H5AN8G8NAFR-VKC vs K4A8G085WC-BCWE Comparison
Detailed side-by-side comparison of H5AN8G8NAFR-VKC by SK hynix and K4A8G085WC-BCWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5AN8G8NAFR-VKC | K4A8G085WC-BCWE |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.15 | $7.38 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 |
| Speed Grade | DDR4-2666 (VKC bin) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Interface | SSTL12 | DDR4 (parallel, double data rate) |
| Burst Length | 8 (BL8) | — |
| Bank Group Architecture | Supported (per DDR4 JEDEC architecture) | DDR4 bank groups (8n prefetch) |
| On-Die Termination (ODT) | Yes | — |
| DLL | Yes (DLL for output skew control) | — |
| Package | 78-ball FBGA | 78FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| RoHS Status | Compliant (Lead-Free & Halogen-Free) | Compliant (per JLCPCB listing) |
| Process Technology | CMOS | — |
| Recommended Application | Main memory requiring large density and high bandwidth | — |
| Data Rate | — | 3200 Mbps (DDR4-3200) |
| Supply Voltage | — | 1.2 V |
| Application Class | — | Computing / Embedded main memory |
| Manufacturer | — | Samsung Electronics |
| Speed Bin Suffix | — | -BCWE (DDR4-3200, commercial temp) |
| Refresh | — | Standard DDR4 refresh mechanisms |
| On-Die Termination | — | Yes (DDR4 ODT) |