EPF10K30ETC144-3N vs EPF10K30ETI144-3 Comparison
Detailed side-by-side comparison of EPF10K30ETC144-3N by Intel and EPF10K30ETI144-3 by Altera. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | EPF10K30ETC144-3N | EPF10K30ETI144-3 |
|---|---|---|
| Brand | Intel | Altera |
| Category | FPGA & CPLD | FPGA & CPLD |
| Lifecycle Status | Nrnd | Obsolete |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $26.75 | $29.80 |
| Family | FLEX 10KE | FLEX-10KE Embedded Programmable Logic Device |
| Logic Family | CMOS | β |
| Typical Gates | 30,000 | β |
| Logic Elements / Cells | 1,728 | β |
| Logic Array Blocks (LABs) | 216 | 216 |
| Embedded Memory Bits | 24,576 | β |
| User I/Os | 102 | β |
| Number of Pins | 144 | β |
| Package Type | TQFP-144 (22 Γ 22 mm, 0.5 mm pitch) | β |
| Package Code | LFQFP | β |
| Terminal Form | Gull Wing | β |
| Mounting Type | Surface Mount | Surface Mount (Gull Wing) |
| Technology | 0.22 Β΅m CMOS, SRAM-based | β |
| Core Supply Voltage (VCCINT) | 2.5 V | β |
| Operating Temperature | 0 Β°C to 70 Β°C (Commercial) | -40C to +85C (Industrial) |
| Propagation Delay | 0.6 ns (typical) | β |
| Internal Frequency | [DATA_NEEDED: internal frequency max] | β |
| Programming Method | JTAG (IEEE 1149.1), in-system SRAM configuration | β |
| Configuration Memory | Volatile SRAM (requires external configuration device) | β |
| RoHS Status | [DATA_NEEDED: RoHS status] | Non-Compliant (Sn/Pb lead finish) |
| Series | β | FLEX-10KE |
| Logic Elements | β | 1728 |
| Embedded RAM | β | 24,576 bits |
| Embedded Array Blocks (EABs) | β | 6 |
| Maximum User I/O | β | 102 |
| Maximum Equivalent Gates | β | 119,000 |
| Pin-to-Pin Delay (Speed Grade) | β | 12.5 ns |
| Supply Voltage (Core) | β | 2.5 V / 3.3 V |
| I/O Voltage Tolerance | β | 5.0 V / 3.3 V / 2.5 V (multi-volt) |
| Package | β | 144-LQFP (LFQFP) |
| Package Height | β | 1.6 mm |
| Lead Finish | β | Tin/Lead (Sn/Pb) |
| Configuration Method | β | SRAM (volatile) + JTAG IEEE 1149.1 |