65A130S2 | CGD65B130S2 |
|---|---|---|
| Brand | Cambridge GaN Devices | Cambridge GaN Devices |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.65 | $2.10 |
| Manufacturer | Cambridge GaN Devices | Cambridge GaN Devices |
| Technology | GaN-on-Si HEMT (enhancement-mode, ICeGaN™ gate) | — |
| Drain-Source Voltage (VDS, max) | 650 V | — |
| On-State Resistance (RDS(on)) | 130 mΩ (typ) | — |
| Continuous Drain Current (ID) | [DATA_NEEDED: continuous ID at 25°C and 100°C] | 12 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM rating] | — |
| Gate Charge (Qg, total) | [DATA_NEEDED: Qg typical value] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss value at VDS=400V] | [DATA_NEEDED: output capacitance] |
| Reverse Recovery Charge (Qrr) | 0 nC (GaN - negligible) | 0 nC (zero) |
| Gate-Source Voltage Rating | ±20 V (ICeGaN robust gate; see datasheet) | — |
| Operating Junction Temperature | -40°C to +150°C | — |
| Package | DFN-16 (8 × 8 mm) with exposed pad | 8-DFN 5x6 mm with exposed thermal pad |
| Mounting Type | Surface Mount | Surface Mount |
| Integrated Features | Current sense, Miller clamp (NL³), ICeGaN gate | — |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | MSL 1 (per JEDEC J-STD-020) |
| Transistor Type | — | GaN HEMT (enhancement mode, N-channel) |
| Drain-Source Voltage (VDS) | — | 650 V |
| On-Resistance (RDS(on)) | — | 130 mΩ (typical) |
| Gate Technology | — | ICeGaN™ (standard-driver compatible) |
| Operating Temperature | — | -55 °C to +150 °C (junction) |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg total gate charge at VGS=10V] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: input capacitance] |
| Rise Time / Fall Time | — | Sub-nanosecond (per datasheet typical application) |
| Substrate Technology | — | GaN-on-silicon |