H5ANAG8NBJR-RDC vs H5AN8G8NCJR-XNC Comparison

Detailed side-by-side comparison of H5ANAG8NBJR-RDC by SK hynix and H5AN8G8NCJR-XNC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5ANAG8NBJR-RDC H5ANAG8NBJR-RDC - 16Gb DDR4 SDRAM 2Gx8 2666 | SK hynix

H5ANAG8NBJR-RDC - 16Gb DDR4 SDRAM 2Gx8 2666 | SK hynix

H5ANAG8NBJR-RDC ✓ Active

Specification Comparison

Parameter H5ANAG8NBJR-RDC H5AN8G8NCJR-XNC
Brand SK hynix SK hynix
Category DRAM Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $3.55 $30.69
Memory Type DDR4 SDRAM DDR4 SDRAM
Density 16 Gbit —
Organization 2G x 8 1 Gb x 8
Supply Voltage (VDD) 1.2 V —
I/O Voltage (VDDQ) 1.2 V —
Interface SSTL12 DDR4 (8-bit data interface)
Speed Grade (suffix R) DDR4-2666 class —
Package 78-ball FBGA 78-ball FBGA, 7.5 mm x 11 mm
Mounting Type Surface Mount Surface Mount
Refresh Self-refresh and auto-refresh (8K/64ms class per family datasheet) Auto self-refresh
Bank Groups 4 (per 16Gb DDR4 family datasheet) —
Data Strobe DQS with read/write training —
Data Bus Inversion Supported (DBI) —
CAS Latency [DATA_NEEDED: CAS Latency] —
Operating Temperature [DATA_NEEDED: Operating Temperature Range] 0 C to +85 C
RoHS Status Compliant (lead-free PBGA per family product data) Compliant
Lifecycle Status Active —
Memory Size — 8 Gbit
Data Rate — 3200 Mbps (DDR4-3200)
Clock Frequency — 1.6 GHz
Supply Voltage — 1.14 V to 1.26 V (1.2 V nominal)
Architecture — Bank-group based DDR4
Precharge — Auto precharge
On-Chip Termination — Dynamic ODT
Calibration — ZQ calibration, write leveling
Error Handling — CRC function
Reset — Asynchronous reset
Data Mask — Data mask function
Current - Operating — 39 mA
Current - Standby — 30 mA
Lead-Free / Halogen-Free — Yes

Datasheets & Resources

Browse All Products Create BOM Request Quote