H5CG48MEBDX014N vs K4RAH086VB-BCQK Comparison
Detailed side-by-side comparison of H5CG48MEBDX014N by SK hynix and K4RAH086VB-BCQK by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5CG48MEBDX014N | K4RAH086VB-BCQK |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $41.68 | $41.02 |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gbit | 16 Gb |
| Organization | 2G x 8 | 2G x 8 |
| Data Rate | 4800 Mbps | 4800 Mbps (DDR5-4800) |
| Supply Voltage | 1.1 V | — |
| Row Address | 12 bits | — |
| Column Address | 9 bits | — |
| Die Generation | M-die | — |
| Operating Temperature | 0C to +95C | 0C to 95C (commercial) |
| Package | FBGA-82 (11 x 10 mm) | FBGA-82 |
| Mounting Type | Surface Mount | Surface Mount |
| Interface Type | Parallel, DDR5 | — |
| Memory Class | Synchronous DRAM | — |
| RoHS Status | Compliant | [DATA_NEEDED: RoHS status] |
| Speed Class | DDR5-4800 (PC5) | — |
| Clock Frequency | — | 2400 MHz |
| Supply Voltage (VDD) | — | 1.1 V |
| Interface | — | Parallel |
| ECC | — | On-die ECC |
| Burst Length | — | BL32 (DDR5 standard) |
| Memory Format | — | DRAM (volatile) |
| DLL Mode | — | DLL Enabled (datasheet timing basis) |
| Product Status | — | Active |
| Packaging | — | Tray |