H5AN4G6NBJR-RDC vs H5ANAG6NBJR-UHC Comparison

Detailed side-by-side comparison of H5AN4G6NBJR-RDC by SK hynix and H5ANAG6NBJR-UHC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5ANAG6NBJR-UHC H5ANAG6NBJR-UHC - 4Gb DDR4 SDRAM x16 | SK Hynix

H5ANAG6NBJR-UHC - 4Gb DDR4 SDRAM x16 | SK Hynix

H5ANAG6NBJR-UHC ✓ Active

Specification Comparison

Parameter H5AN4G6NBJR-RDC H5ANAG6NBJR-UHC
Brand SK hynix SK hynix
Category Memory ICs DRAM
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $6.15 $8.09
Memory Type DDR4 SDRAM DDR4 SDRAM
Density 4 Gb 4 Gb
Organization 256M x 16 256M x 16
Supply Voltage 1.2 V —
Interface CMOS, fully synchronous DDR4 (CMOS)
Package Code TFBGA (FBGA-96) —
Package Shape Rectangular —
Package Width 7.5 mm —
Number of Terminals 96 —
Mounting Type Surface Mount —
Temperature Grade OTHER (per Partstack listing); -I industrial option -40C to +95C per family datasheet —
Self Refresh Auto / Self Refresh —
Data Mask Function Yes —
Asynchronous Reset Yes Supported
On-Die Termination Dynamic ODT —
ZQ Calibration Yes Supported
Write Leveling Yes Supported
CRC Function Yes —
Lead-Free / Halogen-Free Yes (per datasheet cover: Lead-Free & Halogen-Free) —
Speed Grade -RDC (see manufacturer datasheet for validated data-rate bin) —
Package — PBGA96 / FBGA-96 (TFBGA)
Package Dimensions — 13 mm length (per JESD-30 R-PBGA-B96)
Access Mode — Multi Bank, Page Burst
Operating Temperature — -40C to +95C
Refresh — Auto / Self Refresh
Data Mask — Supported (DM function)
On-Chip Termination — Dynamic ODT
CRC — Supported
Supply Voltage Class — DDR4 (1.2 V class)
RoHS Status — RoHS Compliant
REACH Compliance — Compliant
ECCN — EAR99
HTS Code — 8542.32.00.36
CAS Latency — [DATA_NEEDED: CAS Latency]
Max Data Rate — [DATA_NEEDED: Max Data Rate]

Datasheets & Resources

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