H5AN4G8NBJR-RDC vs MT40A512M8RH-083E Comparison
Detailed side-by-side comparison of H5AN4G8NBJR-RDC by SK hynix and MT40A512M8RH-083E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5AN4G8NBJR-RDC | MT40A512M8RH-083E |
|---|---|---|
| Brand | SK hynix | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.95 | $3.30 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gbit |
| Organization | 512M x 8 | 512M x 8 |
| Interface | DDR4 (Double Data Rate IV) | — |
| Package | 78-ball FBGA | 78-ball FBGA (9 x 10.5 mm) |
| Mounting Type | Surface Mount | — |
| Supply Voltage | [DATA_NEEDED: VDD supply voltage] | — |
| Data Rate | [DATA_NEEDED: speed grade Mbps] | — |
| Bank Architecture | 8 banks with 4 bank groups (x8) | — |
| Refresh | Auto-refresh and self-refresh | 64 ms, 8192-cycle refresh (to 95C) |
| Temperature Grade | [DATA_NEEDED: operating temperature range] | — |
| Termination | On-Die Termination (ODT) | — |
| RoHS Status | Lead-Free & Halogen-Free (RoHS Compliant) | Compliant |
| Process Technology | CMOS | — |
| Manufacturer | SK hynix | — |
| Family Series | H5AN4G4/8/6NBJR | — |
| Industry Speed Grade | — | DDR4-2400 |
| Clock Rate | — | 1.2 GHz |
| Internal Banks | — | 8 banks (2 groups of 4) |
| Prefetch | — | 8n-bit |
| VDD / VDDQ | — | 1.2 V +/-60 mV |
| VPP | — | 2.5 V, -125 mV/+250 mV |
| I/O Structure | — | 1.2 V pseudo open-drain |
| VREFDQ | — | On-die internal, adjustable generation |
| Operating Temperature | — | 0C to +95C |
| FBGA Code | — | D9TGG |
| Marking Code | — | D9TGG |
| Data Strobe Preamble | — | Programmable |
| CAS Latency | — | [DATA_NEEDED: CAS latency per speed bin table] |