H5AN4G6NBJR-RDC vs H5ANAG6NBJR-UHC 对比
详细并排对比 H5AN4G6NBJR-RDC 出自 SK hynix 和 H5ANAG6NBJR-UHC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5AN4G6NBJR-RDC | H5ANAG6NBJR-UHC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $6.15 | $8.09 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gb | 4 Gb |
| 存储组织 | 256M x 16 | 256M x 16 |
| 电源电压 | 1.2 V | — |
| 接口 | CMOS, fully synchronous | DDR4 (CMOS) |
| Package Code | TFBGA (FBGA-96) | — |
| Package Shape | Rectangular | — |
| Package Width | 7.5 mm | — |
| Number of Terminals | 96 | — |
| 安装类型 | Surface Mount | — |
| Temperature Grade | OTHER (per Partstack listing); -I industrial option -40C to +95C per family datasheet | — |
| Self Refresh | Auto / Self Refresh | — |
| Data Mask Function | Yes | — |
| Asynchronous Reset | Yes | Supported |
| On-Die Termination | Dynamic ODT | — |
| ZQ Calibration | Yes | Supported |
| Write Leveling | Yes | Supported |
| CRC Function | Yes | — |
| Lead-Free / Halogen-Free | Yes (per datasheet cover: Lead-Free & Halogen-Free) | — |
| Speed Grade | -RDC (see manufacturer datasheet for validated data-rate bin) | — |
| 封装 | — | PBGA96 / FBGA-96 (TFBGA) |
| Package Dimensions | — | 13 mm length (per JESD-30 R-PBGA-B96) |
| Access Mode | — | Multi Bank, Page Burst |
| 工作温度 | — | -40C to +95C |
| Refresh | — | Auto / Self Refresh |
| Data Mask | — | Supported (DM function) |
| On-Chip Termination | — | Dynamic ODT |
| CRC | — | Supported |
| Supply Voltage Class | — | DDR4 (1.2 V class) |
| RoHS 状态 | — | RoHS Compliant |
| REACH Compliance | — | Compliant |
| ECCN | — | EAR99 |
| HTS Code | — | 8542.32.00.36 |
| CAS 延迟 | — | [DATA_NEEDED: CAS Latency] |
| Max Data Rate | — | [DATA_NEEDED: Max Data Rate] |