SK hynix

H5AN4G8NBJR-UHC - 4Gb DDR4 SDRAM 2400, 1.2V | SK Hynix

MPN: H5AN4G8NBJR-UHC ✓ Active
In Stock Ships in 1-3 business days
1.2 V Vdss TFBGA-78 (11 x 7.5 mm) Package DDR4 SDRAM Memory
From $3.18 USD / Unit
MOQ: 1 |
Price updated: 2026-09-04
Volume Pricing
Qty Unit Price Extended
1 $5.9 $5.90
10 $5.31 $53.10
100 $4.75 $475.00
500 $4.02 $2,010.00
1,000 $3.18 $3,180.00
ℹ️ All prices are in USD

Drop-in alternatives for H5AN4G8NBJR-UHC — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

H5AN4G8NBJR-RDC

✅ Drop-In
SK hynix
📦 TFBGA-78 (11 x 7.5 mm)
DDR4 SDRAM · 4 Gbit · 512M x 8 · DDR4 (Double Data Rate IV) · 78-ball FBGA · Surface Mount · [DATA_NEEDED: VDD supply voltage] · [DATA_NEEDED: speed grade Mbps]

✓ In Stock

$2.95 / Unit

View Datasheet →

H5AN4G8NBJR-PBC

✅ Drop-In
SK hynix
📦 TFBGA-78 (11 x 7.5 mm)
4 Gbit · 512M x 8 · DDR4 SDRAM · Parallel, JEDEC DDR4 · 1.2 V · 1.2 V · PBC · [DATA_NEEDED: Clock Frequency]

✓ In Stock

$2.2 / Unit

View Datasheet →

H5AN4G8NBJR-XNI

✅ Drop-In
📦 TFBGA-78 (11 x 7.5 mm)
same 4Gb x8 DDR4 die family, industrial-temperature-capable suffix per series comparison data

📋 Reference alternative (not in catalog)

MT40A512M8RH-083E

✅ Drop-In
Micron Technology
📦 FBGA-78
DDR4 SDRAM · 4 Gbit · 512M x 8 · DDR4-2400 · 1.2 GHz · 8 banks (2 groups of 4) · 8n-bit · 64 ms, 8192-cycle refresh (to 95C)

✓ In Stock

$3.3 / Unit

View Datasheet →

K4A4G085WD-BCTD

✅ Drop-In
Samsung Electronics
📦 FBGA-78
DDR4 SDRAM · D-die · 4 Gb · 512M x 8 · 2666 Mbps/pin · 1.2 V · 0C to +85C · 78-ball FBGA

✓ In Stock

$2.05 / Unit

View Datasheet →

MT40A1G8AG-062E

✅ Drop-In
Micron Technology
📦 FBGA-78
DDR4 SDRAM · 8 Gbit · 1G x 8 · Parallel · 1.6 GHz (DDR4-3200, 3200 MT/s data rate) · 19 ns class (-062E speed grade) · 1.2 V · 78-FBGA (7.5 x 11 mm)

✓ In Stock

$3.1 / Unit

View Datasheet →

K4A8G085WC-BCRC

✅ Drop-In
Samsung Electronics
📦 FBGA-78
DDR4 SDRAM · 8 Gbit · 1G x 8 · 1.2 V · 2400 Mbps (DDR4-2400) · 78-ball FBGA (TFBGA) · 0.8 mm · Surface Mount

✓ In Stock

$4.3 / Unit

View Datasheet →

H5AN4G8NBJR-UHC Maximum Ratings & Electrical Characteristics

Memory Type DDR4 SDRAM
Density 4 Gbit
Organization 512M x 8
Data Rate 2400 Mbps (PC2400)
Supply Voltage 1.2 V
Interface DDR4 (JEDEC)
Package TFBGA-78 (11 x 7.5 mm)
Mounting Type Surface Mount
Technology CMOS DRAM
Lifecycle Code Active
RoHS Status Compliant (Rohs Code: Yes)
REACH Compliance Compliant
Manufacturer SK Hynix Inc.

H5AN4G8NBJR-UHC tfbga-78 (11 x 7.5 mm) Pin Configuration Guide

Complete pinout information for H5AN4G8NBJR-UHC (tfbga-78 (11 x 7.5 mm) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.

tfbga-78 (11 x 7.5 mm) package pinout diagram for H5AN4G8NBJR-UHC

No detailed pinout data available for H5AN4G8NBJR-UHC.

Refer to the datasheet for full pin configuration.

Safe Operating Area (SOA) & Thermal Characteristics

Safe Operating Area Chart Default safe operating area chart for H5AN4G8NBJR-UHC Drain-to-Source Voltage (Vds) Drain Current (Id)

No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

H5AN4G8NBJR-UHC is suitable for 6 applications: Consumer Main Memory (Desktop/Notebook), Smart TV and Set-Top Box, Networking and Communications Equipment, Embedded x86 and ARM Computing, Gaming and Consumer Electronics Consoles, Industrial Control and IoT Gateways.

🖥️

Consumer Main Memory (Desktop/Notebook)

The H5AN4G8NBJR-UHC is designed primarily for main-memory applications requiring large density and high bandwidth, per the H5AN4GxNBJR series datasheet. As a 4Gb 512M x 8 DDR4 running at 2400 Mbps on a 1.2V rail, eight devices in parallel form a 4GB-wide x64 module channel delivering 19.2 GB/s theoretical bandwidth at PC2400. The JEDEC-standard 78-ball FBGA footprint means module PCBs qualified for one vendor's x8 DDR4 accept this part without layout change. Write leveling, VrefDQ training, and fly-by CA routing per DDR4 design rules are required during board bring-up.

📺

Smart TV and Set-Top Box

Smart TVs and set-top boxes use 4Gb DDR4 x8 components like the H5AN4G8NBJR-UHC as the main working memory for SoC-based video decoding. Its 2400 Mbps data rate provides sufficient bandwidth for 4K video buffering while the 1.2V supply keeps DRAM power within the tight consumer thermal budget of sealed enclosures. The 78-ball TFBGA (11 x 7.5 mm) fits the compact two- or four-chip onboard memory configurations typical of these platforms. The JEDEC-standard x8 ball map allows easy substitution with SK Hynix sibling bins or Micron/Samsung equivalents during cost-down cycles without PCB respin.

🌐

Networking and Communications Equipment

Edge routers, switches, and access points populate 4Gb DDR4 x8 devices such as the H5AN4G8NBJR-UHC as packet-buffer and control-plane memory. The DDR4-2400 interface provides the low-latency, high-bandwidth access that network processors require for deep packet buffering, and multiple x8 devices are ganged to form wider buses matching 32-bit or 64-bit NP/memory-controller data paths. Designers should follow fly-by clock/address routing with on-die termination to preserve signal integrity at 2400 Mbps, and should verify that the selected suffix bin meets the industrial or commercial temperature range required by the enclosure environment.

🏭

Embedded x86 and ARM Computing

Embedded computing platforms - industrial PCs, digital signage players, and ARM server blades - solder down DDR4 x8 components like the H5AN4G8NBJR-UHC directly on the CPU board, avoiding SO-DIMM connectors for reliability and cost. Four devices provide 2 GB of 64-bit DDR4-2400 memory, adequate for lightweight Linux and Windows IoT workloads. Because the 78-ball FBGA ball map is JEDEC-standardized, BOM optimization between SK Hynix, Micron, and Samsung 4Gb x8 parts is possible over the product lifecycle. Memory-controller training parameters (zq calibration, write leveling) should be re-profiled per vendor for margin.

🎮

Gaming and Consumer Electronics Consoles

Game consoles, streaming media players, and arcade systems rely on DDR4 components in the 4Gb x8 class for main system memory where the H5AN4G8NBJR-UHC's 2400 Mbps rate and 512M x 8 organization match the memory-controller configurations of mainstream SoCs. The consumer suffix bin offers attractive cost versus industrial bins, appropriate for climate-controlled consumer environments. Designers exploiting the JEDEC 78-ball footprint can dual-source with Micron MT40A512M8RH-083E or Samsung K4A4G085WD devices to mitigate commodity DRAM allocation cycles without changing the assembly stencil or reflow profile.

🧩

Industrial Control and IoT Gateways

Industrial gateways and control systems use the H5AN4G8NBJR-UHC or its industrial-temperature siblings as main memory for edge-analytics and protocol-conversion workloads. Where ambient temperatures exceed the consumer bin's range, the same-family H5AN4G8NBJR-XNI industrial suffix provides extended temperature capability on the identical 78-ball TFBGA footprint, so one PCB supports both commercial and industrial SKUs. The 1.2V DDR4 rail simplifies power-tree design from 5V or 24V industrial supplies through a single buck converter plus VTT termination regulator. Rerun controller training when interchanging vendors or suffix bins.

What is the H5AN4G8NBJR-UHC?
The H5AN4G8NBJR-UHC is a SK Hynix 4Gb DDR4 SDRAM organized as 512M x 8, operating at a 2400 Mbps data rate from a 1.2V supply. It comes in a 78-ball TFBGA package measuring 11 x 7.5 mm and is intended for consumer and embedded main-memory applications. According to the H5AN4GxNBJR series datasheet, the family is a 4Gb CMOS Double Data Rate IV Synchronous DRAM suited for large-density, high-bandwidth memory subsystems.
What is the price of H5AN4G8NBJR-UHC?
As of 2026-09-04, the H5AN4G8NBJR-UHC is priced from approximately $3.18 to $5.90 per unit depending on quantity and supplier. LCSC lists the part starting at $3.1804, while LCSC/Oscillator-category listings show $5.9039 for single-piece quantities. XAIPART tier pricing starts at $5.90 for qty 1 and drops to $3.18 at qty 1000. Contact XAIPART for volume quotes above 1000 pieces, since DDR4 spot pricing fluctuates with the commodity DRAM market.
Where to buy H5AN4G8NBJR-UHC online?
You can buy the H5AN4G8NBJR-UHC from XAIPART as well as distributors including LCSC, JLCPCB Parts Library, Octopart-listed suppliers, Censtry, Worldway Electronics, and netCOMPONENTS. As of 2026-09-04, LCSC shows stock with pricing from $3.1804, and JLCPCB offers the part (C2927803) for PCB assembly service. Always verify stock and date codes with the supplier, and purchase through authorized channels to avoid remarked or recycled DDR4 components in the gray market.
Is H5AN4G8NBJR-UHC in stock?
Stock availability for the H5AN4G8NBJR-UHC varies by distributor as of 2026-09-04. LCSC reports the part in stock (with a listing showing limited single-piece quantity), and independent distributors such as Censtry and Worldway list it as available for sale with 180-day warranties. XAIPART sources this part on request. For production volumes, request a formal quote and confirm reel date codes, because commodity DDR4 stock rotates quickly and allocated speed grades can carry multi-week lead times.
What is the best drop-in replacement for H5AN4G8NBJR-UHC?
The best drop-in replacements are same-family SK Hynix parts and JEDEC-standard 78-ball FBGA DDR4 x8 4Gb components from other vendors. Same-brand options include H5AN4G8NBJR-RDC and H5AN4G8NBJR-PBC (same footprint, different speed/temp bins). Cross-brand pin-compatible options include the Micron MT40A512M8RH-083E and Samsung K4A4G085WD-BCTD, both 4Gb DDR4 x8 in the JEDEC-standard 78-ball FBGA DDR4 footprint, requiring only controller timing retraining at most.
Can the Micron MT40A512M8RH-083E replace H5AN4G8NBJR-UHC?
Yes, the Micron MT40A512M8RH-083E can replace the H5AN4G8NBJR-UHC on the same PCB in most designs. Both are 4Gb DDR4 SDRAM organized 512M x 8 in the JEDEC-standard 78-ball FBGA footprint. The Micron part is a DDR4-2666-class speed grade, so it meets or exceeds the 2400 Mbps requirement, and the 1.2V supply is identical. After substitution, run the memory controller training sequence again (write leveling, VrefDQ, read training) to accommodate per-vendor timing differences.
H5AN4G8NBJR-UHC vs H5AN4G8NBJR-PBC - which is better for consumer TV main memory?
For consumer TV and set-top-box main memory, both parts are functionally equivalent 4Gb x8 DDR4 in the same 78-ball TFBGA; the difference is the speed-temperature suffix. The -PBC bin and the -UHC bin differ in supported data rate and operating temperature windows per the SK Hynix ordering-code scheme. If your platform runs DDR4-2400 at consumer ambient temperatures, verify both suffix codes against the series datasheet speed-bin table and select the bin that meets your controller timing and derating requirements at the lowest cost.
What is the difference between H5AN4G8NBJR-UHC and H5AN4G8NBJR-RDC?
The H5AN4G8NBJR-UHC and H5AN4G8NBJR-RDC share the same die family, 4Gb 512M x 8 DDR4 organization, and 78-ball TFBGA package; the suffix letters encode the speed grade and operating temperature bin. Per SK Hynix DDR4 ordering-code convention, different letter pairs denote different maximum data rates and/or temperature ranges, so the two parts are pin-compatible and footprint-identical but not timing-identical. Consult the H5AN4GxNBJR series datasheet speed-bin table to confirm the exact CL-tRCD-tRP and data-rate values of each suffix before substituting.
When should I choose H5AN4G8NBJR-UHC over a Micron or Samsung equivalent?
Choose the H5AN4G8NBJR-UHC when your BOM is already qualified on SK Hynix DDR4, when supply-chain diversification favors a second SK Hynix source, or when contract manufacturing (such as JLCPCB, which stocks C2927803) makes it the lowest-friction option. Choose Micron or Samsung equivalents when their regional stock or pricing is stronger. Electrically, all three are JEDEC-standard DDR4 4Gb x8 78-ball FBGA parts, so the choice is primarily a sourcing and qualification-cost decision rather than a technical one.
Is the H5AN4G8NBJR-UHC suitable for industrial applications?
The H5AN4G8NBJR-UHC is a consumer-grade DDR4 component, so its suitability for industrial use depends on the operating temperature requirement. For extended-temperature industrial systems (beyond the consumer ambient range), SK Hynix offers industrial-temperature suffix variants in the same H5AN4G8NBJR family (the xxI grade appears in the series datasheet). If your environment exceeds consumer limits, select the industrial suffix variant in the same 78-ball TFBGA footprint rather than forcing this consumer part, and derate refresh rates accordingly per the datasheet.
Where to download the H5AN4G8NBJR-UHC datasheet PDF?
The H5AN4G8NBJR-UHC datasheet PDF (Consumer DDR4 H5AN4G4/8/6NBJR series, Rev 1.7) is freely available via DigiKey's datasheet repository and linked from XAIPART's product page. Distributors LCSC, JLCPCB, and Octopart also provide datasheet access. The series datasheet covers the H5AN4G4NBJR-xxC, H5AN4G8NBJR-xxC, and H5AN4G6NBJR-xxC consumer DDR4 family including AC/DC timing tables, ball descriptions, and package mechanical drawings for the 78-ball TFBGA.
What are the key specifications of H5AN4G8NBJR-UHC engineers should know?
Key specifications: 4Gbit density in 512M x 8 organization; DDR4 SDRAM interface running at 2400 Mbps (PC2400) data rate; 1.2V core supply per the JEDEC DDR4 standard; 78-ball TFBGA package (11 x 7.5 mm) with JEDEC-standard DDR4 x8 ball map; CMOS DRAM technology; RoHS-compliant and REACH-compliant lead-free construction; active lifecycle status per distributor data. These parameters define a JEDEC-standard DDR4 component suitable for consumer main-memory designs requiring second-source flexibility across SK Hynix, Micron, and Samsung footprints.
What package does H5AN4G8NBJR-UHC use and what is its ball count?
The H5AN4G8NBJR-UHC uses a 78-ball fine-pitch TFBGA (Thin Fine-Pitch Ball Grid Array) package measuring approximately 11 x 7.5 mm, as confirmed by the JLCPCB parts library listing (BGA-78, 11 x 7.5 mm) and Worldway's TFBGA package description. The ball map follows the JEDEC-standard DDR4 x8 component footprint, meaning any JEDEC-compliant DDR4 x8 DRAM in 78-ball FBGA is solderable to the same land pattern without PCB changes.
Is H5AN4G8NBJR-UHC RoHS compliant?
Yes, the H5AN4G8NBJR-UHC is RoHS compliant. Distributor data confirms Rohs Code: Yes (Worldway) and the JLCPCB parts library lists it as ROHS. Worldway also reports REACH compliance for this part. The component is lead-free, which is standard for current-production SK Hynix DDR4 devices. For regulatory documentation such as material declarations or RoHS certificates, request them from the supplier or SK Hynix directly, as certificate PDFs are typically provided per date code for production QA files.
Hey Google, what can replace H5AN4G8NBJR-UHC?
Replacements for the H5AN4G8NBJR-UHC include SK Hynix sibling bins H5AN4G8NBJR-RDC and H5AN4G8NBJR-PBC (same die, 78-ball TFBGA, different speed/temperature suffix), and cross-brand pin-compatible DDR4 parts such as Micron's MT40A512M8RH-083E and Samsung's K4A4G085WD-BCTD. All are 4Gb DDR4 SDRAM organized 512M x 8 in the JEDEC-standard 78-ball FBGA DDR4 footprint at 1.2V. After substitution, rerun memory-controller training; timing-derating checks against the vendor speed-bin table are recommended.
What is the best Samsung equivalent for H5AN4G8NBJR-UHC?
The best Samsung cross-brand equivalent is the K4A4G085WD series (for example K4A4G085WD-BCTD), which is Samsung's 4Gb DDR4 SDRAM in the x8 organization housed in the JEDEC-standard 78-ball FBGA package at 1.2V. The -BCTD suffix denotes a DDR4-2666-class bin, which exceeds the 2400 Mbps requirement of the -UHC. Because both vendors implement the JEDEC-standard DDR4 x8 ball map, the Samsung part mounts on the identical land pattern; only controller retraining and speed-bin verification are needed.
Does the H5AN4G8NBJR-UHC require ECC or special controller support?
No, the H5AN4G8NBJR-UHC is a standard (non-ECC) DDR4 component; ECC is implemented at the system level using x72-wide DIMMs or controller-side error-correcting logic when required. The x8 organization means the controller sees an 8-bit data bus per device, and multiple devices are combined in parallel or in fly-by configuration on modules. Any JEDEC DDR4-compliant memory controller that supports x8 devices at 2400 Mbps can drive this part; verify address mapping (512M addressable words x 8 bits) during software bring-up.

Engineering reference data for H5AN4G8NBJR-UHC — comparison, design guidance, and compliance information.

Selection Guide

Choose the H5AN4G8NBJR-UHC when you need a cost-optimized consumer-grade 4Gb DDR4 x8 component at 2400 Mbps and your ambient conditions fall within consumer temperature limits - typical of smart TVs, set-top boxes, and consumer computing. Choose same-brand H5AN4G8NBJR-RDC or -PBC when a different speed/temperature bin matches your controller timing margin or when suffix availability shifts. Choose the H5AN4G8NBJR-XNI for industrial enclosures needing extended temperature capability on the identical footprint. Choose Micron MT40A512M8RH-083E or Samsung K4A4G085WD-BCTD when cross-brand second sourcing is required - both mount on the same JEDEC 78-ball DDR4 land pattern, though controller retraining and speed-bin re-verification are mandatory. Use denser 8Gb equivalents (MT40A1G8AG-062E, K4A8G085WC-BCRC) only when doubling memory per footprint justifies the premium and the controller supports the changed row-address mapping.

Comparison with Alternatives

Parameter This Product H5AN4G8NBJR-RDC H5AN4G8NBJR-XNI MT40A512M8RH-083E K4A4G085WD-BCTD MT40A1G8AG-062E
Package TFBGA-78 (11 x 7.5 mm) TFBGA-78 - same TFBGA-78 - same FBGA-78 - same JEDEC footprint FBGA-78 - same JEDEC footprint FBGA-78 - same JEDEC footprint
Brand SK Hynix SK Hynix SK Hynix Micron Technology Samsung Electronics Micron Technology
Density 4 Gbit 4 Gbit 4 Gbit 4 Gbit 4 Gbit 8 Gbit (2x)
Organization 512M x 8 512M x 8 512M x 8 512M x 8 512M x 8 1G x 8
Data Rate 2400 Mbps (PC2400) [DATA_NEEDED: per suffix bin] [DATA_NEEDED: per suffix bin] DDR4-2666 class (083E = CL19 @ 2666) DDR4-2666 class DDR4-3200 class
Supply Voltage 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V
Temperature Grade Consumer bin [DATA_NEEDED: per suffix bin] Industrial-capable suffix (xxI grade) [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED]
RoHS Compliance Compliant Compliant Compliant Compliant Compliant Compliant

Key Differentiators

  • Cost-optimized consumer bin for high-volume builds (vs H5AN4G8NBJR-XNI)
  • Cross-brand second-source availability (vs MT40A512M8RH-083E)
  • Balanced density-bandwidth point (vs MT40A1G8AG-062E)

Design Notes

For DDR4-2400 operation with the H5AN4G8NBJR-UHC, route command/address/control lines in fly-by topology with on-die termination (RTT_NOM/RTT_WR) enabled, and length-match data groups per byte lane to within +/-25 mil skew (estimated; follow your controller's layout guideline, e.g., Intel/AMD DDR4 routing rules). Use ODT settings from the controller training algorithm rather than fixed values. Keep DQ/DM/DQS traces on an unbroken reference plane; the 78-ball TFBGA breakout typically requires 4 or more layers with dedicated VDDQ (1.2V) and VTT planes.

The device operates from a 1.2V VDD/VDDQ supply; VTT termination (roughly 0.6V, half of VDDQ) requires a dedicated sinking/sourcing LDO such as a VTT terminator sized for termination currents during bus turnaround. Estimated: an 8-device x8 DDR4-2400 bus can demand several amps of transient VTT current, so select the VTT regulator for peak, not average, load. Decouple each ball-group with at least one 0.1 uF ceramic capacitor plus bulk 22-47 uF per device, placed close to the VDD balls.

Do not interchange suffix bins (-UHC vs -PBC vs -RDC) without verifying the speed-bin timing table in the H5AN4GxNBJR series datasheet: CAS Latency, tRCD, tRP, and supported data rates differ by suffix. After any vendor or bin substitution (e.g., swapping in Micron MT40A512M8RH-083E), rerun full memory training - write leveling, read training, VrefDQ - because per-vendor DQ timing skews differ. Also confirm the address mapping (512M x 8) matches controller row/column/bank configuration; a denser 8Gb drop-in changes row addresses.

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Not Applicable
Lead Free
Yes
Halogen Free
Unknown
Conflict Minerals
Unknown

Rohs Code: Yes and REACH compliance reported by Worldway distributor data; JLCPCB lists the part as ROHS. AEC-Q100 qualification not stated - this is a consumer DDR4 series.

Data verified on: 2026-09-04 — data verified and curated by XAIPART's component engineering team

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Related Components & Terms

SK Hynix H5AN4G8NBJR-UHC H5AN4G8NBJR-RDC H5AN4G8NBJR-PBC H5AN4G8NBJR-XNI MT40A512M8RH-083E K4A4G085WD-BCTD DDR4 SDRAM DRAM JEDEC DDR4 standard TFBGA-78 FBGA RoHS REACH 512M x 8 1.2 V VDDQ 2400 Mbps PC2400 on-die termination write leveling fly-by topology main memory set-top box consumer electronics
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