H5ANAG8NBJR-VKC vs H5ANAG8NBJR-RDC Vergleich
Detaillierter Direktvergleich von H5ANAG8NBJR-VKC von SK hynix und H5ANAG8NBJR-RDC von SK hynix. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | H5ANAG8NBJR-VKC | H5ANAG8NBJR-RDC |
|---|---|---|
| Marke | SK hynix | SK hynix |
| Kategorie | Memory ICs | DRAM |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $8,60 | $3,55 |
| Speichertyp | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | 16 Gbit |
| Speicherorganisation | 2G x 8 | 2G x 8 |
| Speed Grade | DDR4-2666 (2666 Mbps/pin) | — |
| Versorgungsspannung | 1.14 V to 1.26 V (VDDQ) | — |
| Clock Frequency | 1.6 GHz (internal interface per distributor data) | — |
| Betriebstemperatur | 0C to +85C | [DATA_NEEDED: Operating Temperature Range] |
| Gehäuse | FBGA-78 | 78-ball FBGA |
| Montageart | Surface Mount | Surface Mount |
| Standby Current | 30 mA (operating, per distributor listing) | — |
| Auto Self-Refresh | Yes | — |
| Data Mask Function | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| Asynchronous Reset | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| Auto Precharge | Yes | — |
| RoHS-Status | Compliant, Lead-Free and Halogen-Free | Compliant (lead-free PBGA per family product data) |
| Refresh Interval | [DATA_NEEDED: tREFI refresh interval] | — |
| Supply Voltage (VDD) | — | 1.2 V |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Schnittstelle | — | SSTL12 |
| Speed Grade (suffix R) | — | DDR4-2666 class |
| Refresh | — | Self-refresh and auto-refresh (8K/64ms class per family datasheet) |
| Bank Groups | — | 4 (per 16Gb DDR4 family datasheet) |
| Data Strobe | — | DQS with read/write training |
| Data Bus Inversion | — | Supported (DBI) |
| CAS-Latenz | — | [DATA_NEEDED: CAS Latency] |
| Lebenszyklusstatus | — | Active |