H5ANAG8NBJR-RDC vs H5ANAG8NBJR-VKC Comparison

Detailed side-by-side comparison of H5ANAG8NBJR-RDC by SK hynix and H5ANAG8NBJR-VKC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5ANAG8NBJR-RDC H5ANAG8NBJR-RDC - 16Gb DDR4 SDRAM 2Gx8 2666 | SK hynix

H5ANAG8NBJR-RDC - 16Gb DDR4 SDRAM 2Gx8 2666 | SK hynix

H5ANAG8NBJR-RDC ✓ Active

Specification Comparison

Parameter H5ANAG8NBJR-RDC H5ANAG8NBJR-VKC
Brand SK hynix SK hynix
Category DRAM Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $3.55 $8.60
Memory Type DDR4 SDRAM DDR4 SDRAM
Density 16 Gbit 16 Gbit
Organization 2G x 8 2G x 8
Supply Voltage (VDD) 1.2 V —
I/O Voltage (VDDQ) 1.2 V —
Interface SSTL12 —
Speed Grade (suffix R) DDR4-2666 class —
Package 78-ball FBGA FBGA-78
Mounting Type Surface Mount Surface Mount
Refresh Self-refresh and auto-refresh (8K/64ms class per family datasheet) —
Bank Groups 4 (per 16Gb DDR4 family datasheet) —
Data Strobe DQS with read/write training —
Data Bus Inversion Supported (DBI) —
CAS Latency [DATA_NEEDED: CAS Latency] —
Operating Temperature [DATA_NEEDED: Operating Temperature Range] 0C to +85C
RoHS Status Compliant (lead-free PBGA per family product data) Compliant, Lead-Free and Halogen-Free
Lifecycle Status Active —
Speed Grade — DDR4-2666 (2666 Mbps/pin)
Supply Voltage — 1.14 V to 1.26 V (VDDQ)
Clock Frequency — 1.6 GHz (internal interface per distributor data)
Standby Current — 30 mA (operating, per distributor listing)
Auto Self-Refresh — Yes
Data Mask Function — Yes
Dynamic On-Chip Termination — Yes
Asynchronous Reset — Yes
ZQ Calibration — Yes
Write Leveling — Yes
CRC Function — Yes
Auto Precharge — Yes
Refresh Interval — [DATA_NEEDED: tREFI refresh interval]

Datasheets & Resources

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