IAUC100N04S6L014ATMA1 vs IAUC100N04S6L025ATMA1 Comparison
Detailed side-by-side comparison of IAUC100N04S6L014ATMA1 by Infineon and IAUC100N04S6L025ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC100N04S6L014ATMA1
IAUC100N04S6L014ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6L014ATMA1 β ActiveInfineon
IAUC100N04S6L025ATMA1
IAUC100N04S6L025ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon
IAUC100N04S6L025ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC100N04S6L014ATMA1 | IAUC100N04S6L025ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.72 | $0.62 |
| Manufacturer | Infineon Technologies | β |
| Part Family | IAUC / OptiMOS 6 40V | β |
| Transistor Type | N-Channel MOSFET | β |
| Mode | Enhancement | β |
| Drain-Source Voltage (V_DS) | 40 V | β |
| Continuous Drain Current (I_D, Tc) | 100 A | β |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | β |
| R_DS(on) max (V_GS=10V) | 1.4 mOhm | β |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | β |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | β |
| Total Gate Charge (Q_G) | [DATA_NEEDED: Q_G typical] | β |
| Power Dissipation (P_D, Tc) | 100 W | β |
| Operating Temperature Range | -55C to +175C | β |
| Package | PG-TDSON-8 (SuperSO8, 5x6 mm) | PG-TDSON-8 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| AEC-Q101 Qualification | Yes | β |
| Technology | OptiMOS 6 | OptiMOS 6 40V trench MOSFET |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| Packaging | Tape & Reel (ATMA1 suffix) | β |
| Polarity | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| Continuous Drain Current (ID) at TC=100C | β | [DATA_NEEDED: ID at TC=100C] |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM pulse rating] |
| On-State Resistance RDS(on) max at VGS=10V | β | 2.5 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg total] |
| Power Dissipation (PD) at TC=25C | β | 62 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| Automotive Qualification | β | AEC-Q101 qualified |
| Lead-Free | β | Yes |