IAUA220N08S5N021AUMA1 vs IAUC120N04S6N010ATMA1 Comparaison
Comparaison détaillée côte à côte de IAUA220N08S5N021AUMA1 par Infineon et IAUC120N04S6N010ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IAUA220N08S5N021AUMA1 - 80V, 220A OptiMOS-5 N-MOSFET | Infineon
IAUA220N08S5N021AUMA1 ✓ ActifInfineon
IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon
IAUC120N04S6N010ATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IAUA220N08S5N021AUMA1 | IAUC120N04S6N010ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $2,45 | $0,68 |
| Technology | OptiMOS-5 (75V-120V family) | OptiMOS 6 |
| Drain-Source Voltage (V_DS max) | 80 V | — |
| Continuous Drain Current (I_D, Tj) | 220 A | — |
| Static Drain-Source On-Resistance (R_DS(on)) | 2.1 mΩ at 10 V V_GS | — |
| Power Dissipation (P_D, Tc) | 211 W | — |
| Gate-Source Voltage (V_GS max) | [DATA_NEEDED: V_GS max absolute rating] | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical/min/max] | — |
| Plage de température de fonctionnement | -55C to +175C (Tj) | -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family) |
| Boîtier | PG-HSOF-5-4 (7x8 mm²) | PG-TDSON-8-34 (5x6 mm leadless) |
| Type de montage | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| Niveau MSL | [DATA_NEEDED: MSL moisture sensitivity level] | 1 (per JEDEC J-STD-020, per Infineon TDSON family) |
| Statut RoHS | Compliant | Compliant |
| Total Gate Charge (Q_g) | [DATA_NEEDED: Q_g typical at V_GS=10V] | — |
| Output Capacitance (C_oss) | [DATA_NEEDED: C_oss typical] | — |
| Thermal Resistance (R_thJC) | [DATA_NEEDED: junction-to-case thermal resistance] | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | — | 40 V |
| Continuous Drain Current (Id, Tc) | — | 150 A |
| Power Dissipation (Pd, Tc) | — | 150 W |
| RDS(on) at VGS=10V (typ) | — | 1.0 mΩ |
| RDS(on) at VGS=10V (max per LCSC excerpt) | — | 1.03 mΩ |
| Gate-Source Threshold (VGS(th), typ) | — | 3 V (at 90 µA) |
| Gate Drive Recommendation | — | 10 V VGS for full RDS(on) spec |
| Polarity | — | Single N-channel |