IAUA220N08S5N021AUMA1 vs IAUC120N04S6N010ATMA1 Comparación
Comparación detallada lado a lado de IAUA220N08S5N021AUMA1 por Infineon y IAUC120N04S6N010ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUA220N08S5N021AUMA1 - 80V, 220A OptiMOS-5 N-MOSFET | Infineon
IAUA220N08S5N021AUMA1 ✓ ActivoInfineon
IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon
IAUC120N04S6N010ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUA220N08S5N021AUMA1 | IAUC120N04S6N010ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,45 | $0,68 |
| Technology | OptiMOS-5 (75V-120V family) | OptiMOS 6 |
| Drain-Source Voltage (V_DS max) | 80 V | — |
| Continuous Drain Current (I_D, Tj) | 220 A | — |
| Static Drain-Source On-Resistance (R_DS(on)) | 2.1 mΩ at 10 V V_GS | — |
| Power Dissipation (P_D, Tc) | 211 W | — |
| Gate-Source Voltage (V_GS max) | [DATA_NEEDED: V_GS max absolute rating] | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical/min/max] | — |
| Rango de temperatura de funcionamiento | -55C to +175C (Tj) | -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family) |
| Encapsulado | PG-HSOF-5-4 (7x8 mm²) | PG-TDSON-8-34 (5x6 mm leadless) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| Nivel MSL | [DATA_NEEDED: MSL moisture sensitivity level] | 1 (per JEDEC J-STD-020, per Infineon TDSON family) |
| Estado RoHS | Compliant | Compliant |
| Total Gate Charge (Q_g) | [DATA_NEEDED: Q_g typical at V_GS=10V] | — |
| Output Capacitance (C_oss) | [DATA_NEEDED: C_oss typical] | — |
| Thermal Resistance (R_thJC) | [DATA_NEEDED: junction-to-case thermal resistance] | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | — | 40 V |
| Continuous Drain Current (Id, Tc) | — | 150 A |
| Power Dissipation (Pd, Tc) | — | 150 W |
| RDS(on) at VGS=10V (typ) | — | 1.0 mΩ |
| RDS(on) at VGS=10V (max per LCSC excerpt) | — | 1.03 mΩ |
| Gate-Source Threshold (VGS(th), typ) | — | 3 V (at 90 µA) |
| Gate Drive Recommendation | — | 10 V VGS for full RDS(on) spec |
| Polarity | — | Single N-channel |