H5AN8G6NAFR-PBC - 8Gb DDR4 SDRAM 1.2V TFBGA-96 | SK hynix
MPN: H5AN8G6NAFR-PBC ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.85 | $4.85 |
| 10 | $4.55 | $45.50 |
| 100 | $4.15 | $415.00 |
| 500 | $3.85 | $1,925.00 |
| 1,000 | $3.55 | $3,550.00 |
Drop-in alternatives for H5AN8G6NAFR-PBC — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →H5AN8G8NAFR-PBC
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View Datasheet →H5AN8G6NAFR-PBC Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Density | 8 Gbit |
| Organization | 512M x 16 |
| VDD Supply Voltage | 1.20 V +/- 0.06 V |
| VDDQ Supply Voltage | 1.20 V +/- 0.06 V |
| VPP Supply Voltage | 2.5 V +0.25/-0.125 V |
| Interface Type | DDR4 (parallel, double data rate) |
| Speed Bins Supported | DDR4-1600 / 1866 / 2133 / 2400 (datasheet speed bin tables) |
| Refresh | Auto / Self Refresh |
| DLL | DLL ON mode for speed bin operation |
| Clock | Differential clock (CK/CK#) |
| Package | TFBGA-96 (rectangular) |
| Number of Terminals | 96 |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant (Lead-Free & Halogen-Free) |
| Composition | CMOS |
H5AN8G6NAFR-PBC tfbga-96 (rectangular) Pin Configuration Guide
Complete pinout information for H5AN8G6NAFR-PBC (tfbga-96 (rectangular) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for H5AN8G6NAFR-PBC.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
H5AN8G6NAFR-PBC is suitable for 6 applications: Embedded Main Memory for Industrial PCs, Networking and Telecom Equipment, Set-Top Boxes and Smart TV Platforms, Automotive Infotainment and Displays, Test and Measurement Instrumentation, Edge AI and Vision Modules.
Embedded Main Memory for Industrial PCs
The H5AN8G6NAFR-PBC provides 8Gb of DDR4 main memory per device for industrial PCs, HMI panels, and edge controllers running memory-hungry Linux or real-time workloads. Its 512M x16 organization lets two devices form a 32-bit channel or four devices a 64-bit channel, minimizing component count versus x8 alternatives. The 1.2V VDD/VDDQ interface cuts I/O power roughly 20% versus DDR3 at comparable bandwidth, reducing thermal load in fanless enclosures, while auto/self-refresh supports Suspend-to-RAM power strategies. Its RoHS-compliant, lead-free and halogen-free construction fits standard industrial qualification flows, and the DDR4-1600 to 2400 speed-bin range lets one PCB cover multiple CPU performance tiers by changing only firmware training tables.
Recommended
Networking and Telecom Equipment
Routers, switches, and 5G small-cell platforms require large packet buffers and high memory bandwidth; the H5AN8G6NAFR-PBC's 8Gb density and up to DDR4-2400 data rate supply the throughput for line-rate packet processing. The x16 organization suits 16-bit and 32-bit control-plane memory buses common in network processors and ARM-based management CPUs. DLL-on operation and bank-group timing support dense command streams typical of buffer management, while per-byte DM masks simplify store-and-forward buffer implementations. Because telecom racks demand long service life, dual-sourcing with Micron's MT40A512M16JY-075E on the same 96-ball footprint protects against DRAM supply cycles without PCB respin, and the 1.2V interface lowers per-device power across the dozens of DRAMs in a chassis.
Recommended
Set-Top Boxes and Smart TV Platforms
Media-soC set-top boxes and smart TVs typically use 32-bit DDR4 channels; a pair of H5AN8G6NAFR-PBC devices delivers 2 GB of main memory for 4K video decoding, graphics, and applications. The x16 organization matches these SoC memory controllers directly, and the 1.2V interface reduces total platform power - important in always-on consumer devices subject to energy regulations. Auto/self-refresh enables low-power standby states needed for instant-on user experiences. Because consumer BOMs are cost-driven, the shared 96-ball footprint with SK hynix's H5AN8G6NAFR-UHC and newer CJR/DJR dies allows procurement to migrate across grades and generations with no PCB change, protecting production continuity through DRAM market fluctuations.
Recommended
Automotive Infotainment and Displays
Digital cockpits and infotainment SoCs use DDR4 DRAM for graphics buffers and navigation databases; the H5AN8G6NAFR-PBC's 8Gb capacity supports multi-display rendering pipelines. Two x16 devices on a 32-bit channel provide 2 GB with bandwidth up to the DDR4-2400 bin, sufficient for HD map rendering and rear-seat streaming. The 1.2V rail simplifies integration with automotive PMIC DDR4 rails, and the separate 2.5V VPP input matches standard automotive DDR4 power architectures. For qualification, engineers should confirm the operating temperature grade for the specific suffix and consider SK hynix automotive-grade DDR4 variants where AEC-Q100 alignment is required, using the shared F-package footprint to keep the design portable across grades.
Recommended
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and protocol analyzers capture large waveform datasets into main memory; the H5AN8G6NAFR-PBC's 8Gb density per device supports deep-capture memory pools of 4-16 GB built from a handful of components. A 64-bit channel of four x16 devices achieves high sustained bandwidth for streaming acquisition data, while the 1.2V DDR4 interface and self-refresh mode manage instrument power budgets in portable formats. Deterministic initialization via RESET# and standard JEDEC mode-register programming eases bring-up on FPGA or ASIC memory controllers. Instruments benefit from dual-sourcing on the same footprint - qualifying both this SK hynix device and Micron's MT40A512M16JY-075E protects long-lifecycle product lines against DRAM end-of-life and allocation cycles.
Recommended
Edge AI and Vision Modules
Edge AI accelerator modules and smart-camera SoCs need 1-4 GB of DDR4 for model weights, frame buffers, and intermediate feature maps; a 32-bit channel built from two H5AN8G6NAFR-PBC devices provides 2 GB at up to DDR4-2400 bandwidth, feeding CNN inference pipelines at the frame rates vision workloads demand. The x16 organization matches typical vision-SoC controllers, and the compact 96-ball TFBGA fits the tight module footprints of M.2 and SO-DIMM-style edge compute cards. Auto/self-refresh supports aggressive duty-cycling in battery-powered cameras, while RoHS-compliant lead-free construction meets global IoT product compliance. The shared footprint with CJR/DJR successor dies gives module vendors a longevity path without layout changes.
Recommended
Recommended Products Summary
Engineering reference data for H5AN8G6NAFR-PBC — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | H5AN8G6NAFR-UHC | H5AN8G6NCJR-VKC | H5AN8G6NDJR | MT40A512M16JY-075E | H5AN8G8NAFR-PBC |
|---|---|---|---|---|---|---|
| Package | TFBGA-96 | TFBGA-96 - same | TFBGA-96 - same | TFBGA-96 - same | FBGA-96 - same footprint class | TFBGA-96 - same |
| Brand | SK hynix | SK hynix | SK hynix | SK hynix | Micron Technology | SK hynix |
| Density | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 1G x 8 |
| VDD/VDDQ | 1.20 V +/- 0.06 V | 1.20 V | 1.20 V | 1.20 V | 1.20 V | 1.20 V |
| Data Rate Class | DDR4-1600 to 2400 bins (datasheet) | [DATA_NEEDED: speed bin for -UHC suffix] | [DATA_NEEDED: speed bin for CJR die] | [DATA_NEEDED: speed bin for DJR die] | 2400-class (-075E, 0.75 ns) | Same -PBC grade family |
| Refresh | Auto / Self Refresh | Auto / Self Refresh | Auto / Self Refresh | Auto / Self Refresh | Auto / Self Refresh | Auto / Self Refresh |
| RoHS / Halogen-Free | Compliant / Yes | Compliant / Yes | Compliant / Yes | Compliant / Yes | Compliant / Yes | Compliant / Yes |
Key Differentiators
- x16 organization halves device count per bus (vs H5AN8G8NAFR-PBC)
- Full datasheet-documented speed-bin range (vs H5AN8G6NAFR-UHC)
- Dual-source continuity on one footprint (vs MT40A512M16JY-075E)
Design Notes
Provide three rails for the H5AN8G6NAFR-PBC: VDD and VDDQ at 1.20V +/- 0.06V and VPP at 2.5V +0.25/-0.125V, per the datasheet absolute ratings (Rev. 1.2, Jul. 2017). Sequence VPP on together with or before VDD to avoid unpowered wordline-bias stress. VPP draws little dynamic current but must stay regulated; VDDQ sees bursty I/O current, so bulk plus high-frequency ceramic decoupling near each device is mandatory. Use a DDR4-capable PMIC with VTT termination tracking (VDDQ/2) for the address/command bus.
Route DDR4 in fly-by topology for CK/CK#, CKE, CS#, RAS#/CAS#/WE#, ODT, and CA[5:0], with series-damped termination to VTT; keep CA skew within the controller's spec. Match DQ[15:0], DQS/DQS#, and DM per byte lane within +/- 5 mils and control impedance to 40-50 ohms single-ended. Both speed bin tables in the datasheet are valid only with DLL ON and Geardown Mode disabled, so confirm controller mode-register settings match the layout's target bin. Follow the ballout table in the SK hynix datasheet exactly; do not mirror the footprint from a x8 device without verification.
When substituting speed grades (for example H5AN8G6NAFR-UHC in place of -PBC, or cross-brand MT40A512M16JY-075E), do not assume one firmware training profile fits all: each grade and die generation (CJR/DJR vs the original AFR) has different CL/CWL, tRFC, and ODT optima. Re-run read/write leveling and verify at temperature extremes. Also note the datasheet reserves the right to change products or specifications without notice - re-verify PCN/EOL status periodically and qualify a second source to de-risk commodity DRAM allocation cycles.
Compliance Information
Datasheet description states Lead-Free & Halogen-Free (RoHS Compliant) for the H5AN8G6NAFR-PBC. REACH and conflict-minerals status not stated in provided data.
