EPF10K250EBI600-3 vs EPF10K200EBI600-2N Comparison

Detailed side-by-side comparison of EPF10K250EBI600-3 by Intel and EPF10K200EBI600-2N by Intel. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Intel
EPF10K250EBI600-3 EPF10K250EBI600-3 - 250K Gates FLEX 10KE FPGA, 600-BGA | Intel

EPF10K250EBI600-3 - 250K Gates FLEX 10KE FPGA, 600-BGA | Intel

EPF10K250EBI600-3 ⚠ Last Time Buy
Intel
EPF10K200EBI600-2N EPF10K200EBI600-2N - 200K Gates FLEX 10KE FPGA | Intel

EPF10K200EBI600-2N - 200K Gates FLEX 10KE FPGA | Intel

EPF10K200EBI600-2N Obsolete

Specification Comparison

Parameter EPF10K250EBI600-3 EPF10K200EBI600-2N
Brand Intel Intel
Category FPGA & CPLD FPGA & CPLD
Lifecycle Status Last_time_buy Obsolete
Stock Status In Stock In Stock
Unit Price (USD) $110.00 $140.00
Family FLEX 10KE FLEX 10KE
Logic Elements 12,160 β€”
Typical Gate Count 250,000 system gates β€”
Embedded System Blocks (ESBs) 12 β€”
Maximum User I/O 470 β€”
Dedicated Inputs 4 6
PLLs 4 β€”
On-chip RAM Up to 40 Kbits β€”
Package 600-ball BGA (HBGA) 600-ball BGA (45 mm x 45 mm, 1.27 mm pitch)
Ball Pitch 1.93 mm β€”
Core Voltage 2.3 V (FLEX 10KE standard) [DATA_NEEDED: confirm exact VCCINT] β€”
Operating Temperature Industrial, 0C to +85C [DATA_NEEDED: confirm -40C to +85C range] 0 Β°C to +70 Β°C (commercial)
Speed Grade -3 (fastest) β€”
Process Technology 0.22 Β΅m CMOS, 4-layer metal β€”
Configuration Method SRAM, requires external configuration device (EPC series) SRAM, JTAG (IEEE 1149.1), serial configuration EPROM
Mounting Type Surface Mount Surface Mount (BGA)
RoHS Status Not specified (SnPb / tin-lead finish per legacy distributor listing) [DATA_NEEDED: RoHS compliance status]
Lead-free no (legacy tin-lead per distributor description) β€”
Typical Gates β€” 200,000
Maximum System Gates β€” 513,000
Logic Elements (LEs) β€” 9,984
Embedded Array Blocks (EABs) β€” 12
Total RAM Bits β€” 98,304
User I/O Pins β€” 470
Technology / Process β€” 0.22 Β΅m CMOS SRAM
Core Supply Voltage β€” 2.5 V (2.3 V to 2.7 V)
I/O Supply Voltage β€” 2.5 V / 3.3 V (5 V tolerant I/O available)
Propagation Delay β€” 0.4 ns to 0.6 ns (per LE)
Maximum Internal Frequency β€” 200 MHz
MSL Level β€” [DATA_NEEDED: moisture sensitivity level]

Datasheets & Resources

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