IAUA220N08S5N021AUMA1 vs IAUC120N04S6N010ATMA1 Comparison
Detailed side-by-side comparison of IAUA220N08S5N021AUMA1 by Infineon and IAUC120N04S6N010ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUA220N08S5N021AUMA1
IAUA220N08S5N021AUMA1 - 80V, 220A OptiMOS-5 N-MOSFET | Infineon
IAUA220N08S5N021AUMA1 β ActiveInfineon
IAUC120N04S6N010ATMA1
IAUC120N04S6N010ATMA1 - 40V 1mΞ© 150A N-Ch OptiMOS 6 | Infineon
IAUC120N04S6N010ATMA1 β ActiveSpecification Comparison
| Parameter | IAUA220N08S5N021AUMA1 | IAUC120N04S6N010ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.45 | $0.68 |
| Technology | OptiMOS-5 (75V-120V family) | OptiMOS 6 |
| Drain-Source Voltage (V_DS max) | 80 V | β |
| Continuous Drain Current (I_D, Tj) | 220 A | β |
| Static Drain-Source On-Resistance (R_DS(on)) | 2.1 mΞ© at 10 V V_GS | β |
| Power Dissipation (P_D, Tc) | 211 W | β |
| Gate-Source Voltage (V_GS max) | [DATA_NEEDED: V_GS max absolute rating] | β |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical/min/max] | β |
| Operating Temperature Range | -55C to +175C (Tj) | -55 Β°C to +175 Β°C (TJ, per Infineon OptiMOS 6 family) |
| Package | PG-HSOF-5-4 (7x8 mmΒ²) | PG-TDSON-8-34 (5x6 mm leadless) |
| Mounting Type | Surface Mount | Surface Mount |
| Channel Type | N-Channel | β |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| MSL Level | [DATA_NEEDED: MSL moisture sensitivity level] | 1 (per JEDEC J-STD-020, per Infineon TDSON family) |
| RoHS Status | Compliant | Compliant |
| Total Gate Charge (Q_g) | [DATA_NEEDED: Q_g typical at V_GS=10V] | β |
| Output Capacitance (C_oss) | [DATA_NEEDED: C_oss typical] | β |
| Thermal Resistance (R_thJC) | [DATA_NEEDED: junction-to-case thermal resistance] | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | β | 40 V |
| Continuous Drain Current (Id, Tc) | β | 150 A |
| Power Dissipation (Pd, Tc) | β | 150 W |
| RDS(on) at VGS=10V (typ) | β | 1.0 mΞ© |
| RDS(on) at VGS=10V (max per LCSC excerpt) | β | 1.03 mΞ© |
| Gate-Source Threshold (VGS(th), typ) | β | 3 V (at 90 Β΅A) |
| Gate Drive Recommendation | β | 10 V VGS for full RDS(on) spec |
| Polarity | β | Single N-channel |