EPF10K250EBI600-3 vs EPF10K200EBI600-2N Comparaison
Comparaison détaillée côte à côte de EPF10K250EBI600-3 par Intel et EPF10K200EBI600-2N par Intel. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Intel
EPF10K250EBI600-3 - 250K Gates FLEX 10KE FPGA, 600-BGA | Intel
EPF10K250EBI600-3 ⚠ Dernier achatComparaison des spécifications
| Paramètre | EPF10K250EBI600-3 | EPF10K200EBI600-2N |
|---|---|---|
| Marque | Intel | Intel |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Dernier achat | Obsolete |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $110,00 | $140,00 |
| Family | FLEX 10KE | FLEX 10KE |
| Logic Elements | 12,160 | — |
| Typical Gate Count | 250,000 system gates | — |
| Embedded System Blocks (ESBs) | 12 | — |
| Maximum User I/O | 470 | — |
| Dedicated Inputs | 4 | 6 |
| PLLs | 4 | — |
| On-chip RAM | Up to 40 Kbits | — |
| Boîtier | 600-ball BGA (HBGA) | 600-ball BGA (45 mm x 45 mm, 1.27 mm pitch) |
| Ball Pitch | 1.93 mm | — |
| Core Voltage | 2.3 V (FLEX 10KE standard) [DATA_NEEDED: confirm exact VCCINT] | — |
| Température de fonctionnement | Industrial, 0C to +85C [DATA_NEEDED: confirm -40C to +85C range] | 0 °C to +70 °C (commercial) |
| Speed Grade | -3 (fastest) | — |
| Process Technology | 0.22 µm CMOS, 4-layer metal | — |
| Configuration Method | SRAM, requires external configuration device (EPC series) | SRAM, JTAG (IEEE 1149.1), serial configuration EPROM |
| Type de montage | Surface Mount | Surface Mount (BGA) |
| Statut RoHS | Not specified (SnPb / tin-lead finish per legacy distributor listing) | [DATA_NEEDED: RoHS compliance status] |
| Lead-free | no (legacy tin-lead per distributor description) | — |
| Typical Gates | — | 200,000 |
| Maximum System Gates | — | 513,000 |
| Logic Elements (LEs) | — | 9,984 |
| Embedded Array Blocks (EABs) | — | 12 |
| Total RAM Bits | — | 98,304 |
| User I/O Pins | — | 470 |
| Technology / Process | — | 0.22 µm CMOS SRAM |
| Core Supply Voltage | — | 2.5 V (2.3 V to 2.7 V) |
| I/O Supply Voltage | — | 2.5 V / 3.3 V (5 V tolerant I/O available) |
| Propagation Delay | — | 0.4 ns to 0.6 ns (per LE) |
| Maximum Internal Frequency | — | 200 MHz |
| Niveau MSL | — | [DATA_NEEDED: moisture sensitivity level] |