H5AN4G8NBJR-UHC - 4Gb DDR4 SDRAM 2400, 1.2V | SK Hynix
MPN: H5AN4G8NBJR-UHC ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $5.9 | $5.90 |
| 10 | $5.31 | $53.10 |
| 100 | $4.75 | $475.00 |
| 500 | $4.02 | $2,010.00 |
| 1,000 | $3.18 | $3,180.00 |
Drop-in alternatives for H5AN4G8NBJR-UHC — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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H5AN4G8NBJR-RDC
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View Datasheet →H5AN4G8NBJR-PBC
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View Datasheet →H5AN4G8NBJR-XNI
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MT40A512M8RH-083E
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View Datasheet →H5AN4G8NBJR-UHC Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Density | 4 Gbit |
| Organization | 512M x 8 |
| Data Rate | 2400 Mbps (PC2400) |
| Supply Voltage | 1.2 V |
| Interface | DDR4 (JEDEC) |
| Package | TFBGA-78 (11 x 7.5 mm) |
| Mounting Type | Surface Mount |
| Technology | CMOS DRAM |
| Lifecycle Code | Active |
| RoHS Status | Compliant (Rohs Code: Yes) |
| REACH Compliance | Compliant |
| Manufacturer | SK Hynix Inc. |
H5AN4G8NBJR-UHC tfbga-78 (11 x 7.5 mm) Pin Configuration Guide
Complete pinout information for H5AN4G8NBJR-UHC (tfbga-78 (11 x 7.5 mm) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for H5AN4G8NBJR-UHC.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
H5AN4G8NBJR-UHC is suitable for 6 applications: Consumer Main Memory (Desktop/Notebook), Smart TV and Set-Top Box, Networking and Communications Equipment, Embedded x86 and ARM Computing, Gaming and Consumer Electronics Consoles, Industrial Control and IoT Gateways.
Consumer Main Memory (Desktop/Notebook)
The H5AN4G8NBJR-UHC is designed primarily for main-memory applications requiring large density and high bandwidth, per the H5AN4GxNBJR series datasheet. As a 4Gb 512M x 8 DDR4 running at 2400 Mbps on a 1.2V rail, eight devices in parallel form a 4GB-wide x64 module channel delivering 19.2 GB/s theoretical bandwidth at PC2400. The JEDEC-standard 78-ball FBGA footprint means module PCBs qualified for one vendor's x8 DDR4 accept this part without layout change. Write leveling, VrefDQ training, and fly-by CA routing per DDR4 design rules are required during board bring-up.
Recommended
Smart TV and Set-Top Box
Smart TVs and set-top boxes use 4Gb DDR4 x8 components like the H5AN4G8NBJR-UHC as the main working memory for SoC-based video decoding. Its 2400 Mbps data rate provides sufficient bandwidth for 4K video buffering while the 1.2V supply keeps DRAM power within the tight consumer thermal budget of sealed enclosures. The 78-ball TFBGA (11 x 7.5 mm) fits the compact two- or four-chip onboard memory configurations typical of these platforms. The JEDEC-standard x8 ball map allows easy substitution with SK Hynix sibling bins or Micron/Samsung equivalents during cost-down cycles without PCB respin.
Recommended
Networking and Communications Equipment
Edge routers, switches, and access points populate 4Gb DDR4 x8 devices such as the H5AN4G8NBJR-UHC as packet-buffer and control-plane memory. The DDR4-2400 interface provides the low-latency, high-bandwidth access that network processors require for deep packet buffering, and multiple x8 devices are ganged to form wider buses matching 32-bit or 64-bit NP/memory-controller data paths. Designers should follow fly-by clock/address routing with on-die termination to preserve signal integrity at 2400 Mbps, and should verify that the selected suffix bin meets the industrial or commercial temperature range required by the enclosure environment.
Recommended
Embedded x86 and ARM Computing
Embedded computing platforms - industrial PCs, digital signage players, and ARM server blades - solder down DDR4 x8 components like the H5AN4G8NBJR-UHC directly on the CPU board, avoiding SO-DIMM connectors for reliability and cost. Four devices provide 2 GB of 64-bit DDR4-2400 memory, adequate for lightweight Linux and Windows IoT workloads. Because the 78-ball FBGA ball map is JEDEC-standardized, BOM optimization between SK Hynix, Micron, and Samsung 4Gb x8 parts is possible over the product lifecycle. Memory-controller training parameters (zq calibration, write leveling) should be re-profiled per vendor for margin.
Recommended
Gaming and Consumer Electronics Consoles
Game consoles, streaming media players, and arcade systems rely on DDR4 components in the 4Gb x8 class for main system memory where the H5AN4G8NBJR-UHC's 2400 Mbps rate and 512M x 8 organization match the memory-controller configurations of mainstream SoCs. The consumer suffix bin offers attractive cost versus industrial bins, appropriate for climate-controlled consumer environments. Designers exploiting the JEDEC 78-ball footprint can dual-source with Micron MT40A512M8RH-083E or Samsung K4A4G085WD devices to mitigate commodity DRAM allocation cycles without changing the assembly stencil or reflow profile.
Recommended
Industrial Control and IoT Gateways
Industrial gateways and control systems use the H5AN4G8NBJR-UHC or its industrial-temperature siblings as main memory for edge-analytics and protocol-conversion workloads. Where ambient temperatures exceed the consumer bin's range, the same-family H5AN4G8NBJR-XNI industrial suffix provides extended temperature capability on the identical 78-ball TFBGA footprint, so one PCB supports both commercial and industrial SKUs. The 1.2V DDR4 rail simplifies power-tree design from 5V or 24V industrial supplies through a single buck converter plus VTT termination regulator. Rerun controller training when interchanging vendors or suffix bins.
Recommended
Recommended Products Summary
Engineering reference data for H5AN4G8NBJR-UHC — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | H5AN4G8NBJR-RDC | H5AN4G8NBJR-XNI | MT40A512M8RH-083E | K4A4G085WD-BCTD | MT40A1G8AG-062E |
|---|---|---|---|---|---|---|
| Package | TFBGA-78 (11 x 7.5 mm) | TFBGA-78 - same | TFBGA-78 - same | FBGA-78 - same JEDEC footprint | FBGA-78 - same JEDEC footprint | FBGA-78 - same JEDEC footprint |
| Brand | SK Hynix | SK Hynix | SK Hynix | Micron Technology | Samsung Electronics | Micron Technology |
| Density | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 8 Gbit (2x) |
| Organization | 512M x 8 | 512M x 8 | 512M x 8 | 512M x 8 | 512M x 8 | 1G x 8 |
| Data Rate | 2400 Mbps (PC2400) | [DATA_NEEDED: per suffix bin] | [DATA_NEEDED: per suffix bin] | DDR4-2666 class (083E = CL19 @ 2666) | DDR4-2666 class | DDR4-3200 class |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Temperature Grade | Consumer bin | [DATA_NEEDED: per suffix bin] | Industrial-capable suffix (xxI grade) | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| RoHS Compliance | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Key Differentiators
- Cost-optimized consumer bin for high-volume builds (vs H5AN4G8NBJR-XNI)
- Cross-brand second-source availability (vs MT40A512M8RH-083E)
- Balanced density-bandwidth point (vs MT40A1G8AG-062E)
Design Notes
For DDR4-2400 operation with the H5AN4G8NBJR-UHC, route command/address/control lines in fly-by topology with on-die termination (RTT_NOM/RTT_WR) enabled, and length-match data groups per byte lane to within +/-25 mil skew (estimated; follow your controller's layout guideline, e.g., Intel/AMD DDR4 routing rules). Use ODT settings from the controller training algorithm rather than fixed values. Keep DQ/DM/DQS traces on an unbroken reference plane; the 78-ball TFBGA breakout typically requires 4 or more layers with dedicated VDDQ (1.2V) and VTT planes.
The device operates from a 1.2V VDD/VDDQ supply; VTT termination (roughly 0.6V, half of VDDQ) requires a dedicated sinking/sourcing LDO such as a VTT terminator sized for termination currents during bus turnaround. Estimated: an 8-device x8 DDR4-2400 bus can demand several amps of transient VTT current, so select the VTT regulator for peak, not average, load. Decouple each ball-group with at least one 0.1 uF ceramic capacitor plus bulk 22-47 uF per device, placed close to the VDD balls.
Do not interchange suffix bins (-UHC vs -PBC vs -RDC) without verifying the speed-bin timing table in the H5AN4GxNBJR series datasheet: CAS Latency, tRCD, tRP, and supported data rates differ by suffix. After any vendor or bin substitution (e.g., swapping in Micron MT40A512M8RH-083E), rerun full memory training - write leveling, read training, VrefDQ - because per-vendor DQ timing skews differ. Also confirm the address mapping (512M x 8) matches controller row/column/bank configuration; a denser 8Gb drop-in changes row addresses.
Compliance Information
Rohs Code: Yes and REACH compliance reported by Worldway distributor data; JLCPCB lists the part as ROHS. AEC-Q100 qualification not stated - this is a consumer DDR4 series.