H5AN8G8NAFR-VKC vs H5AN8G4NAFR-VKC Comparison

Detailed side-by-side comparison of H5AN8G8NAFR-VKC by SK hynix and H5AN8G4NAFR-VKC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5AN8G8NAFR-VKC H5AN8G8NAFR-VKC - 8Gb DDR4-2666 SDRAM 1.2V | SK hynix

H5AN8G8NAFR-VKC - 8Gb DDR4-2666 SDRAM 1.2V | SK hynix

H5AN8G8NAFR-VKC ✓ Active
SK hynix
H5AN8G4NAFR-VKC H5AN8G4NAFR-VKC - 8Gb DDR4-2666 SDRAM 2Gx4 | SK hynix

H5AN8G4NAFR-VKC - 8Gb DDR4-2666 SDRAM 2Gx4 | SK hynix

H5AN8G4NAFR-VKC ✓ Active

Specification Comparison

Parameter H5AN8G8NAFR-VKC H5AN8G4NAFR-VKC
Brand SK hynix SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $4.15 $2.98
Memory Type DDR4 SDRAM DDR4 SDRAM
Density 8 Gb 8 Gb
Organization 1G x 8 2G x 4
Speed Grade DDR4-2666 (VKC bin) —
Supply Voltage (VDD) 1.2 V 1.2 V
Interface SSTL12 —
Burst Length 8 (BL8) —
Bank Group Architecture Supported (per DDR4 JEDEC architecture) —
On-Die Termination (ODT) Yes —
DLL Yes (DLL for output skew control) —
Package 78-ball FBGA 78-ball FBGA (PBGA78)
Mounting Type Surface Mount Surface Mount
Operating Temperature [DATA_NEEDED: operating temperature range] [DATA_NEEDED: Operating Temperature]
RoHS Status Compliant (Lead-Free & Halogen-Free) Compliant (Lead-Free & Halogen-Free)
Process Technology CMOS —
Recommended Application Main memory requiring large density and high bandwidth —
Data Rate — 2666 Mbps per pin (DDR4-2666)
CAS Latency (CL) — 19 (CL19, speed bin VK)
I/O Voltage (VDDQ) — 1.2 V
Technology — CMOS
Family — H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC
Application — Main memory requiring large density and high bandwidth
Datasheet Revision — Rev. 1.2 (Jul. 2017)
Refresh — [DATA_NEEDED: Refresh specification]

Datasheets & Resources

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