EPM570T144C5N vs EPM570T144C3N Comparison
Detailed side-by-side comparison of EPM570T144C5N by Intel and EPM570T144C3N by Altera. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Altera
EPM570T144C3N
EPM570T144C3N - 570 LEs MAX II CPLD, TQFP-144 | Altera/Intel
EPM570T144C3N β ActiveSpecification Comparison
| Parameter | EPM570T144C5N | EPM570T144C3N |
|---|---|---|
| Brand | Intel | Altera |
| Category | FPGA & CPLD | FPGA & CPLD |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $9.35 | $9.60 |
| Family | MAX II | MAX II |
| Series | MAX II Device | β |
| Logic Elements (LEs) | 570 | β |
| Macrocells | 440 | β |
| User I/Os | 116 | 116 |
| Internal User Flash Memory | 8 Kbit | β |
| Global Clocks | 4 | β |
| Process Technology | 0.18 Β΅m 6-layer-metal flash | β |
| Core Voltage (VCCINT) | 1.8 V (typical, internally regulated) | β |
| I/O Voltage (VCCIO) | 1.5 V / 1.8 V / 2.5 V / 3.3 V (multi-voltage, per bank) | β |
| Maximum User I/O Pins | 116 | β |
| Propagation Delay (tPD) | 5.5 ns (typical, [DATA_NEEDED: exact speed grade]) | 5.4 ns (max) |
| Maximum Frequency (fMAX) | 201.1 MHz | 300 MHz (typ) |
| Operating Temperature | 0 Β°C to +85 Β°C (commercial, C5 grade) | 0C to +85C (commercial) |
| Package | TQFP-144 (20 Γ 20 mm, 0.5 mm pitch) | TQFP-144 |
| Mounting Type | Surface Mount | Surface Mount |
| Programming Interface | IEEE 1149.1 JTAG (in-system programmable) | JTAG (IEEE 1149.1), ISP |
| Configuration Storage | On-chip non-volatile flash | β |
| Supported I/O Standards | LVCMOS, LVTTL, PCI, LVDS, SSTL (per bank VCCIO) | β |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| MSL Level | 3 (per JEDEC J-STD-020) | β |
| Design Software | Intel Quartus II (MAX II device support) | β |
| Device | β | EPM570 |
| Logic Elements | β | 570 |
| Typical Macrocells | β | 440 |
| User Flash Memory (UFM) | β | 8 Kbits |
| Core Voltage | β | 3.3 V |
| Process | β | 0.18 Β΅m, 6-layer-metal flash CMOS |