H5AN4G6NBJR-RDC vs H5AN4G8NBJR-VKC 对比
详细并排对比 H5AN4G6NBJR-RDC 出自 SK hynix 和 H5AN4G8NBJR-VKC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5AN4G6NBJR-RDC | H5AN4G8NBJR-VKC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $6.15 | $2.40 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gb | — |
| 存储组织 | 256M x 16 | — |
| 电源电压 | 1.2 V | — |
| 接口 | CMOS, fully synchronous | — |
| Package Code | TFBGA (FBGA-96) | — |
| Package Shape | Rectangular | — |
| Package Width | 7.5 mm | — |
| Number of Terminals | 96 | — |
| 安装类型 | Surface Mount | Surface Mount |
| Temperature Grade | OTHER (per Partstack listing); -I industrial option -40C to +95C per family datasheet | — |
| Self Refresh | Auto / Self Refresh | — |
| Data Mask Function | Yes | — |
| Asynchronous Reset | Yes | — |
| On-Die Termination | Dynamic ODT | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| Lead-Free / Halogen-Free | Yes (per datasheet cover: Lead-Free & Halogen-Free) | — |
| Speed Grade | -RDC (see manufacturer datasheet for validated data-rate bin) | — |
| 存储容量 | — | 4 Gb |
| Memory Organization | — | 512M x8 |
| 数据速率 | — | 2666 Mbps (DDR4-2666) |
| Memory Interface | — | Parallel |
| Supply Voltage (VDD) | — | 1.2 V |
| 封装 | — | FBGA-78 (7.5 x 11 mm) |
| Technology | — | CMOS DRAM |
| Volatile / Non-Volatile | — | Volatile |
| 工作温度 | — | [DATA_NEEDED: operating temperature range] |
| CAS 延迟 | — | [DATA_NEEDED: CAS latency for 2666 grade] |
| Refresh | — | [DATA_NEEDED: refresh rate] |
| RoHS 状态 | — | Compliant (Lead-Free & Halogen-Free per datasheet) |
| Packaging | — | Tray |
| 生命周期状态 | — | Active |