H5AN8G6NDJR vs H5AN8G6NDJR-XNC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci H5AN8G6NDJR disebabkan oleh SK hynix dan H5AN8G6NDJR-XNC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | H5AN8G6NDJR | H5AN8G6NDJR-XNC |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $55.68 |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organisasi | 512M x 16 | — |
| Kadar Data | 3200 Mbps (DDR4-3200) | 3200 Mbps |
| Tegangan Pemberi Arus | 1.2 V | — |
| Kemasan | 96-ball FBGA (13mm x 7.5mm) | FBGA-96 (13x7.5 mm) |
| Number of Terminals | 96 | 96 |
| Maximum Supply Voltage (Vsup) | 1.26 V | — |
| Maximum Operating Temperature | 85 °C | 85 °C |
| Burst Length | 8 (BL8), 4 (BC4) | — |
| Latensi CAS | 22 cycles (at 3200 Mbps) | — |
| Access Mode | Multi Bank Page Burst | — |
| JESD-30 Code | R-PBGA-B96 | — |
| RoHS | Compliant | Compliant |
| Ciri-ciri | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling | — |
| Saiz Ingatan | — | 8 Gb |
| Memory Organization | — | 512M x16 |
| Supply Voltage (VDD) | — | 1.2 V (max 1.26 V) |
| Input/Output Type | — | COMMON |
| Lead-Free | — | Yes |
| Boson Bebas | — | Yes |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Data Mask | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |
| CRC Function | — | Yes |
| Write Leveling | — | Yes |
| Asynchronous Reset | — | Yes |