H5CG48MEBDX014N vs K4RAH086VB-BCQK 对比
详细并排对比 H5CG48MEBDX014N 出自 SK hynix 和 K4RAH086VB-BCQK 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5CG48MEBDX014N | K4RAH086VB-BCQK |
|---|---|---|
| 品牌 | SK hynix | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $41.68 | $41.02 |
| 存储器类型 | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gbit | 16 Gb |
| 存储组织 | 2G x 8 | 2G x 8 |
| 数据速率 | 4800 Mbps | 4800 Mbps (DDR5-4800) |
| 电源电压 | 1.1 V | — |
| Row Address | 12 bits | — |
| Column Address | 9 bits | — |
| Die Generation | M-die | — |
| 工作温度 | 0C to +95C | 0C to 95C (commercial) |
| 封装 | FBGA-82 (11 x 10 mm) | FBGA-82 |
| 安装类型 | Surface Mount | Surface Mount |
| 接口类型 | Parallel, DDR5 | — |
| Memory Class | Synchronous DRAM | — |
| RoHS 状态 | Compliant | [DATA_NEEDED: RoHS status] |
| Speed Class | DDR5-4800 (PC5) | — |
| Clock Frequency | — | 2400 MHz |
| Supply Voltage (VDD) | — | 1.1 V |
| 接口 | — | Parallel |
| ECC | — | On-die ECC |
| Burst Length | — | BL32 (DDR5 standard) |
| Memory Format | — | DRAM (volatile) |
| DLL Mode | — | DLL Enabled (datasheet timing basis) |
| Product Status | — | Active |
| Packaging | — | Tray |