IAUA120N04S5N014AUMA1 vs IPC50N04S5L5R5ATMA1 Comparison

Detailed side-by-side comparison of IAUA120N04S5N014AUMA1 by Infineon and IPC50N04S5L5R5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IAUA120N04S5N014AUMA1 IPC50N04S5L5R5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies —
Part Number IAUA120N04S5N014AUMA1 —
Series OptiMOS™ 5 —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) —
Drain-to-Source Voltage (V<sub>DSS</sub>) 40 V —
Continuous Drain Current (I<sub>D</sub>) @ T<sub>C</sub>=25°C 120 A —
R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10 V 1.4 mΩ —
Power Dissipation (P<sub>D</sub>) @ T<sub>C</sub>=25°C 136 W —
Operating Temperature Range -55°C to +175°C [DATA_NEEDED: confirmed min/max from datasheet] -55 °C to +175 °C
Package PG-HSOF-5-2 (sTOLL) PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad)
Mounting Type Surface Mount Surface Mount
Pin Count 5 + Tab (6 effective) —
Gate Drive Enhancement Mode —
Automotive Qualification AEC-Q101 —
RoHS Status Compliant —
MSL Level [DATA_NEEDED: MSL rating] —
Avalanche Rated Yes (100% avalanche tested) —
Transistor Type — N-Channel MOSFET
Mode — Enhancement Mode
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tc) — 50 A
Maximum Drain Current (silicon-limited, 25 °C) — 60 A
On-Resistance RDS(on) max @ VGS=10 V — 5.5 mΩ
Gate Threshold VGS(th) — Logic Level (enhancement at ≤ 4.5 V VGS)
Power Dissipation (Tc) — 42 W
Thermal Resistance Junction-to-Case RthJC — 3.6 K/W
AEC-Q101 Qualification — Qualified (automotive grade)
MSL (Moisture Sensitivity Level) — MSL1
Peak Reflow Temperature — 260 °C
Avalanche Rating — 100 % Avalanche Tested
RoHS / REACH — RoHS Compliant (Green Product)

Datasheets & Resources

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