MT40A256M16GE-083E - DDR4 4Gb 256Mx16 2400MHz DRAM | Micron
MPN: MT40A256M16GE-083E β End of Life| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.2 | $3.20 |
| 10 | $2.95 | $29.50 |
| 100 | $2.7 | $270.00 |
| 500 | $2.45 | $1,225.00 |
| 1,000 | $2.2 | $2,200.00 |
Drop-in alternatives for MT40A256M16GE-083E β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
MT40A256M16GE-083E IT:B
β Drop-Inπ Reference alternative (not in catalog)
MT40A256M16GE-083E-AUT
β Drop-Inπ Reference alternative (not in catalog)
MT40A256M16GE-083E-AIT
β Drop-Inπ Reference alternative (not in catalog)
MT40A256M16GE-075E:B
β Drop-Inβ In Stock
$3.95 / Unit
View Datasheet βK4A4G165WE-BCPB
β Drop-Inπ Reference alternative (not in catalog)
NT5AD256M16B2-GNI
β Drop-Inπ Reference alternative (not in catalog)
MT40A256M16LY-062E:F
β Drop-Inπ Reference alternative (not in catalog)
MT40A256M16GE-083E Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Density | 4 Gbit |
| Organization | 256M x 16 |
| Clock Frequency | 1200 MHz (DDR4-2400) |
| Supply Voltage | 1.2 V |
| Package | 96-ball FBGA, 9 x 14 mm |
| Mounting Type | Surface Mount |
| Interface | Parallel |
| Technology | CMOS DRAM |
| ECCN | EAR99 |
| Country of Origin | China |
| Halogen Free | Compliant |
| Lead Free | Yes |
| Introduction Date | August 2017 |
| Lifecycle | Obsolete / End of Life (per distributor cross-reference data) |
MT40A256M16GE-083E 96-ball fbga, 9 x 14 mm Pin Configuration Guide
Complete pinout information for MT40A256M16GE-083E (96-ball fbga, 9 x 14 mm package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for MT40A256M16GE-083E.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
MT40A256M16GE-083E is suitable for 6 applications: Industrial Embedded Controllers, Networking and Communication Equipment, Automotive Telematics and Infotainment, Set-Top Boxes and Smart TV Platforms, Test and Measurement Instrumentation, IoT Gateways and Smart Home Hubs.
Industrial Embedded Controllers
Industrial PLCs, HMIs, and edge controllers frequently use 16-bit DDR4 interfaces with 4 Gbit density, exactly matching the MT40A256M16GE-083E's 256M x 16 organization at DDR4-2400. The 1.2 V supply reduces DRAM power draw compared to DDR3, which matters in fanless sealed enclosures where every watt affects thermal design. Memory sits on the controller's dedicated DDR4 PHY with fly-by routing and ODT, delivering roughly 4.8 GB/s peak bandwidth from a single x16 device - sufficient for Linux-class SoCs and real-time data logging. For extended industrial temperatures, the pin-compatible MT40A256M16GE-083E IT variant should be specified instead of the commercial grade.
Recommended
Networking and Communication Equipment
Switch, router, and CPE line cards use x16 DDR4 components for packet buffering and management-CPU main memory. The MT40A256M16GE-083E provides 4 Gbit per device at DDR4-2400, and two devices in 32-bit configuration deliver about 9.6 GB/s peak bandwidth - adequate for gigabit-class forwarding buffers and QoS queues. The 96-ball FBGA 9 x 14 mm footprint allows dense multi-device layouts on switch motherboards, and the DDR4 bank-group architecture improves random access efficiency for queue management. Second-source qualification with Samsung K4A4G165WE-BCPB on the identical footprint is a common supply-chain strategy in this sector.
Recommended
Automotive Telematics and Infotainment
Head units, telematics gateways, and digital clusters require automotive-qualified DRAM; for these platforms the MT40A256M16GE-083E-AUT suffix provides the same 4 Gbit, 256M x 16, DDR4-2400 silicon with Micron's automotive qualification flow. A single AUT device offers approximately 4.8 GB/s peak bandwidth at 1.2 V, supporting Android Automotive or QNX graphics stacks when paired in 32-bit or 64-bit configurations. The automotive grade also brings documented temperature and reliability screening that commercial parts lack. Designers must specify -AUT (or -AAT/-AIT) explicitly on the BOM, as commercial -083E stock is not acceptable for automotive platforms.
Recommended
Set-Top Boxes and Smart TV Platforms
Broadcast and OTT set-top box SoCs commonly attach one or two x16 DDR4 devices as main memory. The MT40A256M16GE-083E's 4 Gbit capacity supports 512 MB configurations (two devices) or 256 MB (single device, half-organization use), adequate for 4K HEVC decode buffering on many STB platforms. DDR4-2400 at 1.2 V lowers idle power for always-on standby compliance (e.g., EU energy regulations), and DLL-off plus max power-down modes reduce consumption further during low-activity states. The standard 96-ball FBGA footprint keeps the memory within a short point-to-point trace of the SoC DDR PHY, simplifying two-layer-stacked PCB cost targets.
Recommended
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and protocol analyzers use DDR4 SDRAM as deep acquisition memory. The MT40A256M16GE-083E's DDR4-2400 speed and x16 wide bus support sustained streaming of sampled data into capture buffers, while 4 Gbit density per device enables multi-gigasample record lengths when 8-16 devices are ganged on 64/128-bit buses. The 1.2 V operation and bank-group architecture improve throughput for interleaved write streams from front-end ADCs. Because these instruments demand long production lifetimes, designers should pair commercial-grade stock with a qualified second source (Samsung K4A4G165WE-BCPB) to hedge against the -083E commercial EOL.
Recommended
IoT Gateways and Smart Home Hubs
Smart home hubs, industrial IoT gateways, and edge AI boxes typically run Linux on application processors with 16-bit DDR4 memory interfaces. The MT40A256M16GE-083E supplies 512 MB (4 Gbit) of main memory - the sweet spot for MQTT broker, Zigbee/Thread stack, and lightweight container workloads - while drawing DRAM power at 1.2 V suitable for passively cooled or PoE-powered enclosures. DDR4-2400 delivers about 4.8 GB/s peak, sufficient for concurrent sensor aggregation and local inference. The wide x16 organization also allows single-device designs that reduce BOM cost and PCB area compared to two x8 parts.
Recommended
Recommended Products Summary
Engineering reference data for MT40A256M16GE-083E β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MT40A256M16GE-083E IT:B | MT40A256M16GE-083E-AUT | K4A4G165WE-BCPB | NT5AD256M16B2-GNI |
|---|---|---|---|---|---|
| Brand | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics | Nanya Technology |
| Package | 96-ball FBGA (9x14 mm) | 96-ball FBGA (9x14 mm) - same | 96-ball FBGA (9x14 mm) - same | 96-ball FBGA (9x14 mm) - same | 96-ball FBGA (9x14 mm) - same |
| Density | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Data Rate | DDR4-2400 (1200 MHz) | DDR4-2400 (1200 MHz) | DDR4-2400 (1200 MHz) | [DATA_NEEDED] | [DATA_NEEDED] |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Temperature Grade | Commercial | Industrial (IT) | Automotive (AUT) | [DATA_NEEDED] | [DATA_NEEDED] |
| Lifecycle Status | EOL / Obsolete (base commercial grade) | EOL (broker stock only) | Listed in Micron part catalog (active) | Active second source | Active second source |
Key Differentiators
- Extended industrial temperature availability (vs K4A4G165WE-BCPB)
- Automotive qualified drop-in option (vs NT5AD256M16B2-GNI)
- DDR4-2666 upgrade path without PCB change (vs MT40A256M16GE-083E IT:B)
- Supply continuity trade-off (vs MT40A256M16GE-083E-AUT)
Design Notes
At DDR4-2400 (1200 MHz clock), route the address/command/control bus in fly-by topology with VTT termination at 0.6 V (half of VDDQ 1.2 V). Keep DQ/DQS trace length matching within intra-lane skew windows and route over continuous reference planes. Coordinate on-die termination (ODT) settings between the memory controller and the MT40A256M16GE-083E during write leveling and read training. Micron publishes IBIS models for the 4Gb DDR4 family - run pre-layout simulation before finalizing stackup and trace impedance.
The base commercial MT40A256M16GE-083E:B is EOL per distributor cross-reference data, and open-market stock carries a reported 53% counterfeit threat. Source only from authorized distributors (DigiKey, Mouser) or verified XAIPART supply. If second-sourcing to Samsung K4A4G165WE-BCPB or Nanya NT5AD256M16B2-GNI, remember that SPD contents, timing registers, and boot-time training sequences differ even on pin-compatible footprints - update bootloader memory-init code and re-run margin validation on real hardware before releasing the change.
DRAM dynamic power scales with VDD squared and activity factor: at 1.2 V the DDR4 device draws substantially less core current than a comparable DDR3 part at 1.5 V (a roughly 36% reduction on the voltage term alone). Budget VDD/VDDQ rails at 1.2 V plus- minus 3% per JEDEC DDR4 practice, and size the VTT termination regulator for the address bus load - Estimated: for 4 devices on a shared fly-by bus, VTT transient currents of several hundred milliamps are typical. Use separate bulk and 0.1 uF per-ball-pair decoupling near the 96-ball FBGA.
The 96-ball FBGA (9 x 14 mm) with 0.8 mm ball pitch requires a dedicated land pattern per Micron's package outline drawing; do not reuse DDR3 96-ball land patterns blindly as ballout assignments changed between generations. Follow moisture sensitivity handling - bake per Micron MSL guidance if floor-life is exceeded before reflow. Place decoupling capacitors on the far side of the board directly beneath the ball array to minimize loop inductance on the 1.2 V rail.
Compliance Information
Halogen free compliant and lead free per GlobalSpec supplier data; FindIC lists FBGA-96 lead free. ECCN EAR99. AEC-Q100 qualification applies only to the -AUT suffix variant.
