H5AN4G6NBJR-RDC vs H5AN4G8NBJR-VKC Comparison

Detailed side-by-side comparison of H5AN4G6NBJR-RDC by SK hynix and H5AN4G8NBJR-VKC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5AN4G8NBJR-VKC H5AN4G8NBJR-VKC - 4Gb DDR4-2666 SDRAM x8 | SK hynix

H5AN4G8NBJR-VKC - 4Gb DDR4-2666 SDRAM x8 | SK hynix

H5AN4G8NBJR-VKC ✓ Active

Specification Comparison

Parameter H5AN4G6NBJR-RDC H5AN4G8NBJR-VKC
Brand SK hynix SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $6.15 $2.40
Memory Type DDR4 SDRAM DDR4 SDRAM
Density 4 Gb —
Organization 256M x 16 —
Supply Voltage 1.2 V —
Interface CMOS, fully synchronous —
Package Code TFBGA (FBGA-96) —
Package Shape Rectangular —
Package Width 7.5 mm —
Number of Terminals 96 —
Mounting Type Surface Mount Surface Mount
Temperature Grade OTHER (per Partstack listing); -I industrial option -40C to +95C per family datasheet —
Self Refresh Auto / Self Refresh —
Data Mask Function Yes —
Asynchronous Reset Yes —
On-Die Termination Dynamic ODT —
ZQ Calibration Yes —
Write Leveling Yes —
CRC Function Yes —
Lead-Free / Halogen-Free Yes (per datasheet cover: Lead-Free & Halogen-Free) —
Speed Grade -RDC (see manufacturer datasheet for validated data-rate bin) —
Memory Size — 4 Gb
Memory Organization — 512M x8
Data Rate — 2666 Mbps (DDR4-2666)
Memory Interface — Parallel
Supply Voltage (VDD) — 1.2 V
Package — FBGA-78 (7.5 x 11 mm)
Technology — CMOS DRAM
Volatile / Non-Volatile — Volatile
Operating Temperature — [DATA_NEEDED: operating temperature range]
CAS Latency — [DATA_NEEDED: CAS latency for 2666 grade]
Refresh — [DATA_NEEDED: refresh rate]
RoHS Status — Compliant (Lead-Free & Halogen-Free per datasheet)
Packaging — Tray
Lifecycle Status — Active

Datasheets & Resources

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