H5ANAG8NBJR-VKC - 16Gb DDR4-2666 SDRAM x8 FBGA-78 | SK Hynix
MPN: H5ANAG8NBJR-VKC ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $12.5 | $12.50 |
| 10 | $11.4 | $114.00 |
| 100 | $10.2 | $1,020.00 |
| 500 | $9.3 | $4,650.00 |
| 1,000 | $8.6 | $8,600.00 |
Drop-in alternatives for H5ANAG8NBJR-VKC — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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H5ANAG8NCJR-VKC
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View Datasheet →H5ANAG8NBJR-VKC Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Density | 16 Gbit |
| Organization | 2G x 8 |
| Speed Grade | DDR4-2666 (2666 Mbps/pin) |
| Supply Voltage | 1.14 V to 1.26 V (VDDQ) |
| Clock Frequency | 1.6 GHz (internal interface per distributor data) |
| Operating Temperature | 0C to +85C |
| Package | FBGA-78 |
| Mounting Type | Surface Mount |
| Standby Current | 30 mA (operating, per distributor listing) |
| Auto Self-Refresh | Yes |
| Data Mask Function | Yes |
| Dynamic On-Chip Termination | Yes |
| Asynchronous Reset | Yes |
| ZQ Calibration | Yes |
| Write Leveling | Yes |
| CRC Function | Yes |
| Auto Precharge | Yes |
| RoHS Status | Compliant, Lead-Free and Halogen-Free |
H5ANAG8NBJR-VKC fbga-78 Pin Configuration Guide
Complete pinout information for H5ANAG8NBJR-VKC (fbga-78 package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for H5ANAG8NBJR-VKC.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
H5ANAG8NBJR-VKC is suitable for 6 applications: Industrial Controller Main Memory, Embedded Computing Modules, Network Appliance Packet Buffering, Legacy DDR4 Replacement Sourcing, Test and Measurement Instrumentation, Consumer and Display Electronics.
Industrial Controller Main Memory
The H5ANAG8NBJR-VKC's 16Gb (2Gx8) DDR4-2666 configuration provides the large, high-bandwidth working memory required by industrial PLCs, motion controllers, and edge gateways running Linux-based real-time stacks. Its 0C to +85C rating covers typical control-cabinet ambient conditions, while the 1.14V to 1.26V supply keeps total system power low compared with DDR3 at similar bandwidth. In a typical design, two or four devices attach to a fly-by routed command/address bus with dynamic on-chip termination absorbing reflections, eliminating discrete termination resistors and saving board area. The CRC and auto precharge features improve link reliability in electrically noisy factory environments. For extended-temperature deployments, pair with the industrial-temperature variant within the same H5ANAG8N family footprint.
Recommended
Embedded Computing Modules
COM Express and SMARC compute modules commonly use soldered-down DDR4 components, and the H5ANAG8NBJR-VKC's 16Gb density in a 78-ball FBGA allows 2 GB or 4 GB of memory per module without SO-DIMM connectors. DDR4-2666 delivers 21.3 GB/s peak bandwidth per 64-bit channel, sufficient for machine-vision preprocessing and protocol conversion workloads. The write leveling and ZQ calibration functions let module vendors pass signal-integrity validation across PCB stackup variations, while asynchronous reset simplifies warm-restart behavior in headless embedded systems. Because DDR4 component ballouts are JEDEC-standardized, module designers can dual-source with Micron MT40A2G8AG-062E or Samsung K4AAG085WM parts on the same footprint, protecting supply continuity for long-lifetime embedded programs.
Recommended
Network Appliance Packet Buffering
Enterprise switches, routers, and security appliances use DDR4 DRAM as deep packet buffers and flow tables, where the H5ANAG8NBJR-VKC's 2Gx8 organization and 2666 Mbps pin rate provide 2.6+ GB/s per device. Bank-group architecture enables short burst interleaving, keeping effective bandwidth high under the random access patterns typical of queue management. The dynamic ODT and CRC functions maintain timing margins on the heavily loaded multi-drop DDR4 buses found in networking line cards. Because buffer memory is frequently accessed, the listed ~30 mA operating current and low 1.2V domain reduce line-card thermal budget versus DDR3L alternatives of equal bandwidth. Scale capacity by populating multiple FBGA-78 devices on shared address/command trees within controller rank limits.
Recommended
Legacy DDR4 Replacement Sourcing
Programs maintaining DDR4-based platforms face die-revision end-of-life events as SK Hynix transitions fab nodes, and the H5ANAG8NBJR-VKC family offers forward and backward substitution paths within an identical FBGA-78 footprint. Designs originally built on B-die (H5ANAG8NBJR) can move to C-die (H5ANAG8NCJR-VKC, with 31,550 pieces of distributor stock reported in July 2026) or M-die (H5ANAG8NMJR-VKC) without PCB changes, since the JEDEC ballout is unchanged. Engineering effort is limited to re-running memory-controller training and updating the validated die-revision list in firmware. Cross-brand fallback to Micron MT40A2G8AG-062E or Samsung K4AAG085WM extends supply resilience further while keeping the same land pattern.
Recommended
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and protocol analyzers capture gigabytes of sample data, and the H5ANAG8NBJR-VKC's 16Gb x8 organization lets designers build deep capture memory with a compact DRAM array. DDR4-2666 provides sustained streaming bandwidth adequate for moving acquisition samples from front-end FPGAs into bulk storage, and the data mask function enables efficient partial writes into circular capture buffers without read-modify-write cycles. The 0C to +85C operating range matches benchtop instrument environments, and lead-free, halogen-free FBGA assembly meets standard electronics-manufacturing requirements. Multiple devices on a fly-by bus with on-chip termination simplify layout on dense multilayer acquisition boards, while asynchronous reset provides deterministic instrument power-cycle behavior.
Recommended
Consumer and Display Electronics
Smart TVs, set-top boxes, and digital signage players use DDR4 DRAM for graphics frame buffers and application memory, and the H5ANAG8NBJR-VKC's 16Gb density supports 4K frame-buffer requirements (a 3840x2160 frame at 32 bpp is roughly 33 MB, so 16Gb provides generous multi-buffer headroom). DDR4-2666 bandwidth sustains smooth UI composition and video decode at low 1.2V power, extending thermal design margins in sealed fanless enclosures. The FBGA-78 package's small footprint allows memory placement close to the SoC, shortening fly-by routing stubs and improving eye margins. Consumer programs benefit from the JEDEC-standard footprint enabling cost-driven second sourcing with SK Hynix die-revision siblings or Micron/Samsung equivalents without PCB respin.
Recommended
Recommended Products Summary
Engineering reference data for H5ANAG8NBJR-VKC — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | H5ANAG8NBJR-RDC | H5ANAG8NMJR-VKC | H5ANAG8NCJR-VKC | MT40A2G8AG-062E | K4AAG085WM-BCWE |
|---|---|---|---|---|---|---|
| Package | FBGA-78 | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same (JEDEC standard) | FBGA-78 - same (JEDEC standard) |
| Brand | SK Hynix | SK Hynix | SK Hynix | SK Hynix | Micron Technology | Samsung Electronics |
| Density | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit |
| Organization | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 |
| Speed Grade | DDR4-2666 | DDR4-2933 class (R suffix) | DDR4-2666 | DDR4-2666 | DDR4-2666 (-062) | DDR4-2666 class (W bin) |
| Supply Voltage | 1.14 V to 1.26 V | 1.14 V to 1.26 V | 1.14 V to 1.26 V | 1.14 V to 1.26 V | 1.2 V nominal (DDR4 spec) | 1.2 V nominal (DDR4 spec) |
| Operating Temperature | 0C to +85C | 0C to +85C | 0C to +85C | 0C to +85C | 0C to +85C | 0C to +85C |
| Feature Set (CRC/ODT/Write Leveling/ZQ) | Yes / Yes / Yes / Yes | Yes / Yes / Yes / Yes | Yes / Yes / Yes / Yes | Yes / Yes / Yes / Yes | Yes / Yes / Yes / Yes | Yes / Yes / Yes / Yes |
| Die Revision | B die (ordering code B) | B die | M die (newer generation) | C die | Micron die (vendor specific) | Samsung die (vendor specific) |
Key Differentiators
- DDR4-2666 speed bin in the B-die generation (vs H5ANAG8NBJR-PBC)
- Battle-tested die revision with broad controller validation (vs H5ANAG8NMJR-VKC)
- JEDEC-standardized footprint enables cross-brand second sourcing (vs MT40A2G8AG-062E)
Design Notes
Route DDR4 command/address lines in a fly-by topology with series resistors at the controller and rely on the H5ANAG8NBJR-VKC's dynamic on-chip termination (ODT) rather than discrete termination. Keep DQS_t/DQS_c strobe pairs length-matched within the controller's spec (commonly +/-5 mil per inch rules apply to DQ vs DQS) and reference all DDR4 layers to a solid ground plane. At 2666 Mbps, any via stub in the DQ path degrades the eye; use back-drilling on boards thicker than ~1.6 mm.
Provide a dedicated 1.2V rail regulated to the 1.14V-1.26V window with separate bulk capacitance per device and 0.1uF/0.01uF ceramic decoupling at each VDD/VDDQ ball pair. Use the VTT termination rail (0.6V) sourced by a dedicated termination regulator with sensing at the far end of the fly-by bus. Estimated: at the listed ~30 mA operating current, one device draws roughly 36 mW from 1.2V, but system-level current during simultaneous multi-bank activation can exceed datasheet IDD averages, so size the rail on peak controller current budgets, not the per-device average.
Do not mix SK Hynix B-die (this part), C-die (H5ANAG8NCJR-VKC), and M-die (H5ANAG8NMJR-VKC) or cross-brand Micron/Samsung devices within one rank without re-running memory training; die revisions have different timing sets and training convergence behavior even though the footprint is identical. Always execute ZQ calibration after reset and at temperature excursions, and never omit the asynchronous RESET# assertion during power-up sequencing, or the device may enter an undefined state with elevated current.
Compliance Information
JLCPCB and LCSC listings mark the family ROHS; SK Hynix family datasheet title cites Lead-Free & Halogen-Free (RoHS). REACH and conflict-minerals declarations not present in provided data.
