H5AN8G6NDJR vs H5AN8G6NDJR-XNC Comparison
Detailed side-by-side comparison of H5AN8G6NDJR by SK hynix and H5AN8G6NDJR-XNC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5AN8G6NDJR | H5AN8G6NDJR-XNC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $35.00 | $55.68 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | β |
| Organization | 512M x 16 | β |
| Data Rate | 3200 Mbps (DDR4-3200) | 3200 Mbps |
| Supply Voltage | 1.2 V | β |
| Package | 96-ball FBGA (13mm x 7.5mm) | FBGA-96 (13x7.5 mm) |
| Number of Terminals | 96 | 96 |
| Maximum Supply Voltage (Vsup) | 1.26 V | β |
| Maximum Operating Temperature | 85 Β°C | 85 Β°C |
| Burst Length | 8 (BL8), 4 (BC4) | β |
| CAS Latency | 22 cycles (at 3200 Mbps) | β |
| Access Mode | Multi Bank Page Burst | β |
| JESD-30 Code | R-PBGA-B96 | β |
| RoHS | Compliant | Compliant |
| Features | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling | β |
| Memory Size | β | 8 Gb |
| Memory Organization | β | 512M x16 |
| Supply Voltage (VDD) | β | 1.2 V (max 1.26 V) |
| Input/Output Type | β | COMMON |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes |
| Auto Self-Refresh | β | Yes |
| Auto Precharge | β | Yes |
| Data Mask | β | Yes |
| Dynamic On-Chip Termination | β | Yes |
| ZQ Calibration | β | Yes |
| CRC Function | β | Yes |
| Write Leveling | β | Yes |
| Asynchronous Reset | β | Yes |