H5AN8G6NDJR vs MT40A512M16TB-062E:R Comparison
Detailed side-by-side comparison of H5AN8G6NDJR by SK hynix and MT40A512M16TB-062E:R by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT40A512M16TB-062E:R
MT40A512M16TB-062E:R - 8Gb DDR4 SDRAM 3200MT/s | Micron
MT40A512M16TB-062E:R β ActiveSpecification Comparison
| Parameter | H5AN8G6NDJR | MT40A512M16TB-062E:R |
|---|---|---|
| Brand | SK hynix | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $35.00 | $60.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | β |
| Organization | 512M x 16 | β |
| Data Rate | 3200 Mbps (DDR4-3200) | 3200 MT/s |
| Supply Voltage | 1.2 V | β |
| Package | 96-ball FBGA (13mm x 7.5mm) | 96-FBGA (7.5x13 mm) |
| Number of Terminals | 96 | β |
| Maximum Supply Voltage (Vsup) | 1.26 V | β |
| Maximum Operating Temperature | 85 Β°C | β |
| Burst Length | 8 (BL8), 4 (BC4) | β |
| CAS Latency | 22 cycles (at 3200 Mbps) | 22 |
| Access Mode | Multi Bank Page Burst | β |
| JESD-30 Code | R-PBGA-B96 | β |
| RoHS | Compliant | β |
| Features | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling | Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration |
| Memory Size | β | 8 Gbit (512M x 16) |
| Clock Frequency | β | 1600 MHz |
| Supply Voltage (VDD/VDDQ) | β | 1.2V Β±60mV |
| VPP Voltage | β | 2.5V (-125mV, +250mV) |
| Operating Temperature | β | 0Β°C to +95Β°C |
| Interface | β | Parallel |
| Data Bus Width | β | 16 bits |
| Refresh Time | β | 8192 cycles (64ms at -40Β°C to 85Β°C, 32ms at >85Β°C to 95Β°C, 16ms at >95Β°C) |
| I/O Type | β | 1.2V pseudo open-drain |
| RoHS Status | β | Compliant |