H5AN8G6NAFR-PBC vs H5AN8G6NDJR Comparison
Detailed side-by-side comparison of H5AN8G6NAFR-PBC by SK hynix and H5AN8G6NDJR by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5AN8G6NAFR-PBC | H5AN8G6NDJR |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.55 | $35.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gb |
| Organization | 512M x 16 | 512M x 16 |
| VDD Supply Voltage | 1.20 V +/- 0.06 V | — |
| VDDQ Supply Voltage | 1.20 V +/- 0.06 V | — |
| VPP Supply Voltage | 2.5 V +0.25/-0.125 V | — |
| Interface Type | DDR4 (parallel, double data rate) | — |
| Speed Bins Supported | DDR4-1600 / 1866 / 2133 / 2400 (datasheet speed bin tables) | — |
| Refresh | Auto / Self Refresh | — |
| DLL | DLL ON mode for speed bin operation | — |
| Clock | Differential clock (CK/CK#) | — |
| Package | TFBGA-96 (rectangular) | 96-ball FBGA (13mm x 7.5mm) |
| Number of Terminals | 96 | 96 |
| Mounting Type | Surface Mount | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | — |
| RoHS Status | Compliant (Lead-Free & Halogen-Free) | — |
| Composition | CMOS | — |
| Data Rate | — | 3200 Mbps (DDR4-3200) |
| Supply Voltage | — | 1.2 V |
| Maximum Supply Voltage (Vsup) | — | 1.26 V |
| Maximum Operating Temperature | — | 85 °C |
| Burst Length | — | 8 (BL8), 4 (BC4) |
| CAS Latency | — | 22 cycles (at 3200 Mbps) |
| Access Mode | — | Multi Bank Page Burst |
| JESD-30 Code | — | R-PBGA-B96 |
| RoHS | — | Compliant |
| Features | — | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |