IAUC100N04S6L025ATMA1 vs IAUC28N08S5L230ATMA1 Comparison
Detailed side-by-side comparison of IAUC100N04S6L025ATMA1 by Infineon and IAUC28N08S5L230ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC100N04S6L025ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon
IAUC100N04S6L025ATMA1 β ActiveInfineon
IAUC28N08S5L230ATMA1 - 80V 28A 23mΞ© OptiMOS-5 N-Channel MOSFET | Infineon
IAUC28N08S5L230ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC100N04S6L025ATMA1 | IAUC28N08S5L230ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.62 | $0.71 |
| Technology | OptiMOS 6 40V trench MOSFET | OptiMOS-5 Power MOSFET |
| Polarity | N-Channel | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulse rating] | β |
| On-State Resistance RDS(on) max at VGS=10V | 2.5 mOhm | β |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | β |
| Power Dissipation (PD) at TC=25C | 62 W | β |
| Operating Junction Temperature | -55 C to +175 C | -55 Β°C to +175 Β°C |
| Package | PG-TDSON-8 (SuperSO8 5x6 mm) | PG-TDSON-8-33 (5x6 mm SSO8) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | β |
| MSL Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS-5 |
| FET Type | β | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | β | 80 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>) | β | 28 A |
| Pulsed Drain Current (I<sub>DM</sub>) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | β | 23 mΞ© (typ) |
| Gate-Source Threshold (V<sub>GS(th)</sub>, typ) | β | 2.5 V |
| Gate Charge (Q<sub>g</sub>, typ) | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) | β | 38 W |
| Automotive Qualified | β | Yes (AEC-Q101) |