CGD65A130S2 vs CGD65B130S2 Comparaison
Comparaison détaillée côte à côte de CGD65A130S2 par Cambridge GaN Devices et CGD65B130S2 par Cambridge GaN Devices. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | CGD65A130S2 | CGD65B130S2 |
|---|---|---|
| Marque | Cambridge GaN Devices | Cambridge GaN Devices |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $4,65 | $2,10 |
| Manufacturer | Cambridge GaN Devices | Cambridge GaN Devices |
| Technology | GaN-on-Si HEMT (enhancement-mode, ICeGaN™ gate) | — |
| Drain-Source Voltage (VDS, max) | 650 V | — |
| On-State Resistance (RDS(on)) | 130 mΩ (typ) | — |
| Continuous Drain Current (ID) | [DATA_NEEDED: continuous ID at 25°C and 100°C] | 12 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM rating] | — |
| Gate Charge (Qg, total) | [DATA_NEEDED: Qg typical value] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss value at VDS=400V] | [DATA_NEEDED: output capacitance] |
| Reverse Recovery Charge (Qrr) | 0 nC (GaN - negligible) | 0 nC (zero) |
| Gate-Source Voltage Rating | ±20 V (ICeGaN robust gate; see datasheet) | — |
| Température de jonction en fonctionnement | -40°C to +150°C | — |
| Boîtier | DFN-16 (8 × 8 mm) with exposed pad | 8-DFN 5x6 mm with exposed thermal pad |
| Type de montage | Surface Mount | Surface Mount |
| Integrated Features | Current sense, Miller clamp (NL³), ICeGaN gate | — |
| Statut RoHS | Compliant | Compliant |
| Niveau MSL | [DATA_NEEDED: MSL rating] | MSL 1 (per JEDEC J-STD-020) |
| Type de transistor | — | GaN HEMT (enhancement mode, N-channel) |
| Drain-Source Voltage (VDS) | — | 650 V |
| On-Resistance (RDS(on)) | — | 130 mΩ (typical) |
| Gate Technology | — | ICeGaN™ (standard-driver compatible) |
| Température de fonctionnement | — | -55 °C to +150 °C (junction) |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg total gate charge at VGS=10V] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: input capacitance] |
| Rise Time / Fall Time | — | Sub-nanosecond (per datasheet typical application) |
| Substrate Technology | — | GaN-on-silicon |