EPF10K250EBI600-3 vs EPF10K200EBI600-2N Vergleich
Detaillierter Direktvergleich von EPF10K250EBI600-3 von Intel und EPF10K200EBI600-2N von Intel. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Intel
EPF10K250EBI600-3 - 250K Gates FLEX 10KE FPGA, 600-BGA | Intel
EPF10K250EBI600-3 ⚠ Letzte BestellmöglichkeitSpezifikationsvergleich
| Parameter | EPF10K250EBI600-3 | EPF10K200EBI600-2N |
|---|---|---|
| Marke | Intel | Intel |
| Kategorie | FPGA & CPLD | FPGA & CPLD |
| Lebenszyklusstatus | Letzte Kaufgelegenheit | Obsolete |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $110,00 | $140,00 |
| Family | FLEX 10KE | FLEX 10KE |
| Logic Elements | 12,160 | — |
| Typical Gate Count | 250,000 system gates | — |
| Embedded System Blocks (ESBs) | 12 | — |
| Maximum User I/O | 470 | — |
| Dedicated Inputs | 4 | 6 |
| PLLs | 4 | — |
| On-chip RAM | Up to 40 Kbits | — |
| Gehäuse | 600-ball BGA (HBGA) | 600-ball BGA (45 mm x 45 mm, 1.27 mm pitch) |
| Ball Pitch | 1.93 mm | — |
| Core Voltage | 2.3 V (FLEX 10KE standard) [DATA_NEEDED: confirm exact VCCINT] | — |
| Betriebstemperatur | Industrial, 0C to +85C [DATA_NEEDED: confirm -40C to +85C range] | 0 °C to +70 °C (commercial) |
| Speed Grade | -3 (fastest) | — |
| Process Technology | 0.22 µm CMOS, 4-layer metal | — |
| Configuration Method | SRAM, requires external configuration device (EPC series) | SRAM, JTAG (IEEE 1149.1), serial configuration EPROM |
| Montageart | Surface Mount | Surface Mount (BGA) |
| RoHS-Status | Not specified (SnPb / tin-lead finish per legacy distributor listing) | [DATA_NEEDED: RoHS compliance status] |
| Lead-free | no (legacy tin-lead per distributor description) | — |
| Typical Gates | — | 200,000 |
| Maximum System Gates | — | 513,000 |
| Logic Elements (LEs) | — | 9,984 |
| Embedded Array Blocks (EABs) | — | 12 |
| Total RAM Bits | — | 98,304 |
| User I/O Pins | — | 470 |
| Technology / Process | — | 0.22 µm CMOS SRAM |
| Core Supply Voltage | — | 2.5 V (2.3 V to 2.7 V) |
| I/O Supply Voltage | — | 2.5 V / 3.3 V (5 V tolerant I/O available) |
| Propagation Delay | — | 0.4 ns to 0.6 ns (per LE) |
| Maximum Internal Frequency | — | 200 MHz |
| MSL-Level | — | [DATA_NEEDED: moisture sensitivity level] |