H5AN8G8NAFR-VKC vs H5AN8G4NAFR-VKC 对比

详细并排对比 H5AN8G8NAFR-VKC 出自 SK hynix 和 H5AN8G4NAFR-VKC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN8G8NAFR-VKC H5AN8G8NAFR-VKC - 8Gb DDR4-2666 SDRAM 1.2V | SK hynix

H5AN8G8NAFR-VKC - 8Gb DDR4-2666 SDRAM 1.2V | SK hynix

H5AN8G8NAFR-VKC ✓ 量产中
SK hynix
H5AN8G4NAFR-VKC H5AN8G4NAFR-VKC - 8Gb DDR4-2666 SDRAM 2Gx4 | SK hynix

H5AN8G4NAFR-VKC - 8Gb DDR4-2666 SDRAM 2Gx4 | SK hynix

H5AN8G4NAFR-VKC ✓ 量产中

规格对比

参数 H5AN8G8NAFR-VKC H5AN8G4NAFR-VKC
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $4.15 $2.98
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 8 Gb 8 Gb
存储组织 1G x 8 2G x 4
Speed Grade DDR4-2666 (VKC bin) —
Supply Voltage (VDD) 1.2 V 1.2 V
接口 SSTL12 —
Burst Length 8 (BL8) —
Bank Group Architecture Supported (per DDR4 JEDEC architecture) —
On-Die Termination (ODT) Yes —
DLL Yes (DLL for output skew control) —
封装 78-ball FBGA 78-ball FBGA (PBGA78)
安装类型 Surface Mount Surface Mount
工作温度 [DATA_NEEDED: operating temperature range] [DATA_NEEDED: Operating Temperature]
RoHS 状态 Compliant (Lead-Free & Halogen-Free) Compliant (Lead-Free & Halogen-Free)
Process Technology CMOS —
Recommended Application Main memory requiring large density and high bandwidth —
数据速率 — 2666 Mbps per pin (DDR4-2666)
CAS Latency (CL) — 19 (CL19, speed bin VK)
I/O Voltage (VDDQ) — 1.2 V
Technology — CMOS
Family — H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC
Application — Main memory requiring large density and high bandwidth
Datasheet Revision — Rev. 1.2 (Jul. 2017)
Refresh — [DATA_NEEDED: Refresh specification]

数据手册与资源

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