H5AN4G8NBJR-RDC vs H5AN4G8NBJR-VKC Comparison
Detailed side-by-side comparison of H5AN4G8NBJR-RDC by SK hynix and H5AN4G8NBJR-VKC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5AN4G8NBJR-RDC | H5AN4G8NBJR-VKC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.95 | $2.40 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | — |
| Organization | 512M x 8 | — |
| Interface | DDR4 (Double Data Rate IV) | — |
| Package | 78-ball FBGA | FBGA-78 (7.5 x 11 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Supply Voltage | [DATA_NEEDED: VDD supply voltage] | — |
| Data Rate | [DATA_NEEDED: speed grade Mbps] | 2666 Mbps (DDR4-2666) |
| Bank Architecture | 8 banks with 4 bank groups (x8) | — |
| Refresh | Auto-refresh and self-refresh | [DATA_NEEDED: refresh rate] |
| Temperature Grade | [DATA_NEEDED: operating temperature range] | — |
| Termination | On-Die Termination (ODT) | — |
| RoHS Status | Lead-Free & Halogen-Free (RoHS Compliant) | Compliant (Lead-Free & Halogen-Free per datasheet) |
| Process Technology | CMOS | — |
| Manufacturer | SK hynix | — |
| Family Series | H5AN4G4/8/6NBJR | — |
| Memory Size | — | 4 Gb |
| Memory Organization | — | 512M x8 |
| Memory Interface | — | Parallel |
| Supply Voltage (VDD) | — | 1.2 V |
| Technology | — | CMOS DRAM |
| Volatile / Non-Volatile | — | Volatile |
| Operating Temperature | — | [DATA_NEEDED: operating temperature range] |
| CAS Latency | — | [DATA_NEEDED: CAS latency for 2666 grade] |
| Packaging | — | Tray |
| Lifecycle Status | — | Active |