H5ANAG8NBJR-VKC vs H5ANAG8NBJR-RDC Comparison

Detailed side-by-side comparison of H5ANAG8NBJR-VKC by SK hynix and H5ANAG8NBJR-RDC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5ANAG8NBJR-RDC H5ANAG8NBJR-RDC - 16Gb DDR4 SDRAM 2Gx8 2666 | SK hynix

H5ANAG8NBJR-RDC - 16Gb DDR4 SDRAM 2Gx8 2666 | SK hynix

H5ANAG8NBJR-RDC ✓ Active

Specification Comparison

Parameter H5ANAG8NBJR-VKC H5ANAG8NBJR-RDC
Brand SK hynix SK hynix
Category Memory ICs DRAM
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $8.60 $3.55
Memory Type DDR4 SDRAM DDR4 SDRAM
Density 16 Gbit 16 Gbit
Organization 2G x 8 2G x 8
Speed Grade DDR4-2666 (2666 Mbps/pin) —
Supply Voltage 1.14 V to 1.26 V (VDDQ) —
Clock Frequency 1.6 GHz (internal interface per distributor data) —
Operating Temperature 0C to +85C [DATA_NEEDED: Operating Temperature Range]
Package FBGA-78 78-ball FBGA
Mounting Type Surface Mount Surface Mount
Standby Current 30 mA (operating, per distributor listing) —
Auto Self-Refresh Yes —
Data Mask Function Yes —
Dynamic On-Chip Termination Yes —
Asynchronous Reset Yes —
ZQ Calibration Yes —
Write Leveling Yes —
CRC Function Yes —
Auto Precharge Yes —
RoHS Status Compliant, Lead-Free and Halogen-Free Compliant (lead-free PBGA per family product data)
Refresh Interval [DATA_NEEDED: tREFI refresh interval] —
Supply Voltage (VDD) — 1.2 V
I/O Voltage (VDDQ) — 1.2 V
Interface — SSTL12
Speed Grade (suffix R) — DDR4-2666 class
Refresh — Self-refresh and auto-refresh (8K/64ms class per family datasheet)
Bank Groups — 4 (per 16Gb DDR4 family datasheet)
Data Strobe — DQS with read/write training
Data Bus Inversion — Supported (DBI)
CAS Latency — [DATA_NEEDED: CAS Latency]
Lifecycle Status — Active

Datasheets & Resources

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