EPF10K250EBI600-3 vs EPF10K200EBI600-2N 비교
다음의 상세 나란히 비교: EPF10K250EBI600-3 제조: Intel 및 EPF10K200EBI600-2N 제조: Intel. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | EPF10K250EBI600-3 | EPF10K200EBI600-2N |
|---|---|---|
| 브랜드 | Intel | Intel |
| 카테고리 | FPGA & CPLD | FPGA & CPLD |
| 수명 주기 상태 | 최종 구매 | Obsolete |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $110.00 | $140.00 |
| Family | FLEX 10KE | FLEX 10KE |
| Logic Elements | 12,160 | — |
| Typical Gate Count | 250,000 system gates | — |
| Embedded System Blocks (ESBs) | 12 | — |
| Maximum User I/O | 470 | — |
| Dedicated Inputs | 4 | 6 |
| PLLs | 4 | — |
| On-chip RAM | Up to 40 Kbits | — |
| 패키지 | 600-ball BGA (HBGA) | 600-ball BGA (45 mm x 45 mm, 1.27 mm pitch) |
| Ball Pitch | 1.93 mm | — |
| Core Voltage | 2.3 V (FLEX 10KE standard) [DATA_NEEDED: confirm exact VCCINT] | — |
| 동작 온도 | Industrial, 0C to +85C [DATA_NEEDED: confirm -40C to +85C range] | 0 °C to +70 °C (commercial) |
| Speed Grade | -3 (fastest) | — |
| Process Technology | 0.22 µm CMOS, 4-layer metal | — |
| Configuration Method | SRAM, requires external configuration device (EPC series) | SRAM, JTAG (IEEE 1149.1), serial configuration EPROM |
| 실장 유형 | Surface Mount | Surface Mount (BGA) |
| RoHS 상태 | Not specified (SnPb / tin-lead finish per legacy distributor listing) | [DATA_NEEDED: RoHS compliance status] |
| Lead-free | no (legacy tin-lead per distributor description) | — |
| Typical Gates | — | 200,000 |
| Maximum System Gates | — | 513,000 |
| Logic Elements (LEs) | — | 9,984 |
| Embedded Array Blocks (EABs) | — | 12 |
| Total RAM Bits | — | 98,304 |
| User I/O Pins | — | 470 |
| Technology / Process | — | 0.22 µm CMOS SRAM |
| Core Supply Voltage | — | 2.5 V (2.3 V to 2.7 V) |
| I/O Supply Voltage | — | 2.5 V / 3.3 V (5 V tolerant I/O available) |
| Propagation Delay | — | 0.4 ns to 0.6 ns (per LE) |
| Maximum Internal Frequency | — | 200 MHz |
| MSL 레벨 | — | [DATA_NEEDED: moisture sensitivity level] |