EP2C8T144C6N vs EP2C8T144C7 Comparison
Detailed side-by-side comparison of EP2C8T144C6N by Intel and EP2C8T144C7 by Intel. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | EP2C8T144C6N | EP2C8T144C7 |
|---|---|---|
| Brand | Intel | Intel |
| Category | FPGA & CPLD | FPGA & CPLD |
| Lifecycle Status | Active | Nrnd |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $14.20 | $28.75 |
| Family | Cyclone II | Cyclone II |
| Logic Elements | 8,256 | β |
| Total RAM Bits | 165,888 | 165,888 |
| Number of LABs/CLBs | [DATA_NEEDED: LAB count] | β |
| Number of Logic Elements / Cells | 8,256 | β |
| Total Memory Bits | 165,888 | β |
| Number of I/O | 85 | β |
| Number of Multipliers (18x18) | [DATA_NEEDED: 18x18 multiplier count] | β |
| Number of PLLs | [DATA_NEEDED: PLL count] | β |
| Voltage - Supply | 1.15 V to 1.25 V (core) | β |
| Operating Temperature | 0C to +85C (commercial) | 0C to +85C (Commercial, 'C' speed grade) |
| Package / Case | 144-LQFP (TQFP) | β |
| Supplier Device Package | 144-TQFP (20x20 mm) | β |
| Mounting Type | Surface Mount | β |
| Process Technology | 90 nm CMOS SRAM | 90 nm CMOS, low-k dielectric |
| Configuration Method | SRAM - volatile (EPCS/JTAG required) | β |
| RoHS Status | [DATA_NEEDED: RoHS compliance status] | Contains lead / RoHS non-compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | β |
| Logic Elements (LE) | β | 8,256 |
| Logic Array Blocks (LAB) | β | 516 |
| M4K Memory Blocks | β | 36 (4,608 bits each) |
| Embedded 18x18 Multipliers | β | 18 |
| PLLs | β | 4 |
| Maximum User I/O | β | 85 |
| Package | β | 144-LQFP (TQFP-144) |
| Core Voltage | β | 1.15 V to 1.25 V |
| I/O Voltage Support | β | 1.5V / 1.8V / 2.5V / 3.0V / 3.3V |
| Configuration Modes | β | Active Serial, Passive Serial, JTAG |
| Speed Grade | β | 7 |