H5AN4G8NBJR-RDC - 4Gb DDR4 SDRAM x8 | SK hynix | Main Memory
MPN: H5AN4G8NBJR-RDC ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.2 | $4.20 |
| 10 | $3.9 | $39.00 |
| 100 | $3.55 | $355.00 |
| 500 | $3.25 | $1,625.00 |
| 1,000 | $2.95 | $2,950.00 |
Drop-in alternatives for H5AN4G8NBJR-RDC — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
H5AN4G8NBJR-PBC
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View Datasheet →H5AN4G8NBJR-UHC
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View Datasheet →H5AN4G8NBJR-VKC
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View Datasheet →H5AN4G8NBJR-XXC
✅ Drop-In📋 Reference alternative (not in catalog)
MT40A512M8RH-083E
✅ Drop-In✓ In Stock
$3.3 / Unit
View Datasheet →H5AN4G8NBJR-RDC Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Density | 4 Gbit |
| Organization | 512M x 8 |
| Interface | DDR4 (Double Data Rate IV) |
| Package | 78-ball FBGA |
| Mounting Type | Surface Mount |
| Bank Architecture | 8 banks with 4 bank groups (x8) |
| Refresh | Auto-refresh and self-refresh |
| Termination | On-Die Termination (ODT) |
| RoHS Status | Lead-Free & Halogen-Free (RoHS Compliant) |
| Process Technology | CMOS |
| Manufacturer | SK hynix |
| Family Series | H5AN4G4/8/6NBJR |
H5AN4G8NBJR-RDC 78-ball fbga Pin Configuration Guide
Complete pinout information for H5AN4G8NBJR-RDC (78-ball fbga package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for H5AN4G8NBJR-RDC.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
H5AN4G8NBJR-RDC is suitable for 6 applications: PC and Notebook Main Memory, Consumer Electronics (Set-Top Box, Smart TV), Industrial Controllers and HMI, Networking and Communication Equipment, Embedded Graphics and Display Systems, Test and Measurement Instruments.
PC and Notebook Main Memory
The H5AN4G8NBJR-RDC is designed primarily as main system memory in desktop, notebook, and all-in-one PC platforms. Its 4Gb density organized as 512M x 8 allows eight devices to populate a 64-bit unbuffered DIMM channel for 4GB-per-rank configurations. DDR4 bank-group architecture (4 bank groups x 8 banks on x8 devices) sustains high effective bandwidth by allowing back-to-back activations in different groups, matching CPU prefetch patterns. Designers should enable on-die termination and follow fly-by CA routing per DDR4 module reference designs; the lead-free, halogen-free FBGA construction supports RoHS-compliant consumer builds.
Recommended
Consumer Electronics (Set-Top Box, Smart TV)
Consumer DDR4 designs such as set-top boxes, smart TVs, and game consoles use solder-down 78-ball FBGA DRAMs like the H5AN4G8NBJR-RDC next to SoCs with integrated DDR4 controllers. The 4Gb x8 organization pairs well with SoCs that support 32-bit or 64-bit DDR4 buses, giving 2-8 GB of system memory with only 4-16 devices. The consumer C-grade bin balances cost and power at 1.2V-class operation, and self-refresh retains content during low-power standby modes. PCB designers should follow the SoC vendor's DDR4 SI guidelines: matched DQ/DM/DQS per byte lane, VTT termination rails, and ZQ calibration resistor placement.
Recommended
Industrial Controllers and HMI
Industrial automation controllers, HMIs, and edge gateways need large memory density and bandwidth for buffering fieldbus traffic, running Linux, and logging data. The H5AN4GxNBJR family is available in industrial -I grade bins (per the series datasheet), and the -RDC consumer bin serves cost-sensitive industrial variants. DDR4's lower 1.2V supply reduces dissipation in sealed, fanless enclosures compared to DDR3 designs. Soldered FBGA memory also improves vibration reliability versus socketed SODIMMs. Designers must confirm the -RDC bin's temperature rating, or select the -xxI industrial variant where -40C to +85C ambient operation is required.
Recommended
Networking and Communication Equipment
Routers, switches, and access points require high-bandwidth main memory for packet buffering and control-plane software. The H5AN4G8NBJR-RDC provides 4Gb per device, and x8 devices can be byte-laned across a 64-bit bus to sustain multi-Gbps throughput, with bank-group interleaving reducing effective latency for random packet access patterns. The DDR4 CA parity feature improves command-bus error resilience on long fly-by traces typical of switch PCBs. Octopart showed 34,000 pcs of family stock (July 2026), but 2026 DDR4 supply constraints make dual-sourcing with Micron MT40A512M8RH-083E prudent for networking BOMs.
Recommended
Embedded Graphics and Display Systems
Embedded graphics processors and display SoCs use 4Gb x8 DDR4 devices such as the H5AN4G8NBJR-RDC as frame buffer and texture memory. The DDR4 data rate supports the write bandwidth needed for high-resolution frame updates (e.g., 4K display pipelines), while on-die termination maintains signal integrity on the shared video-memory bus. The x8 organization provides per-byte data masking (DM), which is efficient for partial-frame and GUI-layer updates. Layout should keep each DQS/DQ byte lane length-matched within controller specification, and refresh scheduling should be coordinated with the graphics controller to avoid visual jitter under load.
Recommended
Test and Measurement Instruments
Oscilloscopes, logic analyzers, and signal generators embed DDR4 SDRAM like the H5AN4G8NBJR-RDC as deep acquisition memory. The 4Gb density supports long waveform records; x8 byte-lane organization with DM enables efficient, unmasked contiguous capture, while DDR4 bank-group architecture sustains streaming write bursts from high-speed acquisition ASICs. Design considerations include careful DQS gating calibration at the controller, ECC options (with additional x8 devices providing SECDED on instrument platforms), and thermal margining since instruments operate in enclosed chassis. Self-refresh supports post-trigger data retention through instrument standby states.
Recommended
Recommended Products Summary
Engineering reference data for H5AN4G8NBJR-RDC — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | H5AN4G8NBJR-PBC | H5AN4G8NBJR-VKC | MT40A512M8RH-083E |
|---|---|---|---|---|
| Brand | SK hynix | SK hynix | SK hynix | Micron Technology |
| Package | 78-ball FBGA | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same |
| Density | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 512M x 8 | 512M x 8 | 512M x 8 | 512M x 8 |
| Memory Interface | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM | DDR4 SDRAM |
| Data Rate / Speed Bin | [DATA_NEEDED: -RDC speed bin] | [DATA_NEEDED] | DDR4-2666 (2666 Mbps) | DDR4-1866 (-083E) |
| RoHS / Lead-Free | Lead-Free & Halogen-Free (RoHS Compliant) | RoHS compliant (family) | RoHS compliant (family) | RoHS compliant |
| Unit Price (qty 1) | $4.20 as of 2026-09-04 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Newest C-generation silicon in family (vs H5AN4G8NBJR-PBC)
- Higher data-rate headroom vs Micron cross (vs MT40A512M8RH-083E)
- Green package compliance (vs Generic DDR4 parts)
Design Notes
DDR4 x8 buses carry data at the controller's data rate on DQ/DQS/DM lanes and command/address on a fly-by CA bus. Keep each DQS-DQ byte lane length-matched to the controller specification, route VTT termination with adequate decoupling near each DRAM, and place the ZQ calibration resistor (240 ohm, 1%) within the datasheet-specified trace length of the ZQ ball. Use on-die termination (ODT) settings from the controller's training algorithm rather than fixed register values for first-pass margin.
Separate VDD, VDDQ, and VPP supply domains per the DDR4 standard with local bulk capacitance (e.g., 470uF per domain on a multi-device bus) plus 0.1uF per power/ground ball pair. Estimated: a 4Gb x8 DDR4 at 2400 Mbps with roughly 10mA per DQ switching at 1.2V can draw on the order of hundreds of mW per device active - verify against the datasheet IDD tables for your data rate and utilization, and size the VTT rail for peak ODT current.
Do not assume suffix interchangeability: within the H5AN4G8NBJR family, the two letters after 'BJR-' encode silicon generation, speed, and temperature bin, and memory controllers validate these via training and SPD data. Substituting a -RDC with a -VKC (DDR4-2666) is generally safe in one direction (faster bin on a slower setting) but never the reverse. Also confirm consumer (C) vs industrial (I) temperature grading before releasing industrial BOMs.
For solder-down FBGA designs, prefer six-layer or more PCBs with dedicated DDR4 power planes, fan out the 78 balls with via-in-pad or dog-bone escapes per SK hynix package layout guidelines, and avoid routing DDR4 signals across plane splits. Keep impedance-controlled 40-ohm DQ/CA traces and reference them to a continuous ground plane; this family is mechanically footprint-compatible across the H5AN4G4/8/6NBJR variants, enabling layout reuse across density and width options.
Compliance Information
Datasheet listings describe the H5AN4G8NBJR family as Lead-Free & Halogen-Free (RoHS Compliant). REACH and conflict-minerals status not stated in provided data.
