H5AN4G8NBJR-UHC vs K4A8G085WC-BCRC Comparison
Detailed side-by-side comparison of H5AN4G8NBJR-UHC by SK hynix and K4A8G085WC-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5AN4G8NBJR-UHC | K4A8G085WC-BCRC |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | DRAM |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.18 | $4.30 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 8 Gbit |
| Organization | 512M x 8 | 1G x 8 |
| Data Rate | 2400 Mbps (PC2400) | 2400 Mbps (DDR4-2400) |
| Supply Voltage | 1.2 V | 1.2 V |
| Interface | DDR4 (JEDEC) | — |
| Package | TFBGA-78 (11 x 7.5 mm) | 78-ball FBGA (TFBGA) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | CMOS DRAM | — |
| Lifecycle Code | Active | — |
| RoHS Status | Compliant (Rohs Code: Yes) | Compliant |
| REACH Compliance | Compliant | — |
| Manufacturer | SK Hynix Inc. | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | 0C to +95C |
| CAS Latency | [DATA_NEEDED: CAS latency for -UHC speed bin] | — |
| Refresh | [DATA_NEEDED: refresh rate 1x/2x/4x support] | Auto/Self refresh |
| Terminal Pitch | — | 0.8 mm |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Dynamic On-Die Termination | — | Yes |
| Data Mask Function | — | Yes |