CGD65A130S2 vs CGD65B130S2 对比
详细并排对比 CGD65A130S2 出自 Cambridge GaN Devices 和 CGD65B130S2 出自 Cambridge GaN Devices。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | CGD65A130S2 | CGD65B130S2 |
|---|---|---|
| 品牌 | Cambridge GaN Devices | Cambridge GaN Devices |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $4.65 | $2.10 |
| Manufacturer | Cambridge GaN Devices | Cambridge GaN Devices |
| Technology | GaN-on-Si HEMT (enhancement-mode, ICeGaN™ gate) | — |
| Drain-Source Voltage (VDS, max) | 650 V | — |
| On-State Resistance (RDS(on)) | 130 mΩ (typ) | — |
| Continuous Drain Current (ID) | [DATA_NEEDED: continuous ID at 25°C and 100°C] | 12 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM rating] | — |
| Gate Charge (Qg, total) | [DATA_NEEDED: Qg typical value] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss value at VDS=400V] | [DATA_NEEDED: output capacitance] |
| Reverse Recovery Charge (Qrr) | 0 nC (GaN - negligible) | 0 nC (zero) |
| Gate-Source Voltage Rating | ±20 V (ICeGaN robust gate; see datasheet) | — |
| 工作结温 | -40°C to +150°C | — |
| 封装 | DFN-16 (8 × 8 mm) with exposed pad | 8-DFN 5x6 mm with exposed thermal pad |
| 安装类型 | Surface Mount | Surface Mount |
| Integrated Features | Current sense, Miller clamp (NL³), ICeGaN gate | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | [DATA_NEEDED: MSL rating] | MSL 1 (per JEDEC J-STD-020) |
| 晶体管类型 | — | GaN HEMT (enhancement mode, N-channel) |
| Drain-Source Voltage (VDS) | — | 650 V |
| On-Resistance (RDS(on)) | — | 130 mΩ (typical) |
| Gate Technology | — | ICeGaN™ (standard-driver compatible) |
| 工作温度 | — | -55 °C to +150 °C (junction) |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg total gate charge at VGS=10V] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: input capacitance] |
| Rise Time / Fall Time | — | Sub-nanosecond (per datasheet typical application) |
| Substrate Technology | — | GaN-on-silicon |