SK hynix

H5AN8G4NAFR-VKC - 8Gb DDR4-2666 SDRAM 2Gx4 | SK hynix

MPN: H5AN8G4NAFR-VKC ✓ Active
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1.2 V Vdss 78-ball FBGA (PBGA78) Package DDR4 SDRAM Memory
From $2.98 USD / Unit
MOQ: 1 |
Price updated: 2026-09-04
Volume Pricing
Qty Unit Price Extended
1 $4.2 $4.20
10 $3.9 $39.00
100 $3.55 $355.00
500 $3.25 $1,625.00
1,000 $2.98 $2,980.00
ℹ️ All prices are in USD

Drop-in alternatives for H5AN8G4NAFR-VKC — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

H5AN8G4NAFR-RDC

✅ Drop-In
SK hynix
📦 78-ball FBGA (PBGA78)
DDR4 SDRAM · 8Gb · 1G x 4 · 1.2 V · FBGA-78 · [DATA_NEEDED: exact -RDC speed bin MT/s] · [DATA_NEEDED: CL for -RDC bin] · Synchronous, differential clock CK_t/CK_c

✓ In Stock

$2.3 / Unit

View Datasheet →

H5AN8G4NAFR-PBC

✅ Drop-In
SK hynix
📦 78-ball FBGA (PBGA78)
DDR4 SDRAM · 8 Gb · 2Gb x 4 · 1.2 V +/- 0.06 V · 2.5 V (+0.25/-0.125 V) · DDR4-1600 / 1866 / 2133 / 2400 (DLL ON) · 4 (BG0-BG1) · 16 (4 bank groups x 4 banks)

✓ In Stock

$3.55 / Unit

View Datasheet →

H5AN8G4NAFR-UHC

✅ Drop-In
SK hynix
📦 78-ball FBGA (PBGA78)
SK hynix (Hynix Semiconductor) · DDR4 SDRAM (CMOS) · 8 Gbit · 2G x4 · 1.2 V · UHC · Synchronous, dual rising/falling clock edges · Differential CK_t / CK_c

✓ In Stock

$3.05 / Unit

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H5AN8G8NAFR-VKC

✅ Drop-In
SK hynix
📦 78-ball FBGA (PBGA78)
DDR4 SDRAM · 8 Gb · 1G x 8 · DDR4-2666 (VKC bin) · 1.2 V · SSTL12 · 8 (BL8) · Supported (per DDR4 JEDEC architecture)

✓ In Stock

$4.15 / Unit

View Datasheet →

H5AN8G6NAFR-VKC

✅ Drop-In
SK hynix
📦 78-ball FBGA (PBGA78)
DDR4 SDRAM · 8 Gb · 512M x 16 · 1.2 V · CMOS · FBGA-96 (PBGA96) · -VKC (DDR4-2666 class, per SK Hynix part numbering) · Up to 2666 MT/s (per -VKC speed code)

✓ In Stock

$6.25 / Unit

View Datasheet →

H5AN8G8NAFR-UHC

✅ Drop-In
SK hynix
📦 78-ball FBGA (PBGA78)
DDR4 SDRAM · 8 Gbit · 1G x 8 · 2400 Mbps/pin (PC2400) · 1.2 V (DDR4 standard) · CMOS, synchronous · FBGA-78 (PBGA78) · Surface Mount

✓ In Stock

Contact for price

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H5AN8G4NAFR-VKC Maximum Ratings & Electrical Characteristics

Memory Type DDR4 SDRAM
Density 8 Gb
Organization 2G x 4
Data Rate 2666 Mbps per pin (DDR4-2666)
CAS Latency (CL) 19 (CL19, speed bin VK)
Supply Voltage (VDD) 1.2 V
I/O Voltage (VDDQ) 1.2 V
Package 78-ball FBGA (PBGA78)
Mounting Type Surface Mount
Technology CMOS
RoHS Status Compliant (Lead-Free & Halogen-Free)
Family H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC
Application Main memory requiring large density and high bandwidth
Datasheet Revision Rev. 1.2 (Jul. 2017)

H5AN8G4NAFR-VKC 78-ball fbga (pbga78) Pin Configuration Guide

Complete pinout information for H5AN8G4NAFR-VKC (78-ball fbga (pbga78) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.

78-ball fbga (pbga78) package pinout diagram for H5AN8G4NAFR-VKC

No detailed pinout data available for H5AN8G4NAFR-VKC.

Refer to the datasheet for full pin configuration.

Safe Operating Area (SOA) & Thermal Characteristics

Safe Operating Area Chart Default safe operating area chart for H5AN8G4NAFR-VKC Drain-to-Source Voltage (Vds) Drain Current (Id)

No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

H5AN8G4NAFR-VKC is suitable for 6 applications: ECC Server Main Memory, Industrial Computing Modules, Desktop and Workstation UDIMMs, Networking and Communications Equipment, Test and Measurement Instruments, Legacy DDR4-2666 Replacement Sourcing.

🖥️

ECC Server Main Memory

Server memory subsystems use x4 DDR4 devices because a 72-bit data bus built from eighteen H5AN8G4NAFR-VKC devices enables single-device error correction (chipkill-class protection). Its 2666 Mbps per-pin rate and CL19 timing align with server DDR4-2666 memory controllers from Intel Xeon and AMD EPYC platforms, and the 8Gb density allows 16 GB per single-rank 18-device bus. The 1.2V rail reduces power per module compared with DDR3. Designers must implement fly-by address/command routing, per-rank ODT programming, and SPD data matching the VK speed bin for BIOS training. The trade-off versus x8 devices is a higher component count, justified by stronger error coverage in always-on server workloads.

🏭

Industrial Computing Modules

Industrial controllers and embedded computing modules use the H5AN8G4NAFR-VKC as memory-down DRAM for Linux- or RTOS-based control platforms. The 8Gb density supports data buffering, logging, and vision or motion workloads without external storage round-trips, while the 1.2V DDR4 interface matches modern embedded SoCs and Intel Atom or ARM-class industrial CPUs with DDR4-2666 controllers. The x4 organization is useful where controller ECC protects long-uptime systems in factories. Layout requires matched fly-by routing and solid 1.2V planes; the RoHS-compliant, lead-free, halogen-free build meets industrial environmental compliance requirements. Designers should verify the SoC memory controller supports the VK (2666, CL19) timing parameters.

💻

Desktop and Workstation UDIMMs

Desktop and workstation unbuffered DIMMs populate eight or sixteen H5AN8G4NAFR-VKC devices per 64-bit bus to reach 4-16 GB per rank. The 2666 Mbps VK bin matches mainstream DDR4-2666 JEDEC platform defaults, delivering high bandwidth for productivity and gaming workloads without overclocking-grade bins. Each x4 device contributes four DQ lanes; eight devices span 32 bits per sub-channel in modern two-sub-channel desktop controllers. Module makers must program SPD data with the CL19 timings and implement fly-by clock routing and per-rank ODT. The FBGA-78 package supports standard 0.8 mm-pitch DIMM assembly with lead-free reflow profiles.

🌐

Networking and Communications Equipment

Routers, switches, and network appliances use the H5AN8G4NAFR-VKC for packet buffering, flow tables, and control-plane memory. High-bandwidth forwarding engines benefit from the 2666 Mbps data rate, and the 8Gb density supports large queue structures in aggregation hardware. The x4 organization lets network CPU subsystems build wide ECC-protected buses that tolerate single-bit and single-device failures, essential for telecom uptime targets. Thermal design matters in convection-cooled systems: DRAM junction temperature must be kept within the DDR4 specification, and the FBGA-78 solder joints should be verified against vibration requirements. Designers should confirm the network processor's DDR4 PHY supports the VK timing bin.

🔧

Test and Measurement Instruments

Oscilloscopes, logic analyzers, and signal generators require large acquisition memories to buffer captured waveforms. The H5AN8G4NAFR-VKC provides 8Gb per device; banks of devices assembled into 64- or 72-bit buses deliver the gigabyte-class capture memory typical of modern instruments. The 2666 Mbps VK bin sustains the streaming and post-processing bandwidth needed for real-time display updates, while ECC from x4 organization protects long acquisition runs against soft errors. Instrument makers typically mount these devices memory-down near the acquisition FPGA or ASIC. Signal integrity at 2666 Mbps in dense instrument chassis demands careful stackup design, length matching, and full IBIS-based simulation of DQS strobe alignment.

🧩

Legacy DDR4-2666 Replacement Sourcing

Many DDR4 platforms designed in 2016-2018 specified H5AN8G4NAFR-VKC at the DDR4-2666 VK bin, and repair, refurbishment, and second-source programs still need verified replacements. This page consolidates the same-family drop-in options (H5AN8G4NAFR-RDC, -PBC, -UHC share the FBGA-78 footprint and 2G x 4 organization) so buyers can quickly identify parts that solder onto the same land pattern. For exact 2666 Mbps CL19 operation, another VK-bin unit is required; RDC/PBC/UHC units must have the memory controller reconfigured to their lower speed bins. Distributors such as Win Source and netCOMPONENTS list stock and RFQ channels for the VKC suffix as of 2026-09-05.

What is the H5AN8G4NAFR-VKC?
The H5AN8G4NAFR-VKC is an 8Gb CMOS DDR4 SDRAM from SK hynix organized as 2G x 4, operating at the DDR4-2666 speed bin (VK, CL19) from a 1.2V supply in a 78-ball FBGA package. According to the SK hynix datasheet (Rev. 1.2, Jul. 2017), it belongs to the H5AN8G4NAFR-xxC family and is intended for main-memory applications requiring large memory density and high bandwidth.
What data rate and CAS latency does the H5AN8G4NAFR-VKC support?
The H5AN8G4NAFR-VKC supports a 2666 Mbps per-pin data rate (DDR4-2666) at CAS Latency 19, corresponding to the VK speed bin. The SK hynix revision history notes the speed bin was set to 2666 Mbps CL19 (VK) in the December 2015 revision, and Rev. 1.2 (Jul. 2017) is the current documented revision in the verified sources.
What is the supply voltage of the H5AN8G4NAFR-VKC?
The H5AN8G4NAFR-VKC operates from a nominal 1.2V supply, consistent with the DDR4 SDRAM generation. Distributor listings (AB Sunshine Electronics) confirm the 1.2V operating voltage. This is lower than the 1.35V of DDR3L and 1.5V of DDR3, reducing dynamic power in server and embedded main-memory designs.
What package does the H5AN8G4NAFR-VKC use?
The H5AN8G4NAFR-VKC is packaged in a 78-ball FBGA, listed as PBGA78 in distributor data (Datasheets360). This fine-pitch ball grid array is the standard footprint for discrete DDR4 DRAM components used on DIMM modules and memory-down motherboard designs. The FBGA-78 footprint is shared across the H5AN8GxNAFR-xxC family variants.
Is the H5AN8G4NAFR-VKC RoHS compliant?
Yes, the H5AN8G4NAFR-VKC is RoHS compliant. The SK hynix datasheet explicitly identifies the device as Lead-Free and Halogen-Free (RoHS Compliant) on its title page, so it is suitable for EU RoHS-regulated products and lead-free assembly processes.
Where to buy H5AN8G4NAFR-VKC online?
The H5AN8G4NAFR-VKC can be sourced through authorized distributors and broker platforms such as Win Source, netCOMPONENTS, and AB Sunshine Electronics, which list the part for quote and stock inquiry. Pricing on XAIPART is shown as of 2026-09-05; because DDR4 commodity DRAM pricing fluctuates with the spot market, requesting a quote (RFQ) for current volume pricing and lead time is recommended before ordering.
What is the price of H5AN8G4NAFR-VKC?
XAIPART lists tier pricing for the H5AN8G4NAFR-VKC from approximately $4.20 at quantity 1 down to about $2.98 at 1000 units, as of 2026-09-05. DDR4 component pricing varies significantly with DRAM market conditions, so these figures should be validated against current quotes from Win Source, netCOMPONENTS, or authorized SK hynix distributors for production purchasing.
What is the difference between H5AN8G4NAFR-VKC and H5AN8G6NAFR-VKC?
The difference is the I/O organization: the H5AN8G4NAFR-VKC is 2G x 4 while the H5AN8G6NAFR-VKC is 1G x 16, both 8Gb DDR4-2666 devices. According to the SK hynix datasheet, both belong to the same H5AN8GxNAFR-xxC 8Gb family. Choose x4 for ECC server buses; choose x16 for cost-optimized consumer or embedded designs needing wider data per device.
What is the difference between H5AN8G4NAFR-VKC and H5AN8G8NAFR-VKC?
These parts share the same 8Gb die family and DDR4-2666 VK speed bin, but differ in organization: the -8G4 part is 2G x 4 and the -8G8 part is 1G x 8. The x8 device halves the device count for a given bus width but does not provide the multi-bit-error coverage advantage of x4-based ECC schemes. Both are 1.2V DDR4 in FBGA packages per the SK hynix datasheet.
When should I choose the H5AN8G4NAFR-VKC over an x8 DDR4 device?
Choose the H5AN8G4NAFR-VKC (x4) when your memory subsystem uses inline ECC, such as server RDIMM/LRDIMM designs, where a 72-bit bus built from eighteen x4 devices enables chipkill-class error correction. Choose an x8 device when board space and BOM count dominate and ECC is handled at a coarser granularity or omitted. The trade-off is higher device count versus stronger error coverage and better bus granularity per rank.
Is the H5AN8G4NAFR-VKC suitable for industrial controller main memory?
Yes. Product overviews (GlobalSpec) position the H5AN8G4NAFR-VKC for data storage, firmware boot, embedded logging, industrial controllers, and computing modules. Its 8Gb density provides ample working memory for embedded Linux or RTOS platforms, and the 1.2V DDR4 interface aligns with modern embedded CPUs and SoC memory controllers supporting DDR4-2666.
Can H5AN8G4NAFR-UHC replace H5AN8G4NAFR-VKC?
The H5AN8G4NAFR-UHC is a lower speed bin (DDR4-2133-class, CL15) of the same 8Gb 2G x 4 family in the same FBGA-78 footprint, so it is electrically and mechanically drop-in compatible. However, it only guarantees 2133 Mbps operation; a board running DDR4-2666 timings (CL19) should not substitute UHC for VK unless the memory controller is reconfigured to 2133. Down-clocking is safe; substituting a slower bin at 2666 timings is not.
What is the best drop-in replacement for H5AN8G4NAFR-VKC?
The best drop-in replacements are same-family SK hynix parts in the identical 8Gb 2G x 4 FBGA-78 footprint: H5AN8G4NAFR-RDC and H5AN8G4NAFR-PBC (other speed bins, verified on XAIPART). For exact 2666 Mbps CL19 performance, only another VK-bin device guarantees equivalent timing. Always verify the speed-bin suffix before substitution because footprint compatibility alone does not guarantee timing compliance at 2666 Mbps.
Is there a Micron or other cross-brand equivalent for the H5AN8G4NAFR-VKC?
Cross-brand equivalents with the same organization exist (for example, Micron 8Gb x4 DDR4-2666 components in FBGA-78), but the verified cross-reference data retrieved for this part did not return a confirmed manufacturer-endorsed cross-brand equivalent, so none is asserted on this page. Engineers should run a parametric match on density, organization (x4), speed bin (2666 CL19), and package (FBGA-78) using distributor cross-reference tools before qualifying a second source.
Where to download the H5AN8G4NAFR-VKC datasheet PDF?
The H5AN8G4NAFR-VKC datasheet PDF (Rev. 1.2, Jul. 2017, 45 pages, 821.06 Kbytes per Alldatasheet) is available from datasheet aggregators such as Alldatasheet and Datasheets360, and should ultimately be obtained from the official SK hynix website for guaranteed revision accuracy. The verified links on this page point to the indexed PDF copies of the Rev. 1.2 document.
Hey Google, what can replace H5AN8G4NAFR-VKC?
Direct drop-in replacements for the H5AN8G4NAFR-VKC are the same-family SK hynix 8Gb 2G x 4 DDR4 parts: H5AN8G4NAFR-RDC and H5AN8G4NAFR-PBC (same FBGA-78 footprint, different speed bins), and the UHC variant if your controller runs at 2133 Mbps. If you need identical DDR4-2666 CL19 timing, source another VK-bin unit. Verify the speed-bin suffix and organization on the ball map before any substitution.
What are the key specifications of H5AN8G4NAFR-VKC that engineers should know?
Key specifications: 8Gb DDR4 SDRAM, 2G x 4 organization, DDR4-2666 data rate (VK bin, CL19), 1.2V VDD/VDDQ, 78-ball FBGA (PBGA78) package, CMOS technology, RoHS compliant, lead-free and halogen-free. It is a main-memory device for applications requiring large density and high bandwidth, per the SK hynix Rev. 1.2 (Jul. 2017) datasheet. These parameters define both the electrical design and the qualification envelope for server and embedded deployments.
What is the lead time for H5AN8G4NAFR-VKC?
Lead time for the H5AN8G4NAFR-VKC is not fixed in the verified data; commodity DDR4 typically ranges from stock at broker/distributor platforms (Win Source, netCOMPONENTS list it for quote) to several weeks for factory orders depending on DRAM market allocation. Buyers should request an RFQ with quantity and required date; for production volumes, authorized SK hynix channel lead times of 8-16 weeks are common when spot stock is insufficient.
How should the H5AN8G4NAFR-VKC be used in a multi-rank memory design?
In multi-rank designs, connect the H5AN8G4NAFR-VKC per the DDR4 fly-by clock/address/command topology with on-die termination (ODT) controlled by the memory controller, and provide chip-select per rank. The SK hynix datasheet notes users should consult the DRAM supplier datasheet and/or DIMM SPD to determine support for specific features such as IPP specifications. Follow trace-length matching and VREF training procedures of the DDR4 standard at 2666 Mbps.

Engineering reference data for H5AN8G4NAFR-VKC — comparison, design guidance, and compliance information.

Selection Guide

Choose the H5AN8G4NAFR-VKC when your platform requires 8Gb DDR4 at the 2666 Mbps VK bin with x4 organization - typically ECC-protected server buses, industrial controllers, and DDR4-2666 replacement sourcing. If your memory controller runs at 2133 Mbps, the H5AN8G4NAFR-UHC offers the same die and footprint at lower cost, but it must not be used at 2666 timings. The RDC and PBC suffixes serve intermediate speed bins for platforms clocked below 2666. Choose the H5AN8G8NAFR-VKC when you prefer fewer devices per bus with x8 I/O, or the H5AN8G6NAFR-VKC for x16-based cost-optimized consumer designs; both keep the 2666 VK performance. All share the FBGA-78 footprint, but DQ ball functions differ by organization, so verify ball-map compatibility before second-sourcing. For confirmed 2666 Mbps CL19 operation, only a VK-bin part should be substituted for the VKC.

Comparison with Alternatives

Parameter This Product H5AN8G4NAFR-RDC H5AN8G4NAFR-PBC H5AN8G4NAFR-UHC H5AN8G8NAFR-VKC H5AN8G6NAFR-VKC
Package 78-ball FBGA (PBGA78) 78-ball FBGA - same 78-ball FBGA - same 78-ball FBGA - same 78-ball FBGA - same 78-ball FBGA - same
Brand SK hynix SK hynix SK hynix SK hynix SK hynix SK hynix
Density 8 Gb 8 Gb 8 Gb 8 Gb 8 Gb 8 Gb
Organization 2G x 4 2G x 4 2G x 4 2G x 4 1G x 8 512M x 16
Data Rate 2666 Mbps (VK) [DATA_NEEDED] [DATA_NEEDED] 2133 Mbps class (UH) 2666 Mbps (VK) 2666 Mbps (VK)
CAS Latency CL19 [DATA_NEEDED] [DATA_NEEDED] CL15 CL19 CL19
Supply Voltage 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V 1.2 V
RoHS Compliance Compliant (Lead-Free & Halogen-Free) Compliant Compliant Compliant Compliant Compliant

Key Differentiators

  • Highest speed bin in family (2666 Mbps, CL19) (vs H5AN8G4NAFR-UHC)
  • x4 organization enables chipkill-class ECC (vs H5AN8G8NAFR-VKC)
  • Common 8Gb family footprint (vs H5AN8G6NAFR-VKC)

Design Notes

At 2666 Mbps, DDR4 signal integrity is dominated by fly-by topology and ODT calibration. Route address/command/clock in a fly-by daisy chain across devices with series termination at the controller, and length-match DQ to its DQS within the tolerance allowed by the memory controller training window. Run IBIS or full-channel simulation on the DQ/DQS and CA nets before tape-out; per the SK hynix datasheet, users should also refer to the DRAM supplier datasheet and/or DIMM SPD to confirm feature support such as IPP specifications.

Provide a dedicated, low-impedance 1.2V plane for VDD and VDDQ with local decoupling at each device: a mix of 0.1 uF and 1 uF ceramics within a few millimeters of the FBGA-78 balls, plus bulk capacitance per rail on the board. Estimated: a single 2G x 4 device at full 2666 Mbps activity draws on the order of hundreds of milliwatts; scale rail budgeting by device count and bus utilization from controller power estimation tools rather than datasheet IDD alone. Keep VREF rails clean and separately filtered.

Do not substitute lower speed bins (RDC, PBC, UHC) into a DDR4-2666 CL19 design without reconfiguring the memory controller; the VK suffix specifically denotes the 2666 Mbps CL19 bin per the SK hynix revision history. Also confirm the second-source organization matches the bus width assumption: x4, x8, and x16 family members share the package footprint but not the DQ ball function, so a footprint match alone is not an electrical substitute.

Compliance Information

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Applicable
Lead Free
Yes
Halogen Free
Yes
Conflict Minerals
Unknown

Per SK hynix datasheet title page: 8Gb DDR4 SDRAM, Lead-Free & Halogen-Free (RoHS Compliant). REACH and conflict-minerals status not stated in verified data.

Data verified on: 2026-09-05 — data verified and curated by XAIPART's component engineering team

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Related Components & Terms

SK hynix H5AN8G4NAFR-VKC H5AN8G8NAFR-VKC H5AN8G6NAFR-VKC H5AN8G4NAFR-UHC DDR4 SDRAM DRAM synchronous dynamic random-access memory JEDEC RoHS FBGA-78 PBGA78 ball grid array DDR4-2666 CL19 speed bin VK ECC server main memory RDIMM UDIMM CMOS 1.2 V VDDQ industrial controller memory-down design
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