IAUC100N04S6L014ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
MPN: IAUC100N04S6L014ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.45 | $1.45 |
| 10 | $1.28 | $12.80 |
| 100 | $1.05 | $105.00 |
| 500 | $0.92 | $460.00 |
| 1,000 | $0.81 | $810.00 |
| 5,000 | $0.72 | $3,600.00 |
Drop-in alternatives for IAUC100N04S6L014ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IAUC120N04S6L012ATMA1
✅ Drop-In✓ In Stock
$1.21 / Unit
View Datasheet →IAUC100N04S6L025ATMA1
✅ Drop-In✓ In Stock
$0.62 / Unit
View Datasheet →IAUC60N04S6N031HATMA1
✅ Drop-In✓ In Stock
$0.95 / Unit
View Datasheet →IAUT300N08S5N011ATMA1
✅ Drop-In✓ In Stock
$5.4 / Unit
View Datasheet →NVMFS5C430N
✅ Drop-In📋 Reference alternative (not in catalog)
IAUC100N04S6L014ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Family | IAUC / OptiMOS 6 40V |
| Transistor Type | N-Channel MOSFET |
| Mode | Enhancement |
| Drain-Source Voltage (V_DS) | 40 V |
| Continuous Drain Current (I_D, Tc) | 100 A |
| R_DS(on) max (V_GS=10V) | 1.4 mOhm |
| Power Dissipation (P_D, Tc) | 100 W |
| Operating Temperature Range | -55C to +175C |
| Package | PG-TDSON-8 (SuperSO8, 5x6 mm) |
| Mounting Type | Surface Mount |
| AEC-Q101 Qualification | Yes |
| Technology | OptiMOS 6 |
| RoHS Status | Compliant |
| MSL Level | 1 |
| Packaging | Tape & Reel (ATMA1 suffix) |
IAUC100N04S6L014ATMA1 Pin Configuration
| Pin 1 | S — Source |
| Pin 2 | S — Source |
| Pin 3 | S — Source |
| Pin 4 | G — Gate |
| Pin 5 | S — Source |
| Pin 6 | S — Source |
| Pin 7 | S — Source |
| Pin 8 | S — Source |
| Pin EP | D — Drain (exposed pad) |
Safe Operating Area (DC)
Typical Applications
IAUC100N04S6L014ATMA1 is suitable for 6 applications: 12V Automotive ECU Power Switching, Electric Power Steering (EPS) Motor Drive, 48V-to-12V DC-DC Buck Converter High-Side Switch, Battery Management System (BMS) Protection Switch, Brake-by-Wire and Chassis Control Loads, Industrial 24V Bus Switching.
12V Automotive ECU Power Switching
The IAUC100N04S6L014ATMA1 is well suited to high-side or low-side power switching in 12 V automotive ECUs. Its 1.4 mOhm R_DS(on) at V_GS=10 V minimises conduction loss, and the 100 A continuous drain rating covers demanding loads such as fuel injectors, solenoid drivers, and PTC heater stages. AEC-Q101 qualification plus the 40 V V_DS rating provides the headroom needed for cold-crank and load-dump transients in 12 V vehicle electrical systems. The PG-TDSON-8 footprint is shared with many 12 V automotive loads, simplifying PCB reuse across ECU variants. Compared with a 60 V part, the 40 V rating is the cost-optimised sweet spot for 12 V systems.
Recommended
Electric Power Steering (EPS) Motor Drive
EPS systems demand a 40 V MOSFET with low R_DS(on) to deliver high peak torque currents efficiently while keeping board temperature in check. The IAUC100N04S6L014ATMA1's 1.4 mOhm on-resistance and 100 A continuous rating support the half-bridge switches around a 12 V EPS motor, where transient currents can reach 80 A. The exposed drain pad of the SuperSO8 5x6 mm package spreads heat to the PCB copper pour, allowing sustained operation without external heatsinks. OptiMOS 6 switching losses are also low enough for PWM frequencies in the 20-50 kHz range typical of EPS current loops. AEC-Q101 qualification matches the automotive safety requirement.
Recommended
48V-to-12V DC-DC Buck Converter High-Side Switch
In 12 V output rails of a 48 V mild-hybrid bus, the 40 V rating of the IAUC100N04S6L014ATMA1 is too low for direct use on the 48 V primary side; however, on the secondary (12 V) synchronous-rectifier side of a buck or on a downstream 12 V high-side switch, it is a strong choice. The 1.4 mOhm R_DS(on) keeps rectifier conduction loss minimal at 50-100 A loads, and OptiMOS 6 gate charge allows switching at 200-500 kHz to shrink magnetics. AEC-Q101 plus the 5x6 mm SuperSO8 footprint is well aligned with 48 V mild-hybrid power-module layouts. The exposed pad carries heat directly into the module baseplate.
Recommended
Battery Management System (BMS) Protection Switch
The IAUC100N04S6L014ATMA1 is suitable for use as the high-side or low-side protection switch in 12 V lithium-ion battery management systems, where it must carry full load current and interrupt fault currents in microseconds. With 1.4 mOhm on-resistance and 100 A continuous current, it adds minimal voltage drop in the power path, preserving usable battery capacity. The 40 V V_DS rating covers 12 V systems with inductive load transients, and AEC-Q101 supports automotive BMS applications. The SuperSO8 5x6 mm package allows dense PCB layouts typical of pack-level BMS boards.
Recommended
Brake-by-Wire and Chassis Control Loads
Brake-by-wire and active-chassis systems use high-current 12 V actuators and need AEC-Q101 MOSFETs with very low on-resistance to maintain precise control. The IAUC100N04S6L014ATMA1's 1.4 mOhm R_DS(on) and 100 A rating handle the solenoid and motor drive currents typical of brake modulators and active dampers, while the 40 V V_DS absorbs the back-EMF of inductive loads. The OptiMOS 6 process gives fast switching for the PWM control loops used in chassis control. The PG-TDSON-8 5x6 mm footprint is shared with chassis-domain 12 V switch ICs, allowing PCB consolidation.
Recommended
Industrial 24V Bus Switching
The 40 V V_DS rating of the IAUC100N04S6L014ATMA1 also covers many industrial 24 V bus-switching applications, particularly when paired with adequate TVS protection on transient-prone lines. Its 1.4 mOhm on-resistance minimises steady-state loss in high-current relay-replacement circuits, while the 100 A continuous drain rating supports multi-kilowatt load blocks. The SuperSO8 5x6 mm package is industry-standard for industrial 24 V power boards, simplifying the BOM. For higher-voltage buses (48 V, 60 V), a V_DS upgrade is required; for 12 V, this part is over-spec only in the voltage headroom.
Recommended
Recommended Products Summary
Engineering reference data for IAUC100N04S6L014ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUC120N04S6L012ATMA1 | IAUC100N04S6L025ATMA1 | IAUC60N04S6N031HATMA1 | IAUT300N08S5N011ATMA1 | NVMFS5C430N |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi |
| Package | PG-TDSON-8 (SuperSO8, 5x6 mm) | PG-TDSON-8 (SuperSO8, 5x6 mm) - same | PG-TDSON-8 (SuperSO8, 5x6 mm) - same | PG-TDSON-8 (SuperSO8, 5x6 mm) - same | PG-TDSON-8 (SuperSO8, 5x6 mm) - same | DFN-5 (5x6 mm) - same |
| V_DS max (V) | 40 | 40 | 40 | 40 | 80 | 40 |
| Continuous I_D (A, Tc) | 100 | 120 | 100 | 60 | 300 | [DATA_NEEDED] |
| R_DS(on) max (mOhm, V_GS=10V) | 1.4 | 1.2 | 2.5 | 3.1 | 1.1 | 4.3 |
| Technology | OptiMOS 6 | OptiMOS 6 | OptiMOS 6 | OptiMOS 6 | OptiMOS 5 | onsemi Trench |
| AEC-Q101 | Yes | Yes | Yes | Yes | Yes | Yes |
| P_D max (W, Tc) | 100 | 100 | 100 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Lowest R_DS(on) in the IAUC 100A 40V family (vs IAUC100N04S6L025ATMA1)
- Optimised for 12V automotive systems vs 80V mild-hybrid (vs IAUT300N08S5N011ATMA1)
- OptiMOS 6 latest-generation process (vs NVMFS5C430N (onsemi))
Design Notes
Estimated: at I_D = 50 A and R_DS(on) = 1.7 mOhm (typical at 100C junction), conduction loss is approximately 4.25 W per switch, with a SuperSO8 5x6 mm theta_JA of about 50 C/W on a 1 sq-in copper pour giving a 213C junction temperature rise above 25C ambient. Ensure the PCB copper area is sized so that the steady-state junction temperature stays below 150C for AEC-Q100/Q101 margin. Use thermal vias under the exposed pad to spread heat to inner layers.
Place the gate drive loop area as small as possible: keep the gate resistor within 5 mm of the gate pin and use a ground-return path that does not share the source-sense trace. The high dv/dt of the drain can capacitively couple into the gate loop; adding a 10 kOhm gate-source pull-down resistor keeps the MOSFET off during controller start-up. The exposed drain pad must be soldered to a copper pour of at least 1 sq inch for the rated thermal performance.
Do not operate the IAUC100N04S6L014ATMA1 above 40 V V_DS, even transiently - the 40 V rating has limited avalanche headroom. Add a TVS diode or RC snubber if the application has inductive kick (solenoids, motors). For V_GS drive, use 10 V for full enhancement; at 4.5 V the on-resistance can more than double, causing severe conduction loss. Avoid body-diode-only commutation in synchronous-rectifier service if switching frequency exceeds 100 kHz - the reverse-recovery charge can cause shoot-through.
The PG-TDSON-8 5x6 mm land pattern is JEDEC-standard; follow IPC-7351 SuperSO8 guidelines for solder paste and mask. Use a 0.2 mm solder paste deposit on the exposed pad and 0.1 mm on the source leads to balance thermal via-in-pad soldering. For AEC-Q101 reliability, control the voiding under the exposed pad below 25% of the pad area - excessive voids increase thermal resistance and accelerate power-cycle fatigue.
Compliance Information
AEC-Q101 qualified (discrete semiconductor automotive stress standard). RoHS and REACH compliant per Infineon product page. Lead-free reflow profile per JEDEC J-STD-020.
